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Title: Towards All-Inorganic Transport Layers for Wide-Band-Gap Formamidinium Lead Bromide-Based Planar Photovoltaics

Abstract

Abstract Hybrid perovskite photovoltaic devices heavily rely on the use of organic (rather than inorganic) charge‐transport layers on top of a perovskite absorber layer because of difficulties in depositing inorganic materials on top of these fragile absorber layers. However, in comparison to the unstable and expensive organic transport materials, inorganic charge‐transport layers provide improved charge transport and stability to the device architecture. Here, we report photovoltaic devices using all‐inorganic transport layers in a planar p‐i‐n junction device configuration using formamidinium lead tribromide (FAPbBr 3 ) as an absorber. Efficient planar devices are obtained through atomic layer deposition of nickel oxide and sputtered zinc oxide as hole‐ and electron‐transport materials, respectively. Using only inorganic charge‐transport layers resulted in planar FAPbBr 3 devices with a power conversion efficiency of 6.75 % at an open‐circuit voltage of 1.23 V. The transition of planar FAPbBr 3 devices making from all‐organic towards all–inorganic charge‐transport layers is studied in detail.

Authors:
 [1];  [1];  [1];  [2];  [1]
+ Show Author Affiliations
  1. Indian Institute of Technology Bombay, Mumbai (India)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1395106
Alternate Identifier(s):
OSTI ID: 1378391
Report Number(s):
NREL/JA-5K00-70190
Journal ID: ISSN 2194-4288
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Energy Technology
Additional Journal Information:
Journal Volume: 5; Journal Issue: 10; Journal ID: ISSN 2194-4288
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; atomic layer deposition; inorganic transport layer; nickel oxide; perovskite solar cells; wide band gap

Citation Formats

Subbiah, Anand S., Mahuli, Neha, Agarwal, Sumanshu, van Hest, Maikel F. A. M., and Sarkar, Shaibal K. Towards All-Inorganic Transport Layers for Wide-Band-Gap Formamidinium Lead Bromide-Based Planar Photovoltaics. United States: N. p., 2017. Web. doi:10.1002/ente.201700361.
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Subbiah, Anand S., Mahuli, Neha, Agarwal, Sumanshu, van Hest, Maikel F. A. M., & Sarkar, Shaibal K. Towards All-Inorganic Transport Layers for Wide-Band-Gap Formamidinium Lead Bromide-Based Planar Photovoltaics. United States. https://doi.org/10.1002/ente.201700361
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Subbiah, Anand S., Mahuli, Neha, Agarwal, Sumanshu, van Hest, Maikel F. A. M., and Sarkar, Shaibal K. Fri . "Towards All-Inorganic Transport Layers for Wide-Band-Gap Formamidinium Lead Bromide-Based Planar Photovoltaics". United States. https://doi.org/10.1002/ente.201700361. https://www.osti.gov/servlets/purl/1395106.
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@article{osti_1395106,
title = {Towards All-Inorganic Transport Layers for Wide-Band-Gap Formamidinium Lead Bromide-Based Planar Photovoltaics},
author = {Subbiah, Anand S. and Mahuli, Neha and Agarwal, Sumanshu and van Hest, Maikel F. A. M. and Sarkar, Shaibal K.},
abstractNote = {Abstract Hybrid perovskite photovoltaic devices heavily rely on the use of organic (rather than inorganic) charge‐transport layers on top of a perovskite absorber layer because of difficulties in depositing inorganic materials on top of these fragile absorber layers. However, in comparison to the unstable and expensive organic transport materials, inorganic charge‐transport layers provide improved charge transport and stability to the device architecture. Here, we report photovoltaic devices using all‐inorganic transport layers in a planar p‐i‐n junction device configuration using formamidinium lead tribromide (FAPbBr 3 ) as an absorber. Efficient planar devices are obtained through atomic layer deposition of nickel oxide and sputtered zinc oxide as hole‐ and electron‐transport materials, respectively. Using only inorganic charge‐transport layers resulted in planar FAPbBr 3 devices with a power conversion efficiency of 6.75 % at an open‐circuit voltage of 1.23 V. The transition of planar FAPbBr 3 devices making from all‐organic towards all–inorganic charge‐transport layers is studied in detail.},
doi = {10.1002/ente.201700361},
journal = {Energy Technology},
number = 10,
volume = 5,
place = {United States},
year = {Fri Jul 21 00:00:00 EDT 2017},
month = {Fri Jul 21 00:00:00 EDT 2017}
}
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https://doi.org/10.1002/ente.201700361
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