Correlated electron state in controlled through Si to P substitution
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1375555
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review Materials
- Additional Journal Information:
- Journal Name: Physical Review Materials Journal Volume: 1 Journal Issue: 3; Journal ID: ISSN 2475-9953
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Lai, Y., Saunders, S. M., Graf, D., Gallagher, A., Chen, K. -W., Kametani, F., Besara, T., Siegrist, T., Shekhter, A., and Baumbach, R. E. Correlated electron state in CeCu 2 Si 2 controlled through Si to P substitution. United States: N. p., 2017.
Web. doi:10.1103/PhysRevMaterials.1.034801.
Lai, Y., Saunders, S. M., Graf, D., Gallagher, A., Chen, K. -W., Kametani, F., Besara, T., Siegrist, T., Shekhter, A., & Baumbach, R. E. Correlated electron state in CeCu 2 Si 2 controlled through Si to P substitution. United States. https://doi.org/10.1103/PhysRevMaterials.1.034801
Lai, Y., Saunders, S. M., Graf, D., Gallagher, A., Chen, K. -W., Kametani, F., Besara, T., Siegrist, T., Shekhter, A., and Baumbach, R. E. Fri .
"Correlated electron state in CeCu 2 Si 2 controlled through Si to P substitution". United States. https://doi.org/10.1103/PhysRevMaterials.1.034801.
@article{osti_1375555,
title = {Correlated electron state in CeCu 2 Si 2 controlled through Si to P substitution},
author = {Lai, Y. and Saunders, S. M. and Graf, D. and Gallagher, A. and Chen, K. -W. and Kametani, F. and Besara, T. and Siegrist, T. and Shekhter, A. and Baumbach, R. E.},
abstractNote = {},
doi = {10.1103/PhysRevMaterials.1.034801},
journal = {Physical Review Materials},
number = 3,
volume = 1,
place = {United States},
year = {Fri Aug 18 00:00:00 EDT 2017},
month = {Fri Aug 18 00:00:00 EDT 2017}
}
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https://doi.org/10.1103/PhysRevMaterials.1.034801
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Cited by: 2 works
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