High-performance multilayer WSe2 field-effect transistors with carrier type control
Abstract
In this study, high-performance multilayer WSe2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe2 thickness. The carrier type evolves with increasing WSe2 channel thickness, being p-type, ambipolar, and n-type at thicknesses <3, ~4, and >5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe2 as a function of the thickness and the carrier band offsets relative to the metal contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. This work demonstrates progress towards the realization of high-performance multilayer WSe2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.
- Authors:
-
- Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences; Univ. of Tennessee, Knoxville, TN (United States). Bredesen Center for Interdisciplinary Research and Graduate Education
- Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences
- Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
- Publication Date:
- Research Org.:
- Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Laboratory Directed Research and Development (LDRD) Program; Gordon and Betty Moore Foundation (United States); National Science Foundation (NSF)
- OSTI Identifier:
- 1376482
- Alternate Identifier(s):
- OSTI ID: 1423050
- Grant/Contract Number:
- AC05-00OR22725; SC0002136; GBMF4416; DMR-1410940
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Research
- Additional Journal Information:
- Journal Volume: 11; Journal Issue: 2; Journal ID: ISSN 1998-0124
- Publisher:
- Springer
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; transition metal dichalcogenide; field-effect transistors; carrier control; plasma treatment; carrier mobility
Citation Formats
Pudasaini, Pushpa Raj, Oyedele, Akinola, Zhang, Cheng, Stanford, Michael G., Cross, Nicholas, Wong, Anthony T., Hoffman, Anna N., Xiao, Kai, Duscher, Gerd, Mandrus, David G., Ward, Thomas Z., and Rack, Philip D. High-performance multilayer WSe2 field-effect transistors with carrier type control. United States: N. p., 2017.
Web. doi:10.1007/s12274-017-1681-5.
Pudasaini, Pushpa Raj, Oyedele, Akinola, Zhang, Cheng, Stanford, Michael G., Cross, Nicholas, Wong, Anthony T., Hoffman, Anna N., Xiao, Kai, Duscher, Gerd, Mandrus, David G., Ward, Thomas Z., & Rack, Philip D. High-performance multilayer WSe2 field-effect transistors with carrier type control. United States. https://doi.org/10.1007/s12274-017-1681-5
Pudasaini, Pushpa Raj, Oyedele, Akinola, Zhang, Cheng, Stanford, Michael G., Cross, Nicholas, Wong, Anthony T., Hoffman, Anna N., Xiao, Kai, Duscher, Gerd, Mandrus, David G., Ward, Thomas Z., and Rack, Philip D. Thu .
"High-performance multilayer WSe2 field-effect transistors with carrier type control". United States. https://doi.org/10.1007/s12274-017-1681-5. https://www.osti.gov/servlets/purl/1376482.
@article{osti_1376482,
title = {High-performance multilayer WSe2 field-effect transistors with carrier type control},
author = {Pudasaini, Pushpa Raj and Oyedele, Akinola and Zhang, Cheng and Stanford, Michael G. and Cross, Nicholas and Wong, Anthony T. and Hoffman, Anna N. and Xiao, Kai and Duscher, Gerd and Mandrus, David G. and Ward, Thomas Z. and Rack, Philip D.},
abstractNote = {In this study, high-performance multilayer WSe2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe2 thickness. The carrier type evolves with increasing WSe2 channel thickness, being p-type, ambipolar, and n-type at thicknesses <3, ~4, and >5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe2 as a function of the thickness and the carrier band offsets relative to the metal contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. This work demonstrates progress towards the realization of high-performance multilayer WSe2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.},
doi = {10.1007/s12274-017-1681-5},
journal = {Nano Research},
number = 2,
volume = 11,
place = {United States},
year = {Thu Jul 06 00:00:00 EDT 2017},
month = {Thu Jul 06 00:00:00 EDT 2017}
}
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