Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si

Tanaka, Atsunori; Choi, Woojin; Chen, Renjie; Dayeh, Shadi A.

doi:10.1002/adma.201702557

Title: Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si

Abstract

Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain‐relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN‐on‐Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack‐free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10 ⁷ cm ⁻² achieved to date in GaN‐on‐Si is demonstrated. With these advances, the first vertical GaN metal–insulator–semiconductor field‐effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost‐effective high power device paradigm on an Si CMOS platform are demonstrated

Authors:

Tanaka, Atsunori ^[1]; Choi, Woojin ^[2]; Chen, Renjie ^[2];

^[3]

Materials Science and Engineering Program University of California San Diego La Jolla CA 92093 USA
Department of Electrical and Computer Engineering University of California San Diego La Jolla CA 92093 USA
Materials Science and Engineering Program University of California San Diego La Jolla CA 92093 USA, Department of Electrical and Computer Engineering University of California San Diego La Jolla CA 92093 USA, Department of NanoEngineering University of California San Diego La Jolla CA 92093 USA

Publication Date:: Mon Aug 21 00:00:00 EDT 2017

Sponsoring Org.:: USDOE

OSTI Identifier:: 1375658

Grant/Contract Number:: DE‐AC04‐94AL85000

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Advanced Materials

Additional Journal Information:: Journal Name: Advanced Materials Journal Volume: 29 Journal Issue: 38; Journal ID: ISSN 0935-9648

Publisher:: Wiley Blackwell (John Wiley & Sons)

Country of Publication:: Germany

Language:: English

Citation Formats


                    Tanaka, Atsunori, Choi, Woojin, Chen, Renjie, and Dayeh, Shadi A. Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.  Germany: N. p., 2017. 
Web.  doi:10.1002/adma.201702557.

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                    Tanaka, Atsunori, Choi, Woojin, Chen, Renjie, & Dayeh, Shadi A. Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.  Germany.  https://doi.org/10.1002/adma.201702557

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                    Tanaka, Atsunori, Choi, Woojin, Chen, Renjie, and Dayeh, Shadi A. Mon .  
"Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si".  Germany.  https://doi.org/10.1002/adma.201702557.

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@article{osti_1375658,

  title        = {Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si},

  author       = {Tanaka, Atsunori and Choi, Woojin and Chen, Renjie and Dayeh, Shadi A.},

  abstractNote = {Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain‐relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN‐on‐Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack‐free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10 7 cm −2 achieved to date in GaN‐on‐Si is demonstrated. With these advances, the first vertical GaN metal–insulator–semiconductor field‐effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost‐effective high power device paradigm on an Si CMOS platform are demonstrated},

  doi          = {10.1002/adma.201702557},

  journal      = {Advanced Materials},

  number       = 38,

  volume       = 29,

  place        = {Germany},

  year         = {Mon Aug 21 00:00:00 EDT 2017},

  month        = {Mon Aug 21 00:00:00 EDT 2017}

}

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Similar Records

Title: Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si

Abstract

Citation Formats

Improving GaN-on-silicon properties for GaN device epitaxy journal, March 2011

OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET journal, December 2016

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Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire journal, November 2015

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Calculated elastic constants for stress problems associated with semiconductor devices journal, January 1973

In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates journal, March 2017

Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV journal, January 2014

High breakdown voltage p-n diodes on GaN on sapphire by MOCVD: High breakdown voltage p-n diodes journal, January 2016

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Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy journal, July 1998

Gallium Nitride Films journal, January 1971

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Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy journal, January 2002

Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition journal, March 2005

Lateral confined epitaxy of GaN layers on Si substrates journal, September 2001

Dislocation density reduction through annihilation in lattice‐mismatched semiconductors grown by molecular‐beam epitaxy journal, June 1988

Reliability studies of vertical GaN devices based on bulk GaN substrates journal, August 2015

Improving GaN-on-silicon properties for GaN device epitaxy
journal, March 2011

OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET
journal, December 2016

Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV
journal, November 2015

Selective growth of high quality GaN on Si(111) substrates
journal, April 2000

600 V/ $1.7~\Omega$ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor
journal, November 2016

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
journal, February 2008

High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates
journal, January 2007

Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire
journal, November 2015

1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate
journal, October 2012

A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
journal, April 2007

Calculated elastic constants for stress problems associated with semiconductor devices
journal, January 1973

In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates
journal, March 2017

Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV
journal, January 2014

High breakdown voltage p-n diodes on GaN on sapphire by MOCVD: High breakdown voltage p-n diodes
journal, January 2016

Interface Trap Density Reduction for Al ₂ O ₃ /GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition
journal, March 2015

Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy
journal, July 1998

Gallium Nitride Films
journal, January 1971

Sixteen years GaN on Si: Sixteen years GaN on Si
journal, February 2015

Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy
journal, January 2002

Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition
journal, March 2005

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Reliability studies of vertical GaN devices based on bulk GaN substrates
journal, August 2015