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This content will become publicly available on September 1, 2018

Title: Probing the Unique Role of Gallium in Amorphous Oxide Semiconductors through Structure-Property Relationships

Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1] ;  [3] ; ORCiD logo [4] ;  [5]
  1. Department of Materials Science and Engineeringand, the Materials Research Center, Northwestern University, Evanston IL 60208 USA
  2. DND-CAT, Northwestern Synchrotron Research Center at the Advanced Photon Source, Argonne IL 60439 USA
  3. Physics Department, Missouri University of Science & Technology, Rolla MO 65409 USA
  4. Department of Materials Science and Engineeringand, the Materials Research Center, Northwestern University, Evanston IL 60208 USA, Department of Chemistry, Northwestern University, Evanston IL 60208 USA
  5. Department of Materials Science and Engineeringand, the Materials Research Center, Northwestern University, Evanston IL 60208 USA, Department of Physics and Astronomy, Northwestern University, Evanston IL 60208 USA
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 10; Related Information: CHORUS Timestamp: 2017-10-09 04:12:53; Journal ID: ISSN 2199-160X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1378111