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Title: Enhancing the barrier height in oxide Schottky junctions using interface dipoles

Authors:
 [1];  [2];  [1]
  1. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
  2. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA, Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1377088
Grant/Contract Number:  
AC02-76SF00515
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 9; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Tachikawa, Takashi, Hwang, Harold Y., and Hikita, Yasuyuki. Enhancing the barrier height in oxide Schottky junctions using interface dipoles. United States: N. p., 2017. Web. doi:10.1063/1.4991691.
Tachikawa, Takashi, Hwang, Harold Y., & Hikita, Yasuyuki. Enhancing the barrier height in oxide Schottky junctions using interface dipoles. United States. doi:10.1063/1.4991691.
Tachikawa, Takashi, Hwang, Harold Y., and Hikita, Yasuyuki. Mon . "Enhancing the barrier height in oxide Schottky junctions using interface dipoles". United States. doi:10.1063/1.4991691.
@article{osti_1377088,
title = {Enhancing the barrier height in oxide Schottky junctions using interface dipoles},
author = {Tachikawa, Takashi and Hwang, Harold Y. and Hikita, Yasuyuki},
abstractNote = {},
doi = {10.1063/1.4991691},
journal = {Applied Physics Letters},
number = 9,
volume = 111,
place = {United States},
year = {2017},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4991691

Citation Metrics:
Cited by: 2 works
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