DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Stranski–Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells

Authors:
 [1]; ORCiD logo [2];  [2]; ORCiD logo [1];  [1];  [3];  [3]
  1. Division of Metrology for Future Technology, Korea Research Institute of Standards and Science, Daejeon 305-340, South Korea
  2. Department of Physics, Kangwon National University, Kangwon-Do 200-701, South Korea
  3. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1375503
Grant/Contract Number:  
EEC-1041895
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 7; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Kim, Yeongho, Cho, Il-Wook, Ryu, Mee-Yi, Kim, Jun Oh, Lee, Sang Jun, Ban, Keun-Yong, and Honsberg, Christiana B. Stranski–Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells. United States: N. p., 2017. Web. doi:10.1063/1.4999437.
Kim, Yeongho, Cho, Il-Wook, Ryu, Mee-Yi, Kim, Jun Oh, Lee, Sang Jun, Ban, Keun-Yong, & Honsberg, Christiana B. Stranski–Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells. United States. https://doi.org/10.1063/1.4999437
Kim, Yeongho, Cho, Il-Wook, Ryu, Mee-Yi, Kim, Jun Oh, Lee, Sang Jun, Ban, Keun-Yong, and Honsberg, Christiana B. Mon . "Stranski–Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells". United States. https://doi.org/10.1063/1.4999437.
@article{osti_1375503,
title = {Stranski–Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells},
author = {Kim, Yeongho and Cho, Il-Wook and Ryu, Mee-Yi and Kim, Jun Oh and Lee, Sang Jun and Ban, Keun-Yong and Honsberg, Christiana B.},
abstractNote = {},
doi = {10.1063/1.4999437},
journal = {Applied Physics Letters},
number = 7,
volume = 111,
place = {United States},
year = {Mon Aug 14 00:00:00 EDT 2017},
month = {Mon Aug 14 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.4999437

Citation Metrics:
Cited by: 20 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots
journal, June 2003

  • Xu, Zhangcheng; Birkedal, Dan; Hvam, Jørn M.
  • Applied Physics Letters, Vol. 82, Issue 22
  • DOI: 10.1063/1.1581005

Capping process of InAs∕GaAs quantum dots studied by cross-sectional scanning tunneling microscopy
journal, December 2004

  • Gong, Q.; Offermans, P.; Nötzel, R.
  • Applied Physics Letters, Vol. 85, Issue 23
  • DOI: 10.1063/1.1831564

Carrier dynamics in type-II GaAsSb/GaAs quantum wells
journal, April 2012


Self-assembled InAs/GaAs quantum dots studied with excitation dependent cathodoluminescence
journal, September 1998

  • Tang, Y.; Rich, D. H.; Mukhametzhanov, I.
  • Journal of Applied Physics, Vol. 84, Issue 6
  • DOI: 10.1063/1.368490

Quantum dot strain engineering of InAs∕InGaAs nanostructures
journal, January 2007

  • Seravalli, L.; Minelli, M.; Frigeri, P.
  • Journal of Applied Physics, Vol. 101, Issue 2
  • DOI: 10.1063/1.2424523

Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell
journal, September 2010

  • Antolín, E.; Martí, A.; Farmer, C. D.
  • Journal of Applied Physics, Vol. 108, Issue 6
  • DOI: 10.1063/1.3468520

Phonon broadening of excitons in GaAs/ Al x Ga 1 x As quantum wells
journal, June 1995


Submonolayer quantum dot infrared photodetector
journal, March 2009

  • Ting, David Z. -Y.; Bandara, Sumith V.; Gunapala, Sarath D.
  • Applied Physics Letters, Vol. 94, Issue 11
  • DOI: 10.1063/1.3095812

Model for intermediate band solar cells incorporating carrier transport and recombination
journal, March 2009

  • Lin, Albert S.; Wang, Weiming; Phillips, Jamie D.
  • Journal of Applied Physics, Vol. 105, Issue 6
  • DOI: 10.1063/1.3093962

Properties of photoluminescence in type-II GaAsSb/GaAs multiple quantum wells
journal, November 2002

  • Chiu, Y. S.; Ya, M. H.; Su, W. S.
  • Journal of Applied Physics, Vol. 92, Issue 10
  • DOI: 10.1063/1.1513200

Many-body effects on modulation-doped InAs/GaAs quantum dots
journal, May 1997

  • Lee, Joo In; Lee, Hyung Gyoo; Shin, Eun-joo
  • Applied Physics Letters, Vol. 70, Issue 21
  • DOI: 10.1063/1.119031

Carrier relaxation and electronic structure in InAs self-assembled quantum dots
journal, October 1996


Absorption, carrier lifetime, and gain in inas~gaas quantum-dot infrared photodetectors
journal, March 2003

  • Kochman, B.; Stiff-Roberts, A. D.; Chakrabarti, S.
  • IEEE Journal of Quantum Electronics, Vol. 39, Issue 3
  • DOI: 10.1109/JQE.2002.808169

Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices
journal, February 2001


Impact of size, shape, and composition on piezoelectric effects and electronic properties of In ( Ga ) As Ga As quantum dots
journal, November 2007


Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs
journal, October 2010

  • Lenz, Andrea; Eisele, Holger; Becker, Jonas
  • Applied Physics Express, Vol. 3, Issue 10
  • DOI: 10.1143/APEX.3.105602

Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering
journal, January 1999

  • Colocci, M.; Vinattieri, A.; Lippi, L.
  • Applied Physics Letters, Vol. 74, Issue 4
  • DOI: 10.1063/1.123146

Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors
journal, January 2013

  • Kim, J. O.; Sengupta, S.; Barve, A. V.
  • Applied Physics Letters, Vol. 102, Issue 1
  • DOI: 10.1063/1.4774383

Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy
journal, July 2016

  • Gao, Xian; Wei, Zhipeng; Zhao, Fenghuan
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep29112