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Title: An all-perovskite p-n junction based on transparent conducting p-La1-xSrxCrO3 epitaxial layers

Journal Article · · Applied Physics Letters
DOI: https://doi.org/10.1063/1.4997410 · OSTI ID:1375367

Transparent, conducting p-La1-xSrxCrO3 epitaxial layers were deposited on Nb-doped SrTiO3(001) by oxygen-assisted molecular beam epitaxy to form structurally coherent p-n junctions. X-ray photoelectron spectroscopy reveals a type II or “staggered” band alignment, with valence and conduction band offsets of 2.0 eV and 0.9 eV, respectively. Diodes fabricated from these heterojunctions exhibit rectifying behavior, and the I-V characteristics are different from those for traditional semiconductor p-n junctions. A rather large ideality factor is ascribed to the complex nature of the interface.

Research Organization:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC05-76RL01830
OSTI ID:
1375367
Alternate ID(s):
OSTI ID: 1374210
Report Number(s):
PNNL-SA--124623; 49306; KC0203020
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 111; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (1)

Poisson ratio and bulk lattice constant of (Sr 0.25 La 0.75 )CrO 3 from strained epitaxial thin films journal August 2019