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Title: Defect Facilitated Phonon Transport through Kinks in Boron Carbide Nanowires

Nanowires of complex morphologies, such as kinked wires, have been recently synthesized and demonstrated for novel devices and applications. However, the effects of these morphologies on thermal transport have not been well studied. Through systematic experimental measurements, we show in this paper that single-crystalline, defect-free kinks in boron carbide nanowires can pose a thermal resistance up to ~30 times larger than that of a straight wire segment of equivalent length. Analysis suggests that this pronounced resistance can be attributed to the combined effects of backscattering of highly focused phonons and required mode conversion at the kink. Interestingly, it is also found that instead of posing resistance, structural defects in the kink can actually assist phonon transport through the kink and reduce its resistance. Finally, given the common kink-like wire morphology in nanoelectronic devices and required low thermal conductivity for thermoelectric devices, these findings have important implications in precise thermal management of electronic devices and thermoelectrics.
Authors:
ORCiD logo [1] ;  [2] ;  [3] ;  [2] ;  [1] ;  [4] ;  [1] ;  [2] ;  [2] ;  [5] ;  [3] ;  [6] ;  [3] ;  [2] ; ORCiD logo [1]
  1. Vanderbilt Univ., Nashville, TN (United States). Dept. of Mechanical Engineering
  2. Univ. of North Carolina, Charlotte, NC (United States). Dept. of Mechanical Engineering and Engineering Science
  3. Southeast Univ., Nanjing (China). School of Mechanical Engineering. Jiangsu Key Lab. for Design and Manufacture of Micro-Nano Biomedical Instruments
  4. Vanderbilt Univ., Nashville, TN (United States). Dept. of Mechanical Engineering; Southeast Univ., Nanjing (China). School of Mechanical Engineering. Jiangsu Key Lab. for Design and Manufacture of Micro-Nano Biomedical Instruments
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences. Nanofabrication Research Lab.
  6. Chinese Univ. of Hong Kong (China). Dept. of Mechanical and Automation Engineering
Publication Date:
Grant/Contract Number:
AC05-00OR22725; DMR-1308550; DMR-1308509; DMR-1532107; 51276153
Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 17; Journal Issue: 6; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Research Org:
Vanderbilt Univ., Nashville, TN (United States); Univ. of North Carolina, Charlotte, NC (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Southeast Univ., Nanjing (China)
Sponsoring Org:
USDOE Office of Science (SC); National Science Foundation (NSF); National Natural Science Foundation of China (NNSFC)
Contributing Orgs:
Chinese Univ. of Hong Kong (China)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; boron carbides; kinks; nanowires; phonon focusing; phonon mode conversion; thermal conductivity
OSTI Identifier:
1376478

Zhang, Qian, Cui, Zhiguang, Wei, Zhiyong, Chang, Siang Yee, Yang, Lin, Zhao, Yang, Yang, Yang, Guan, Zhe, Jiang, Youfei, Fowlkes, Jason, Yang, Juekuan, Xu, Dongyan, Chen, Yunfei, Xu, Terry T., and Li, Deyu. Defect Facilitated Phonon Transport through Kinks in Boron Carbide Nanowires. United States: N. p., Web. doi:10.1021/acs.nanolett.7b00666.
Zhang, Qian, Cui, Zhiguang, Wei, Zhiyong, Chang, Siang Yee, Yang, Lin, Zhao, Yang, Yang, Yang, Guan, Zhe, Jiang, Youfei, Fowlkes, Jason, Yang, Juekuan, Xu, Dongyan, Chen, Yunfei, Xu, Terry T., & Li, Deyu. Defect Facilitated Phonon Transport through Kinks in Boron Carbide Nanowires. United States. doi:10.1021/acs.nanolett.7b00666.
Zhang, Qian, Cui, Zhiguang, Wei, Zhiyong, Chang, Siang Yee, Yang, Lin, Zhao, Yang, Yang, Yang, Guan, Zhe, Jiang, Youfei, Fowlkes, Jason, Yang, Juekuan, Xu, Dongyan, Chen, Yunfei, Xu, Terry T., and Li, Deyu. 2017. "Defect Facilitated Phonon Transport through Kinks in Boron Carbide Nanowires". United States. doi:10.1021/acs.nanolett.7b00666. https://www.osti.gov/servlets/purl/1376478.
@article{osti_1376478,
title = {Defect Facilitated Phonon Transport through Kinks in Boron Carbide Nanowires},
author = {Zhang, Qian and Cui, Zhiguang and Wei, Zhiyong and Chang, Siang Yee and Yang, Lin and Zhao, Yang and Yang, Yang and Guan, Zhe and Jiang, Youfei and Fowlkes, Jason and Yang, Juekuan and Xu, Dongyan and Chen, Yunfei and Xu, Terry T. and Li, Deyu},
abstractNote = {Nanowires of complex morphologies, such as kinked wires, have been recently synthesized and demonstrated for novel devices and applications. However, the effects of these morphologies on thermal transport have not been well studied. Through systematic experimental measurements, we show in this paper that single-crystalline, defect-free kinks in boron carbide nanowires can pose a thermal resistance up to ~30 times larger than that of a straight wire segment of equivalent length. Analysis suggests that this pronounced resistance can be attributed to the combined effects of backscattering of highly focused phonons and required mode conversion at the kink. Interestingly, it is also found that instead of posing resistance, structural defects in the kink can actually assist phonon transport through the kink and reduce its resistance. Finally, given the common kink-like wire morphology in nanoelectronic devices and required low thermal conductivity for thermoelectric devices, these findings have important implications in precise thermal management of electronic devices and thermoelectrics.},
doi = {10.1021/acs.nanolett.7b00666},
journal = {Nano Letters},
number = 6,
volume = 17,
place = {United States},
year = {2017},
month = {5}
}