skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in Monolayer MoS 2

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1376940
Grant/Contract Number:  
AC02-05CH11231; AC02-05-CH11231; KC2207; KCWF16
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 119 Journal Issue: 8; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Yao, Kaiyuan, Yan, Aiming, Kahn, Salman, Suslu, Aslihan, Liang, Yufeng, Barnard, Edward S., Tongay, Sefaattin, Zettl, Alex, Borys, Nicholas J., and Schuck, P. James. Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in Monolayer MoS 2. United States: N. p., 2017. Web. doi:10.1103/PhysRevLett.119.087401.
Yao, Kaiyuan, Yan, Aiming, Kahn, Salman, Suslu, Aslihan, Liang, Yufeng, Barnard, Edward S., Tongay, Sefaattin, Zettl, Alex, Borys, Nicholas J., & Schuck, P. James. Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in Monolayer MoS 2. United States. doi:10.1103/PhysRevLett.119.087401.
Yao, Kaiyuan, Yan, Aiming, Kahn, Salman, Suslu, Aslihan, Liang, Yufeng, Barnard, Edward S., Tongay, Sefaattin, Zettl, Alex, Borys, Nicholas J., and Schuck, P. James. Fri . "Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in Monolayer MoS 2". United States. doi:10.1103/PhysRevLett.119.087401.
@article{osti_1376940,
title = {Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in Monolayer MoS 2},
author = {Yao, Kaiyuan and Yan, Aiming and Kahn, Salman and Suslu, Aslihan and Liang, Yufeng and Barnard, Edward S. and Tongay, Sefaattin and Zettl, Alex and Borys, Nicholas J. and Schuck, P. James},
abstractNote = {},
doi = {10.1103/PhysRevLett.119.087401},
journal = {Physical Review Letters},
number = 8,
volume = 119,
place = {United States},
year = {2017},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.119.087401

Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Analytical approach to excitonic properties of MoS 2
journal, March 2014


Linear Scaling of the Exciton Binding Energy versus the Band Gap of Two-Dimensional Materials
journal, August 2015


Photodetectors based on graphene, other two-dimensional materials and hybrid systems
journal, October 2014

  • Koppens, F. H. L.; Mueller, T.; Avouris, Ph.
  • Nature Nanotechnology, Vol. 9, Issue 10
  • DOI: 10.1038/nnano.2014.215

Emerging Photoluminescence in Monolayer MoS2
journal, April 2010

  • Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo
  • Nano Letters, Vol. 10, Issue 4, p. 1271-1275
  • DOI: 10.1021/nl903868w

Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy
journal, June 2011


Observation of Excitonic Rydberg States in Monolayer MoS 2 and WS 2 by Photoluminescence Excitation Spectroscopy
journal, April 2015

  • Hill, Heather M.; Rigosi, Albert F.; Roquelet, Cyrielle
  • Nano Letters, Vol. 15, Issue 5
  • DOI: 10.1021/nl504868p

Dynamical Excitonic Effects in Doped Two-Dimensional Semiconductors
journal, August 2016


Comment on “Linear Scaling of the Exciton Binding Energy versus the Band Gap of Two-Dimensional Materials”
journal, May 2017


Population inversion and giant bandgap renormalization in atomically thin WS2 layers
journal, June 2015


Influence of Excited Carriers on the Optical and Electronic Properties of MoS 2
journal, June 2014

  • Steinhoff, A.; Rösner, M.; Jahnke, F.
  • Nano Letters, Vol. 14, Issue 7
  • DOI: 10.1021/nl500595u

Direct Imaging of Band Profile in Single Layer MoS 2 on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending
journal, April 2014

  • Zhang, Chendong; Johnson, Amber; Hsu, Chang-Lung
  • Nano Letters, Vol. 14, Issue 5
  • DOI: 10.1021/nl501133c

Observation of Rapid Exciton–Exciton Annihilation in Monolayer Molybdenum Disulfide
journal, September 2014

  • Sun, Dezheng; Rao, Yi; Reider, Georg A.
  • Nano Letters, Vol. 14, Issue 10
  • DOI: 10.1021/nl5021975

Optical Spectrum of MoS 2 : Many-Body Effects and Diversity of Exciton States
journal, November 2013


Absorption of light by excitons and trions in monolayers of metal dichalcogenide Mo S 2 : Experiments and theory
journal, May 2014


Many-body correlations and excitonic effects in semiconductor spectroscopy
journal, January 2006


Intervalley biexcitons and many-body effects in monolayer MoS 2
journal, September 2015


Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010


Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy
journal, October 2014

  • Klots, A. R.; Newaz, A. K. M.; Wang, Bin
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep06608

Defect-Induced Photoluminescence in Monolayer Semiconducting Transition Metal Dichalcogenides
journal, January 2015

  • Chow, Philippe K.; Jacobs-Gedrim, Robin B.; Gao, Jian
  • ACS Nano, Vol. 9, Issue 2
  • DOI: 10.1021/nn5073495

Monolayer excitonic laser
journal, October 2015


Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides
journal, September 2012


Electrical control of neutral and charged excitons in a monolayer semiconductor
journal, February 2013

  • Ross, Jason S.; Wu, Sanfeng; Yu, Hongyi
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms2498

Electronic Structure and Luminescence of Quasi-Freestanding MoS 2 Nanopatches on Au(111)
journal, July 2016


Atomically thin p–n junctions with van der Waals heterointerfaces
journal, August 2014

  • Lee, Chul-Ho; Lee, Gwan-Hyoung; van der Zande, Arend M.
  • Nature Nanotechnology, Vol. 9, Issue 9
  • DOI: 10.1038/nnano.2014.150

Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
journal, August 2014

  • Ugeda, Miguel M.; Bradley, Aaron J.; Shi, Su-Fei
  • Nature Materials, Vol. 13, Issue 12
  • DOI: 10.1038/nmat4061

Trion-Induced Negative Photoconductivity in Monolayer MoS 2
journal, October 2014


Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
journal, September 2013

  • Tongay, Sefaattin; Suh, Joonki; Ataca, Can
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep02657

Exciton radiative lifetime in transition metal dichalcogenide monolayers
journal, May 2016


Tightly Bound Excitons in Monolayer WSe 2
journal, July 2014


The quasiparticle zoo
journal, December 2016

  • Venema, Liesbeth; Verberck, Bart; Georgescu, Iulia
  • Nature Physics, Vol. 12, Issue 12
  • DOI: 10.1038/nphys3977

Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials
journal, July 2013

  • Bernardi, Marco; Palummo, Maurizia; Grossman, Jeffrey C.
  • Nano Letters, Vol. 13, Issue 8, p. 3664-3670
  • DOI: 10.1021/nl401544y

Voltage-controlled quantum light from an atomically thin semiconductor
journal, May 2015

  • Chakraborty, Chitraleema; Kinnischtzke, Laura; Goodfellow, Kenneth M.
  • Nature Nanotechnology, Vol. 10, Issue 6
  • DOI: 10.1038/nnano.2015.79

Anomalous Above-Gap Photoexcitations and Optical Signatures of Localized Charge Puddles in Monolayer Molybdenum Disulfide
journal, February 2017


Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
journal, April 2015

  • Cui, Xu; Lee, Gwan-Hyoung; Kim, Young Duck
  • Nature Nanotechnology, Vol. 10, Issue 6
  • DOI: 10.1038/nnano.2015.70

Optical identification of sulfur vacancies: Bound excitons at the edges of monolayer tungsten disulfide
journal, April 2017

  • Carozo, Victor; Wang, Yuanxi; Fujisawa, Kazunori
  • Science Advances, Vol. 3, Issue 4
  • DOI: 10.1126/sciadv.1602813

Atomic-Scale Spectroscopy of Gated Monolayer MoS 2
journal, April 2016


Electrical Tuning of Exciton Binding Energies in Monolayer WS 2
journal, September 2015


Carrier Plasmon Induced Nonlinear Band Gap Renormalization in Two-Dimensional Semiconductors
journal, February 2015


Terahertz-induced exciton signatures in semiconductors: Terahertz-induced exciton signatures in semiconductors
journal, June 2013

  • Böttge, C. N.; Koch, S. W.; Schneebeli, L.
  • physica status solidi (b), Vol. 250, Issue 9
  • DOI: 10.1002/pssb.201200704

Tightly bound trions in monolayer MoS2
journal, December 2012

  • Mak, Kin Fai; He, Keliang; Lee, Changgu
  • Nature Materials, Vol. 12, Issue 3
  • DOI: 10.1038/nmat3505

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
journal, August 2014

  • Kappera, Rajesh; Voiry, Damien; Yalcin, Sibel Ebru
  • Nature Materials, Vol. 13, Issue 12, p. 1128-1134
  • DOI: 10.1038/nmat4080

Evolution of Electronic Structure in Atomically Thin Sheets of WS 2 and WSe 2
journal, December 2012

  • Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang
  • ACS Nano, Vol. 7, Issue 1
  • DOI: 10.1021/nn305275h

Engineering Bandgaps of Monolayer MoS 2 and WS 2 on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects
journal, May 2016


Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS 2
journal, August 2014


Many-body aspects of the optical spectra of bulk and low-dimensional doped semiconductors
journal, May 1987


Monolayer semiconductor nanocavity lasers with ultralow thresholds
journal, March 2015

  • Wu, Sanfeng; Buckley, Sonia; Schaibley, John R.
  • Nature, Vol. 520, Issue 7545
  • DOI: 10.1038/nature14290

Single-layer MoS2 transistors
journal, January 2011

  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279

Photocarrier relaxation pathway in two-dimensional semiconducting transition metal dichalcogenides
journal, July 2014

  • Kozawa, Daichi; Kumar, Rajeev; Carvalho, Alexandra
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5543

High Performance Multilayer MoS2Transistors with Scandium Contacts
journal, December 2012

  • Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma
  • Nano Letters, Vol. 13, Issue 1, p. 100-105
  • DOI: 10.1021/nl303583v

Quasiparticle band structures and optical properties of strained monolayer MoS 2 and WS 2
journal, April 2013


Control of valley polarization in monolayer MoS2 by optical helicity
journal, June 2012


Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS 2
journal, May 2012


All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS 2 /Graphene Heterostructures
journal, October 2015