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Title: AC stress and electronic effects on SET switching of HfO 2 RRAM

Authors:
 [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [3]
  1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
  2. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
  3. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 9; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1377089