skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: AC stress and electronic effects on SET switching of HfO 2 RRAM

Authors:
 [1];  [2];  [2];  [2];  [2];  [3]
  1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
  2. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
  3. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1377089
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 9; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Liu, Jen-Chieh, Magyari-Köpe, Blanka, Qin, Shengjun, Zheng, Xin, Philip Wong, H. -S., and Hou, Tuo-Hung. AC stress and electronic effects on SET switching of HfO 2 RRAM. United States: N. p., 2017. Web. doi:10.1063/1.4991576.
Liu, Jen-Chieh, Magyari-Köpe, Blanka, Qin, Shengjun, Zheng, Xin, Philip Wong, H. -S., & Hou, Tuo-Hung. AC stress and electronic effects on SET switching of HfO 2 RRAM. United States. doi:10.1063/1.4991576.
Liu, Jen-Chieh, Magyari-Köpe, Blanka, Qin, Shengjun, Zheng, Xin, Philip Wong, H. -S., and Hou, Tuo-Hung. Mon . "AC stress and electronic effects on SET switching of HfO 2 RRAM". United States. doi:10.1063/1.4991576.
@article{osti_1377089,
title = {AC stress and electronic effects on SET switching of HfO 2 RRAM},
author = {Liu, Jen-Chieh and Magyari-Köpe, Blanka and Qin, Shengjun and Zheng, Xin and Philip Wong, H. -S. and Hou, Tuo-Hung},
abstractNote = {},
doi = {10.1063/1.4991576},
journal = {Applied Physics Letters},
number = 9,
volume = 111,
place = {United States},
year = {2017},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4991576

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
journal, July 2009

  • Waser, Rainer; Dittmann, Regina; Staikov, Georgi
  • Advanced Materials, Vol. 21, Issue 25-26, p. 2632-2663
  • DOI: 10.1002/adma.200900375

Filament-Induced Anisotropic Oxygen Vacancy Diffusion and Charge Trapping Effects in Hafnium Oxide RRAM
journal, April 2016

  • Duncan, Dan; Magyari-Kope, Blanka; Nishi, Yoshio
  • IEEE Electron Device Letters, Vol. 37, Issue 4
  • DOI: 10.1109/LED.2016.2524450

Rapid Prediction of RRAM RESET-State Disturb by Ramped Voltage Stress
journal, April 2012

  • Luo, Wun-Cheng; Lin, Kuan-Liang; Huang, Jiun-Jia
  • IEEE Electron Device Letters, Vol. 33, Issue 4
  • DOI: 10.1109/LED.2012.2185838

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown
journal, August 2013

  • Long, Shibing; Lian, Xiaojuan; Cagli, Carlo
  • IEEE Electron Device Letters, Vol. 34, Issue 8
  • DOI: 10.1109/LED.2013.2266332

Projector augmented-wave method
journal, December 1994


Influence of Frequency Dependent Time to Breakdown on High-K/Metal Gate Reliability
journal, July 2013

  • Knebel, Steve; Kupke, Steve; Schroeder, Uwe
  • IEEE Transactions on Electron Devices, Vol. 60, Issue 7
  • DOI: 10.1109/TED.2013.2264104

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996


Statistical Model and Rapid Prediction of RRAM SET Speed–Disturb Dilemma
journal, November 2013

  • Luo, Wun-Cheng; Liu, Jen-Chieh; Lin, Yen-Chuan
  • IEEE Transactions on Electron Devices, Vol. 60, Issue 11
  • DOI: 10.1109/TED.2013.2281991

Influence of the exchange screening parameter on the performance of screened hybrid functionals
journal, December 2006

  • Krukau, Aliaksandr V.; Vydrov, Oleg A.; Izmaylov, Artur F.
  • The Journal of Chemical Physics, Vol. 125, Issue 22
  • DOI: 10.1063/1.2404663

Microscopic Modeling of HfO<sub><italic>x</italic></sub> RRAM Operations: From Forming to Switching
journal, June 2015

  • Padovani, Andrea; Larcher, Luca; Pirrotta, Onofrio
  • IEEE Transactions on Electron Devices, Vol. 62, Issue 6
  • DOI: 10.1109/TED.2015.2418114

Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach
journal, October 2013

  • Wu, Ernest Y.; Li, Baozhen; Stathis, James H.
  • Applied Physics Letters, Vol. 103, Issue 15
  • DOI: 10.1063/1.4824035

Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories
journal, April 2013


Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology
journal, April 2012

  • Guan, Ximeng; Yu, Shimeng; Wong, H. -S. Philip
  • IEEE Transactions on Electron Devices, Vol. 59, Issue 4
  • DOI: 10.1109/TED.2012.2184545