Ultrafast Hole Trapping and Relaxation Dynamics in p-Type CuS Nanodisks
Abstract
CuS nanocrystals are potential materials for developing low-cost solar energy conversion devices. Understanding the underlying dynamics of photoinduced carriers in CuS nanocrystals is essential to improve their performance in these devices. In this work, we investigated the photoinduced hole dynamics in CuS nanodisks (NDs) using the combination of transient optical (OTA) and X-ray (XTA) absorption spectroscopy. OTA results show that the broad transient absorption in the visible region is attributed to the photoinduced hot and trapped holes. The hole trapping process occurs on a subpicosecond time scale, followed by carrier recombination (~100 ps). The nature of the hole trapping sites, revealed by XTA, is characteristic of S or organic ligands on the surface of CuS NDs. Lastly, these results not only suggest the possibility to control the hole dynamics by tuning the surface chemistry of CuS but also represent the first time observation of hole dynamics in semiconductor nanocrystals using XTA.
- Authors:
-
- Marquette Univ., Milwaukee, WI (United States)
- Lanzhou Univ., Gansu (People's Republic of China)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22), Scientific User Facilities Division; Marquette University; National Natural Science Foundation of China (NSFC); Argonne National Laboratory, Advanced Photon Source
- OSTI Identifier:
- 1376714
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Physical Chemistry Letters
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 14; Journal ID: ISSN 1948-7185
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; CuS nanodisks; energy conversion; optical transient absorption spectroscopy; X-ray transient absorption spectroscopy
Citation Formats
Ludwig, John, An, Li, Pattengale, Brian, Kong, Qingyu, Zhang, Xiaoyi, Xi, Pinxian, and Huang, Jier. Ultrafast Hole Trapping and Relaxation Dynamics in p-Type CuS Nanodisks. United States: N. p., 2015.
Web. doi:10.1021/acs.jpclett.5b01078.
Ludwig, John, An, Li, Pattengale, Brian, Kong, Qingyu, Zhang, Xiaoyi, Xi, Pinxian, & Huang, Jier. Ultrafast Hole Trapping and Relaxation Dynamics in p-Type CuS Nanodisks. United States. https://doi.org/10.1021/acs.jpclett.5b01078
Ludwig, John, An, Li, Pattengale, Brian, Kong, Qingyu, Zhang, Xiaoyi, Xi, Pinxian, and Huang, Jier. Mon .
"Ultrafast Hole Trapping and Relaxation Dynamics in p-Type CuS Nanodisks". United States. https://doi.org/10.1021/acs.jpclett.5b01078. https://www.osti.gov/servlets/purl/1376714.
@article{osti_1376714,
title = {Ultrafast Hole Trapping and Relaxation Dynamics in p-Type CuS Nanodisks},
author = {Ludwig, John and An, Li and Pattengale, Brian and Kong, Qingyu and Zhang, Xiaoyi and Xi, Pinxian and Huang, Jier},
abstractNote = {CuS nanocrystals are potential materials for developing low-cost solar energy conversion devices. Understanding the underlying dynamics of photoinduced carriers in CuS nanocrystals is essential to improve their performance in these devices. In this work, we investigated the photoinduced hole dynamics in CuS nanodisks (NDs) using the combination of transient optical (OTA) and X-ray (XTA) absorption spectroscopy. OTA results show that the broad transient absorption in the visible region is attributed to the photoinduced hot and trapped holes. The hole trapping process occurs on a subpicosecond time scale, followed by carrier recombination (~100 ps). The nature of the hole trapping sites, revealed by XTA, is characteristic of S or organic ligands on the surface of CuS NDs. Lastly, these results not only suggest the possibility to control the hole dynamics by tuning the surface chemistry of CuS but also represent the first time observation of hole dynamics in semiconductor nanocrystals using XTA.},
doi = {10.1021/acs.jpclett.5b01078},
journal = {Journal of Physical Chemistry Letters},
number = 14,
volume = 6,
place = {United States},
year = {Mon Jun 22 00:00:00 EDT 2015},
month = {Mon Jun 22 00:00:00 EDT 2015}
}
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