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Title: Interface Control of Ferroelectricity in an SrRuO 3/BaTiO 3/SrRuO 3 Capacitor and its Critical Thickness

Here, the atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. In this study, it is demonstrated that the oxygen pressure (P O2) during growth plays an important role in controlling the interfacial terminations of SrRuO 3/BaTiO 3/SrRuO 3 (SRO/BTO/SRO) ferroelectric (FE) capacitors. The SRO/BTO/SRO heterostructures are grown by a pulsed laser deposition method. The top SRO/BTO interface, grown at high P O2 (around 150 mTorr), usually exhibits a mixture of RuO 2-BaO and SrO-TiO 2 terminations. By reducing P O2, the authors obtain atomically sharp SRO/BTO top interfaces with uniform SrO-TiO 2 termination. Using capacitor devices with symmetric and uniform interfacial termination, it is demonstrated for the first time that the FE critical thickness can reach the theoretical limit of 3.5 unit cells.
Authors:
 [1] ;  [2] ;  [1] ;  [1] ;  [3] ;  [1] ;  [1] ;  [1] ;  [4] ;  [5] ;  [6] ;  [2] ;  [7] ;  [8] ;  [1]
  1. Institute for Basic Science (IBS), Seoul, (Republic of Korea); Seoul National Univ., Seoul (Republic of Korea)
  2. Seoul National Univ., Seoul (Republic of Korea)
  3. Indian Institute of Technology Madras, Chennai (India)
  4. Sookmyung Women's Univ., Seoul (Republic of Korea)
  5. Univ. of Suwon, Gyunggi-do (Republic of Korea)
  6. Soongsil Univ., Seoul (Republic of Korea)
  7. Argonne National Lab. (ANL), Lemont, IL (United States)
  8. Pukyong National Univ., Busan (Republic of Korea)
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 19; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BaTiO3; ferroelectric critical thickness; ferroelectricity; interface engineering
OSTI Identifier:
1377858
Alternate Identifier(s):
OSTI ID: 1401280

Shin, Yeong Jae, Kim, Yoonkoo, Kang, Sung -Jin, Nahm, Ho -Hyun, Murugavel, Pattukkannu, Kim, Jeong Rae, Cho, Myung Rae, Wang, Lingfei, Yang, Sang Mo, Yoon, Jong -Gul, Chung, Jin -Seok, Kim, Miyoung, Zhou, Hua, Chang, Seo Hyoung, and Noh, Tae Won. Interface Control of Ferroelectricity in an SrRuO3/BaTiO3/SrRuO3 Capacitor and its Critical Thickness. United States: N. p., Web. doi:10.1002/adma.201602795.
Shin, Yeong Jae, Kim, Yoonkoo, Kang, Sung -Jin, Nahm, Ho -Hyun, Murugavel, Pattukkannu, Kim, Jeong Rae, Cho, Myung Rae, Wang, Lingfei, Yang, Sang Mo, Yoon, Jong -Gul, Chung, Jin -Seok, Kim, Miyoung, Zhou, Hua, Chang, Seo Hyoung, & Noh, Tae Won. Interface Control of Ferroelectricity in an SrRuO3/BaTiO3/SrRuO3 Capacitor and its Critical Thickness. United States. doi:10.1002/adma.201602795.
Shin, Yeong Jae, Kim, Yoonkoo, Kang, Sung -Jin, Nahm, Ho -Hyun, Murugavel, Pattukkannu, Kim, Jeong Rae, Cho, Myung Rae, Wang, Lingfei, Yang, Sang Mo, Yoon, Jong -Gul, Chung, Jin -Seok, Kim, Miyoung, Zhou, Hua, Chang, Seo Hyoung, and Noh, Tae Won. 2017. "Interface Control of Ferroelectricity in an SrRuO3/BaTiO3/SrRuO3 Capacitor and its Critical Thickness". United States. doi:10.1002/adma.201602795. https://www.osti.gov/servlets/purl/1377858.
@article{osti_1377858,
title = {Interface Control of Ferroelectricity in an SrRuO3/BaTiO3/SrRuO3 Capacitor and its Critical Thickness},
author = {Shin, Yeong Jae and Kim, Yoonkoo and Kang, Sung -Jin and Nahm, Ho -Hyun and Murugavel, Pattukkannu and Kim, Jeong Rae and Cho, Myung Rae and Wang, Lingfei and Yang, Sang Mo and Yoon, Jong -Gul and Chung, Jin -Seok and Kim, Miyoung and Zhou, Hua and Chang, Seo Hyoung and Noh, Tae Won},
abstractNote = {Here, the atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. In this study, it is demonstrated that the oxygen pressure (PO2) during growth plays an important role in controlling the interfacial terminations of SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) ferroelectric (FE) capacitors. The SRO/BTO/SRO heterostructures are grown by a pulsed laser deposition method. The top SRO/BTO interface, grown at high PO2 (around 150 mTorr), usually exhibits a mixture of RuO2-BaO and SrO-TiO2 terminations. By reducing PO2, the authors obtain atomically sharp SRO/BTO top interfaces with uniform SrO-TiO2 termination. Using capacitor devices with symmetric and uniform interfacial termination, it is demonstrated for the first time that the FE critical thickness can reach the theoretical limit of 3.5 unit cells.},
doi = {10.1002/adma.201602795},
journal = {Advanced Materials},
number = 19,
volume = 29,
place = {United States},
year = {2017},
month = {3}
}

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