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Title: Phonon linewidth due to electron-phonon interactions with strong forward scattering in FeSe thin films on oxide substrates

Authors:
; ; ;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 96 Journal Issue: 5; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1375549

Wang, Yan, Rademaker, Louk, Dagotto, Elbio, and Johnston, Steven. Phonon linewidth due to electron-phonon interactions with strong forward scattering in FeSe thin films on oxide substrates. United States: N. p., Web. doi:10.1103/PhysRevB.96.054515.
Wang, Yan, Rademaker, Louk, Dagotto, Elbio, & Johnston, Steven. Phonon linewidth due to electron-phonon interactions with strong forward scattering in FeSe thin films on oxide substrates. United States. doi:10.1103/PhysRevB.96.054515.
Wang, Yan, Rademaker, Louk, Dagotto, Elbio, and Johnston, Steven. 2017. "Phonon linewidth due to electron-phonon interactions with strong forward scattering in FeSe thin films on oxide substrates". United States. doi:10.1103/PhysRevB.96.054515.
@article{osti_1375549,
title = {Phonon linewidth due to electron-phonon interactions with strong forward scattering in FeSe thin films on oxide substrates},
author = {Wang, Yan and Rademaker, Louk and Dagotto, Elbio and Johnston, Steven},
abstractNote = {},
doi = {10.1103/PhysRevB.96.054515},
journal = {Physical Review B},
number = 5,
volume = 96,
place = {United States},
year = {2017},
month = {8}
}