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Title: High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping

Photo detection of ultraviolet (UV) light remains a challenge since the penetration depth of UV light is limited to the nanometer scale. Therefore, the doping profile and electric field in the top nanometer range of the photo detection devices become critical. Traditional UV photodetectors usually use a constant doping profile near the semiconductor surface, resulting in a negligible electric field, which limits the photo-generated carrier collection efficiency of the photodetector. Here, we demonstrate, via the use of an optimized gradient boron doping technique, that the carrier collection efficiency and photo responsivity under the UV wavelength region have been enhanced. Moreover, the ultrathin p+-i-n junction shows an avalanche gain of 2800 and an ultra-low junction capacitance (sub pico-farad), indicating potential applications in the low timing jitter single photon detection area.
Authors:
 [1] ; ORCiD logo [2] ; ORCiD logo [1] ;  [1] ;  [1] ;  [1] ; ORCiD logo [2] ; ORCiD logo [1] ; ORCiD logo [2] ;  [1] ;  [1] ;  [1] ;  [1] ; ORCiD logo [2] ;  [1] ; ORCiD logo [3] ;  [2] ;  [1]
  1. Univ. of Wisconsin, Madison, WI (United States)
  2. Stanford Univ., Stanford, CA (United States)
  3. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
Report Number(s):
LA-UR-18-21146
Journal ID: ISSN 0003-6951
Grant/Contract Number:
NA0002915; AC52-06NA25396
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Univ. of Wisconsin, Madison, WI (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA), Office of Defense Programs (DP) (NA-10)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 36 MATERIALS SCIENCE; Atomic and Nuclear Physics
OSTI Identifier:
1377062
Alternate Identifier(s):
OSTI ID: 1376762; OSTI ID: 1481993

Xia, Zhenyang, Zang, Kai, Liu, Dong, Zhou, Ming, Kim, Tong -June, Zhang, Huilong, Xue, Muyu, Park, Jeongpil, Morea, Matthew, Ryu, Jae Ha, Chang, Tzu -Hsuan, Kim, Jisoo, Gong, Shaoqin, Kamins, Theodore I., Yu, Zongfu, Wang, Zhehui, Harris, James S., and Ma, Zhenqiang. High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping. United States: N. p., Web. doi:10.1063/1.4985591.
Xia, Zhenyang, Zang, Kai, Liu, Dong, Zhou, Ming, Kim, Tong -June, Zhang, Huilong, Xue, Muyu, Park, Jeongpil, Morea, Matthew, Ryu, Jae Ha, Chang, Tzu -Hsuan, Kim, Jisoo, Gong, Shaoqin, Kamins, Theodore I., Yu, Zongfu, Wang, Zhehui, Harris, James S., & Ma, Zhenqiang. High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping. United States. doi:10.1063/1.4985591.
Xia, Zhenyang, Zang, Kai, Liu, Dong, Zhou, Ming, Kim, Tong -June, Zhang, Huilong, Xue, Muyu, Park, Jeongpil, Morea, Matthew, Ryu, Jae Ha, Chang, Tzu -Hsuan, Kim, Jisoo, Gong, Shaoqin, Kamins, Theodore I., Yu, Zongfu, Wang, Zhehui, Harris, James S., and Ma, Zhenqiang. 2017. "High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping". United States. doi:10.1063/1.4985591. https://www.osti.gov/servlets/purl/1377062.
@article{osti_1377062,
title = {High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping},
author = {Xia, Zhenyang and Zang, Kai and Liu, Dong and Zhou, Ming and Kim, Tong -June and Zhang, Huilong and Xue, Muyu and Park, Jeongpil and Morea, Matthew and Ryu, Jae Ha and Chang, Tzu -Hsuan and Kim, Jisoo and Gong, Shaoqin and Kamins, Theodore I. and Yu, Zongfu and Wang, Zhehui and Harris, James S. and Ma, Zhenqiang},
abstractNote = {Photo detection of ultraviolet (UV) light remains a challenge since the penetration depth of UV light is limited to the nanometer scale. Therefore, the doping profile and electric field in the top nanometer range of the photo detection devices become critical. Traditional UV photodetectors usually use a constant doping profile near the semiconductor surface, resulting in a negligible electric field, which limits the photo-generated carrier collection efficiency of the photodetector. Here, we demonstrate, via the use of an optimized gradient boron doping technique, that the carrier collection efficiency and photo responsivity under the UV wavelength region have been enhanced. Moreover, the ultrathin p+-i-n junction shows an avalanche gain of 2800 and an ultra-low junction capacitance (sub pico-farad), indicating potential applications in the low timing jitter single photon detection area.},
doi = {10.1063/1.4985591},
journal = {Applied Physics Letters},
number = 8,
volume = 111,
place = {United States},
year = {2017},
month = {8}
}