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Title: Interfacial Thermal Conductance between Mechanically Exfoliated Black Phosphorus and SiOx : Effect of Thickness and Temperature

Abstract

Black phosphorus (BP) is one of new 2D materials that have attracted wide attention. This work reports the interfacial thermal conductance between BP flake and SiOx using Raman spectroscopy. From 293 K down to the 223 K, eight BP flakes in a thickness range of 16.6–113.7 nm are characterized. At 293 K, the largest interfacial thermal conductance is 1.14 × 108 W m−2 K−1 for a 82.1 nm thick BP flake, and the smallest one is 2.17 × 107 W m−2 K−1 for a 26.6 nm thick BP flake. Such large interfacial thermal conductance can be attributed to the excellent interface contact and strong phonon coupling between BP and SiOx. Furthermore, the measured interfacial thermal conductance has a one‐fold up to around four‐fold increase with decreased temperature from 293 to 223 K, which is a result of thermal‐expansion‐mismatch induced variation in the morphology of BP flakes. Additionally, it demonstrates no thickness‐dependent behavior. It is speculated the intrinsic thickness dependence is weak and is overshadowed by the large variation in the interface contact of different samples. As a new 2D material, BP shows great potential to be a thermal interface material for heat dissipation in electronics.

Authors:
 [1];  [1];  [1];  [2];  [1]; ORCiD logo [1]
  1. Iowa State Univ., Ames, IA (United States)
  2. Shanghai Univ. of Engineering Science, Shanghai (China)
Publication Date:
Research Org.:
Iowa State Univ., Ames, IA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); National Science Foundation (NSF); Iowa Energy Center
OSTI Identifier:
1533051
Alternate Identifier(s):
OSTI ID: 1376746
Grant/Contract Number:  
EE0007686; NE0000671; CBET1235852; CMMI1264399; MG-16-025; OG-17-005
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials Interfaces
Additional Journal Information:
Journal Volume: 4; Journal Issue: 16; Journal ID: ISSN 2196-7350
Publisher:
Wiley-VCH
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; black phosphorus; interfacial thermal conductance; Raman spectroscopy; thermal expansion

Citation Formats

Wang, Tianyu, Wang, Ridong, Yuan, Pengyu, Xu, Shen, Liu, Jing, and Wang, Xinwei. Interfacial Thermal Conductance between Mechanically Exfoliated Black Phosphorus and SiOx : Effect of Thickness and Temperature. United States: N. p., 2017. Web. doi:10.1002/admi.201700233.
Wang, Tianyu, Wang, Ridong, Yuan, Pengyu, Xu, Shen, Liu, Jing, & Wang, Xinwei. Interfacial Thermal Conductance between Mechanically Exfoliated Black Phosphorus and SiOx : Effect of Thickness and Temperature. United States. https://doi.org/10.1002/admi.201700233
Wang, Tianyu, Wang, Ridong, Yuan, Pengyu, Xu, Shen, Liu, Jing, and Wang, Xinwei. Mon . "Interfacial Thermal Conductance between Mechanically Exfoliated Black Phosphorus and SiOx : Effect of Thickness and Temperature". United States. https://doi.org/10.1002/admi.201700233. https://www.osti.gov/servlets/purl/1533051.
@article{osti_1533051,
title = {Interfacial Thermal Conductance between Mechanically Exfoliated Black Phosphorus and SiOx : Effect of Thickness and Temperature},
author = {Wang, Tianyu and Wang, Ridong and Yuan, Pengyu and Xu, Shen and Liu, Jing and Wang, Xinwei},
abstractNote = {Black phosphorus (BP) is one of new 2D materials that have attracted wide attention. This work reports the interfacial thermal conductance between BP flake and SiOx using Raman spectroscopy. From 293 K down to the 223 K, eight BP flakes in a thickness range of 16.6–113.7 nm are characterized. At 293 K, the largest interfacial thermal conductance is 1.14 × 108 W m−2 K−1 for a 82.1 nm thick BP flake, and the smallest one is 2.17 × 107 W m−2 K−1 for a 26.6 nm thick BP flake. Such large interfacial thermal conductance can be attributed to the excellent interface contact and strong phonon coupling between BP and SiOx. Furthermore, the measured interfacial thermal conductance has a one‐fold up to around four‐fold increase with decreased temperature from 293 to 223 K, which is a result of thermal‐expansion‐mismatch induced variation in the morphology of BP flakes. Additionally, it demonstrates no thickness‐dependent behavior. It is speculated the intrinsic thickness dependence is weak and is overshadowed by the large variation in the interface contact of different samples. As a new 2D material, BP shows great potential to be a thermal interface material for heat dissipation in electronics.},
doi = {10.1002/admi.201700233},
journal = {Advanced Materials Interfaces},
number = 16,
volume = 4,
place = {United States},
year = {Mon Jul 10 00:00:00 EDT 2017},
month = {Mon Jul 10 00:00:00 EDT 2017}
}

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Cited by: 16 works
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Works referenced in this record:

Vacancy-defect–induced diminution of thermal conductivity in silicene
journal, August 2012


Anisotropic Mechanical Properties of Black Phosphorus Nanoribbons
journal, December 2016

  • Chen, Hao; Huang, Peng; Guo, Dan
  • The Journal of Physical Chemistry C, Vol. 120, Issue 51
  • DOI: 10.1021/acs.jpcc.6b10644

Superior mechanical flexibility of phosphorene and few-layer black phosphorus
journal, June 2014

  • Wei, Qun; Peng, Xihong
  • Applied Physics Letters, Vol. 104, Issue 25
  • DOI: 10.1063/1.4885215

Isolation and characterization of few-layer black phosphorus
journal, June 2014


Probing molecular dynamics at the nanoscale via an individual paramagnetic centre
journal, October 2015

  • Staudacher, T.; Raatz, N.; Pezzagna, S.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms9527

Negative Thermal Expansion Coefficient of Graphene Measured by Raman Spectroscopy
journal, August 2011

  • Yoon, Duhee; Son, Young-Woo; Cheong, Hyeonsik
  • Nano Letters, Vol. 11, Issue 8
  • DOI: 10.1021/nl201488g

Composition and structure of the native Si oxide by high depth resolution medium energy ion scatering
journal, January 1991


Molecular dynamics simulation of the interfacial thermal resistance between phosphorene and silicon substrate
journal, January 2017


Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
journal, July 2014

  • Xia, Fengnian; Wang, Han; Jia, Yichen
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5458

Anisotropic Electron-Photon and Electron-Phonon Interactions in Black Phosphorus
journal, March 2016


First-principles study of thermal expansion and thermomechanics of single-layer black and blue phosphorus
journal, May 2016


High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
journal, July 2014

  • Qiao, Jingsi; Kong, Xianghua; Hu, Zhi-Xin
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5475

Photooxidation and quantum confinement effects in exfoliated black phosphorus
journal, May 2015

  • Favron, Alexandre; Gaufrès, Etienne; Fossard, Frédéric
  • Nature Materials, Vol. 14, Issue 8
  • DOI: 10.1038/nmat4299

Highly anisotropic and robust excitons in monolayer black phosphorus
journal, April 2015

  • Wang, Xiaomu; Jones, Aaron M.; Seyler, Kyle L.
  • Nature Nanotechnology, Vol. 10, Issue 6
  • DOI: 10.1038/nnano.2015.71

Effects of temperature and disorder on thermal boundary conductance at solid–solid interfaces: Nonequilibrium molecular dynamics simulations
journal, September 2007


Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus
journal, April 2014


Anisotropic in-plane thermal conductivity of black phosphorus nanoribbons at temperatures higher than 100 K
journal, October 2015

  • Lee, Sangwook; Yang, Fan; Suh, Joonki
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms9573

Mechanical properties of single-layer black phosphorus
journal, August 2014


Interfacial thermal conductance between few to tens of layered-MoS2 and c-Si: Effect of MoS2 thickness
journal, January 2017


Temperature and Thickness Dependences of the Anisotropic In-Plane Thermal Conductivity of Black Phosphorus
journal, November 2016

  • Smith, Brandon; Vermeersch, Bjorn; Carrete, Jesús
  • Advanced Materials, Vol. 29, Issue 5
  • DOI: 10.1002/adma.201603756

Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors
journal, May 2014

  • Buscema, Michele; Groenendijk, Dirk J.; Blanter, Sofya I.
  • Nano Letters, Vol. 14, Issue 6
  • DOI: 10.1021/nl5008085

Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation
journal, November 2014

  • Wood, Joshua D.; Wells, Spencer A.; Jariwala, Deep
  • Nano Letters, Vol. 14, Issue 12
  • DOI: 10.1021/nl5032293

Recommended Values for the Thermal Expansivity of Silicon from 0 to 1000 K
journal, April 1983

  • Swenson, C. A.
  • Journal of Physical and Chemical Reference Data, Vol. 12, Issue 2
  • DOI: 10.1063/1.555681

Effects of substrate type and material-substrate bonding on high-temperature behavior of monolayer WS2
journal, August 2015


Temperature Dependence of Anisotropic Thermal-Conductivity Tensor of Bulk Black Phosphorus
journal, November 2016


Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
journal, April 2014


Optical Anisotropy of Black Phosphorus in the Visible Regime
journal, December 2015

  • Mao, Nannan; Tang, Jingyi; Xie, Liming
  • Journal of the American Chemical Society, Vol. 138, Issue 1
  • DOI: 10.1021/jacs.5b10685

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
journal, March 2014

  • Liu, Han; Neal, Adam T.; Zhu, Zhen
  • ACS Nano, Vol. 8, Issue 4
  • DOI: 10.1021/nn501226z

Temperature Dependent Phonon Shifts in Few-Layer Black Phosphorus
journal, March 2015

  • Late, Dattatray J.
  • ACS Applied Materials & Interfaces, Vol. 7, Issue 10
  • DOI: 10.1021/am509056b

Five Orders of Magnitude Reduction in Energy Coupling across Corrugated Graphene/Substrate Interfaces
journal, February 2014

  • Tang, Xiaoduan; Xu, Shen; Zhang, Jingchao
  • ACS Applied Materials & Interfaces, Vol. 6, Issue 4
  • DOI: 10.1021/am405388a

Anisotropic Thermal Conductivity of Exfoliated Black Phosphorus
journal, October 2015

  • Jang, Hyejin; Wood, Joshua D.; Ryder, Christopher R.
  • Advanced Materials, Vol. 27, Issue 48
  • DOI: 10.1002/adma.201503466

Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere
journal, April 2015

  • Doganov, Rostislav A.; O’Farrell, Eoin C. T.; Koenig, Steven P.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms7647

Black phosphorus field-effect transistors
journal, March 2014


Growth of native oxide on a silicon surface
journal, August 1990

  • Morita, M.; Ohmi, T.; Hasegawa, E.
  • Journal of Applied Physics, Vol. 68, Issue 3, p. 1272-1281
  • DOI: 10.1063/1.347181

Temperature-Dependent Thermal Properties of Supported MoS 2 Monolayers
journal, February 2015

  • Taube, Andrzej; Judek, Jarosław; Łapińska, Anna
  • ACS Applied Materials & Interfaces, Vol. 7, Issue 9
  • DOI: 10.1021/acsami.5b00690

Works referencing / citing this record:

Impact of Nanoscale Roughness on Heat Transport across the Solid–Solid Interface
journal, December 2019

  • Wang, Jingwei; Zhang, Zhongwei; Shi, Run
  • Advanced Materials Interfaces, Vol. 7, Issue 4
  • DOI: 10.1002/admi.201901582

Nonmonotonic thickness-dependence of in-plane thermal conductivity of few-layered MoS 2 : 2.4 to 37.8 nm
journal, January 2018

  • Yuan, Pengyu; Wang, Ridong; Wang, Tianyu
  • Physical Chemistry Chemical Physics, Vol. 20, Issue 40
  • DOI: 10.1039/c8cp02858c

Size-dependent interface thermal conductance in black phosphorus/SiO 2 heterojunctions
journal, November 2018