Interface Control of Ferroelectricity in an SrRuO3/BaTiO3/SrRuO3 Capacitor and its Critical Thickness
Abstract
The atomic‐scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. In this study, it is demonstrated that the oxygen pressure during growth plays an important role in controlling the interfacial terminations of SrRuO 3 /BaTiO 3 /SrRuO 3 (SRO/BTO/SRO) ferroelectric (FE) capacitors. The SRO/BTO/SRO heterostructures are grown by a pulsed laser deposition method. The top SRO/BTO interface, grown at high (around 150 mTorr), usually exhibits a mixture of RuO 2 –BaO and SrO–TiO 2 terminations. By reducing , the authors obtain atomically sharp SRO/BTO top interfaces with uniform SrO–TiO 2 termination. Using capacitor devices with symmetric and uniform interfacial termination, it is demonstrated for the first time that the FE critical thickness can reach the theoretical limit of 3.5 unit cells.
- Authors:
-
- Institute for Basic Science (IBS), Seoul, (Republic of Korea); Seoul National Univ., Seoul (Republic of Korea)
- Seoul National Univ., Seoul (Republic of Korea)
- Indian Institute of Technology Madras, Chennai (India)
- Sookmyung Women's Univ., Seoul (Republic of Korea)
- Univ. of Suwon, Gyunggi-do (Republic of Korea)
- Soongsil Univ., Seoul (Republic of Korea)
- Argonne National Lab. (ANL), Lemont, IL (United States)
- Pukyong National Univ., Busan (Republic of Korea)
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1377858
- Alternate Identifier(s):
- OSTI ID: 1401280
- Grant/Contract Number:
- AC02-06CH11357; DE‐AC02‐06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Volume: 29; Journal Issue: 19; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; BaTiO3; ferroelectric critical thickness; ferroelectricity; interface engineering
Citation Formats
Shin, Yeong Jae, Kim, Yoonkoo, Kang, Sung -Jin, Nahm, Ho -Hyun, Murugavel, Pattukkannu, Kim, Jeong Rae, Cho, Myung Rae, Wang, Lingfei, Yang, Sang Mo, Yoon, Jong -Gul, Chung, Jin -Seok, Kim, Miyoung, Zhou, Hua, Chang, Seo Hyoung, and Noh, Tae Won. Interface Control of Ferroelectricity in an SrRuO3/BaTiO3/SrRuO3 Capacitor and its Critical Thickness. United States: N. p., 2017.
Web. doi:10.1002/adma.201602795.
Shin, Yeong Jae, Kim, Yoonkoo, Kang, Sung -Jin, Nahm, Ho -Hyun, Murugavel, Pattukkannu, Kim, Jeong Rae, Cho, Myung Rae, Wang, Lingfei, Yang, Sang Mo, Yoon, Jong -Gul, Chung, Jin -Seok, Kim, Miyoung, Zhou, Hua, Chang, Seo Hyoung, & Noh, Tae Won. Interface Control of Ferroelectricity in an SrRuO3/BaTiO3/SrRuO3 Capacitor and its Critical Thickness. United States. https://doi.org/10.1002/adma.201602795
Shin, Yeong Jae, Kim, Yoonkoo, Kang, Sung -Jin, Nahm, Ho -Hyun, Murugavel, Pattukkannu, Kim, Jeong Rae, Cho, Myung Rae, Wang, Lingfei, Yang, Sang Mo, Yoon, Jong -Gul, Chung, Jin -Seok, Kim, Miyoung, Zhou, Hua, Chang, Seo Hyoung, and Noh, Tae Won. Fri .
"Interface Control of Ferroelectricity in an SrRuO3/BaTiO3/SrRuO3 Capacitor and its Critical Thickness". United States. https://doi.org/10.1002/adma.201602795. https://www.osti.gov/servlets/purl/1377858.
@article{osti_1377858,
title = {Interface Control of Ferroelectricity in an SrRuO3/BaTiO3/SrRuO3 Capacitor and its Critical Thickness},
author = {Shin, Yeong Jae and Kim, Yoonkoo and Kang, Sung -Jin and Nahm, Ho -Hyun and Murugavel, Pattukkannu and Kim, Jeong Rae and Cho, Myung Rae and Wang, Lingfei and Yang, Sang Mo and Yoon, Jong -Gul and Chung, Jin -Seok and Kim, Miyoung and Zhou, Hua and Chang, Seo Hyoung and Noh, Tae Won},
abstractNote = {The atomic‐scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. In this study, it is demonstrated that the oxygen pressure during growth plays an important role in controlling the interfacial terminations of SrRuO 3 /BaTiO 3 /SrRuO 3 (SRO/BTO/SRO) ferroelectric (FE) capacitors. The SRO/BTO/SRO heterostructures are grown by a pulsed laser deposition method. The top SRO/BTO interface, grown at high (around 150 mTorr), usually exhibits a mixture of RuO 2 –BaO and SrO–TiO 2 terminations. By reducing , the authors obtain atomically sharp SRO/BTO top interfaces with uniform SrO–TiO 2 termination. Using capacitor devices with symmetric and uniform interfacial termination, it is demonstrated for the first time that the FE critical thickness can reach the theoretical limit of 3.5 unit cells.},
doi = {10.1002/adma.201602795},
journal = {Advanced Materials},
number = 19,
volume = 29,
place = {United States},
year = {Fri Mar 03 00:00:00 EST 2017},
month = {Fri Mar 03 00:00:00 EST 2017}
}
Web of Science
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