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Title: Response Variability in Commercial MOSFET SEE Qualification

Abstract

Single-event effects (SEE) evaluation of five different part types of next generation, commercial trench MOSFETs indicates large part-to-part variation in determining a safe operating area (SOA) for drain-source voltage (VDS) following a test campaign that exposed >50 samples per part type to heavy ions. These results suggest a determination of a SOA using small sample sizes may fail to capture the full extent of the part-to-part variability. An example method is discussed for establishing a Safe Operating Area using a one-sided statistical tolerance limit based on the number of test samples. Finally, burn-in is shown to be a critical factor in reducing part-to-part variation in part response. Implications for radiation qualification requirements are also explored.

Authors:
 [1];  [2];  [1];  [2];  [2];  [1];  [2];  [2];  [3];  [4];  [5]
+ Show Author Affiliations
  1. Aerospace Corporation, El Segundo, CA (United States)
  2. Lockheed Martin Corp., Littleton, CO (United States)
  3. NASA Goddard Space Flight Center (GSFC), Greenbelt, MD (United States)
  4. NAVSEA Crane, Crane, IN (United States)
  5. Brookhaven National Lab. (BNL), Upton, NY (United States). NASA Space Radiation Lab. (NSRL)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Nuclear Physics (NP)
OSTI Identifier:
1376083
Report Number(s):
BNL-113823-2017-JA
Journal ID: ISSN 0018-9499; R&D Project: KBCH139; 21736; KB0202011; TRN: US1702212
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 64; Journal Issue: 1; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; trench; Failure distribution; MOSFET; single-event burnout; Logic gates; Guidelines; Qualifications; Gaussian distribution; Histograms; Semiconductor optical amplifiers

Citation Formats

George, J. S., Clymer, D. A., Turflinger, T. L., Mason, L. W., Stone, S., Koga, R., Beach, E., Huntington, K., Lauenstein, J. -M., Titus, J., and Sivertz, M. Response Variability in Commercial MOSFET SEE Qualification. United States: N. p., 2016. Web. doi:10.1109/TNS.2016.2633358.
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George, J. S., Clymer, D. A., Turflinger, T. L., Mason, L. W., Stone, S., Koga, R., Beach, E., Huntington, K., Lauenstein, J. -M., Titus, J., & Sivertz, M. Response Variability in Commercial MOSFET SEE Qualification. United States. https://doi.org/10.1109/TNS.2016.2633358
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George, J. S., Clymer, D. A., Turflinger, T. L., Mason, L. W., Stone, S., Koga, R., Beach, E., Huntington, K., Lauenstein, J. -M., Titus, J., and Sivertz, M. Thu . "Response Variability in Commercial MOSFET SEE Qualification". United States. https://doi.org/10.1109/TNS.2016.2633358. https://www.osti.gov/servlets/purl/1376083.
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@article{osti_1376083,
title = {Response Variability in Commercial MOSFET SEE Qualification},
author = {George, J. S. and Clymer, D. A. and Turflinger, T. L. and Mason, L. W. and Stone, S. and Koga, R. and Beach, E. and Huntington, K. and Lauenstein, J. -M. and Titus, J. and Sivertz, M.},
abstractNote = {Single-event effects (SEE) evaluation of five different part types of next generation, commercial trench MOSFETs indicates large part-to-part variation in determining a safe operating area (SOA) for drain-source voltage (VDS) following a test campaign that exposed >50 samples per part type to heavy ions. These results suggest a determination of a SOA using small sample sizes may fail to capture the full extent of the part-to-part variability. An example method is discussed for establishing a Safe Operating Area using a one-sided statistical tolerance limit based on the number of test samples. Finally, burn-in is shown to be a critical factor in reducing part-to-part variation in part response. Implications for radiation qualification requirements are also explored.},
doi = {10.1109/TNS.2016.2633358},
journal = {IEEE Transactions on Nuclear Science},
number = 1,
volume = 64,
place = {United States},
year = {Thu Dec 01 00:00:00 EST 2016},
month = {Thu Dec 01 00:00:00 EST 2016}
}
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Publisher's Version of Record
https://doi.org/10.1109/TNS.2016.2633358
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