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Title: Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon

Authors:
 [1];  [1];  [1];  [1];  [2];  [2];  [3];  [4];  [5];  [6];  [7];  [7]
  1. Photon Science Institute, University of Manchester, Manchester M13 9PL UK
  2. Department of Physics and I3N, University of Aveiro, Campus Santiago, Aveiro 3810-193 Portugal
  3. Department of Engineering Sciences and Mathematics, Luleå University of Technology, SE-97187 Luleå Sweden
  4. Materials Research Center of NAS of Belarus, Minsk 220072 Belarus
  5. SunEdison Semiconductor Ltd., viale Gherzi 31 28100 Novara Italy
  6. SunEdison Inc., 7832 N. Leadbetter Rd. Portland Oregon 97203 USA
  7. Department of Physics, SMN, University of Oslo, Oslo N-0316 Norway
Publication Date:
Sponsoring Org.:
USDOE Office of Nuclear Energy (NE), Fuel Cycle Technologies (NE-5)
OSTI Identifier:
1375535
Grant/Contract Number:  
PTDC/CTM-ENE/1973/2012; UID/CTM/50025/2013
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physica Status Solidi rrl
Additional Journal Information:
Journal Name: Physica Status Solidi rrl Journal Volume: 11 Journal Issue: 8; Journal ID: ISSN 1862-6254
Country of Publication:
Germany
Language:
English

Citation Formats

Vaqueiro-Contreras, M., Markevich, V. P., Halsall, M. P., Peaker, A. R., Santos, P., Coutinho, J., Öberg, S., Murin, L. I., Falster, R., Binns, J., Monakhov, E. V., and Svensson, B. G. Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon. Germany: N. p., 2017. Web. doi:10.1002/pssr.201700133.
Vaqueiro-Contreras, M., Markevich, V. P., Halsall, M. P., Peaker, A. R., Santos, P., Coutinho, J., Öberg, S., Murin, L. I., Falster, R., Binns, J., Monakhov, E. V., & Svensson, B. G. Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon. Germany. doi:10.1002/pssr.201700133.
Vaqueiro-Contreras, M., Markevich, V. P., Halsall, M. P., Peaker, A. R., Santos, P., Coutinho, J., Öberg, S., Murin, L. I., Falster, R., Binns, J., Monakhov, E. V., and Svensson, B. G. Tue . "Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon". Germany. doi:10.1002/pssr.201700133.
@article{osti_1375535,
title = {Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon},
author = {Vaqueiro-Contreras, M. and Markevich, V. P. and Halsall, M. P. and Peaker, A. R. and Santos, P. and Coutinho, J. and Öberg, S. and Murin, L. I. and Falster, R. and Binns, J. and Monakhov, E. V. and Svensson, B. G.},
abstractNote = {},
doi = {10.1002/pssr.201700133},
journal = {Physica Status Solidi rrl},
number = 8,
volume = 11,
place = {Germany},
year = {2017},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/pssr.201700133

Citation Metrics:
Cited by: 4 works
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