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Title: Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires

The In-doped SnTe nanowire surface is composed of In 2O 3, SnO 2, Te and TeO 2 which can be readily removed by argon ion sputtering.
Authors:
ORCiD logo [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [3] ;  [2] ; ORCiD logo [2] ;  [4] ; ORCiD logo [1]
  1. Indiana Univ., Bloomington, IN (United States)
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  4. Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Univ. at Buffalo - The State Univ. of New York, Buffalo, NY (United States)
Publication Date:
Report Number(s):
SAND-2017-9019J; LA-UR-17-27136
Journal ID: ISSN 2040-3364; NANOHL; 656453
Grant/Contract Number:
AC04-94AL85000; AC52-06NA25396
Type:
Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 9; Journal Issue: 35; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; Material Science
OSTI Identifier:
1377605
Alternate Identifier(s):
OSTI ID: 1407898