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Title: Enhancing the barrier height in oxide Schottky junctions using interface dipoles

Authors:
 [1] ;  [2] ;  [1]
  1. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
  2. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA, Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305, USA
Publication Date:
Grant/Contract Number:
AC02-76SF00515
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 9; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1377088