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Title: Interface Control of Ferroelectricity in an SrRuO 3/BaTiO 3/SrRuO 3 Capacitor and its Critical Thickness

Here, the atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. In this study, it is demonstrated that the oxygen pressure (P O2) during growth plays an important role in controlling the interfacial terminations of SrRuO 3/BaTiO 3/SrRuO 3 (SRO/BTO/SRO) ferroelectric (FE) capacitors. The SRO/BTO/SRO heterostructures are grown by a pulsed laser deposition method. The top SRO/BTO interface, grown at high P O2 (around 150 mTorr), usually exhibits a mixture of RuO 2-BaO and SrO-TiO 2 terminations. By reducing P O2, the authors obtain atomically sharp SRO/BTO top interfaces with uniform SrO-TiO 2 termination. Using capacitor devices with symmetric and uniform interfacial termination, it is demonstrated for the first time that the FE critical thickness can reach the theoretical limit of 3.5 unit cells.
Authors:
 [1] ;  [2] ;  [1] ;  [1] ;  [3] ;  [1] ;  [1] ;  [1] ;  [4] ;  [5] ;  [6] ;  [2] ;  [7] ;  [8] ;  [1]
  1. Institute for Basic Science (IBS), Seoul, (Republic of Korea); Seoul National Univ., Seoul (Republic of Korea)
  2. Seoul National Univ., Seoul (Republic of Korea)
  3. Indian Institute of Technology Madras, Chennai (India)
  4. Sookmyung Women's Univ., Seoul (Republic of Korea)
  5. Univ. of Suwon, Gyunggi-do (Republic of Korea)
  6. Soongsil Univ., Seoul (Republic of Korea)
  7. Argonne National Lab. (ANL), Lemont, IL (United States)
  8. Pukyong National Univ., Busan (Republic of Korea)
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 19; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BaTiO3; ferroelectric critical thickness; ferroelectricity; interface engineering
OSTI Identifier:
1377858
Alternate Identifier(s):
OSTI ID: 1401280