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Title: Valence-band offsets of CoTiSb/In 0.53Ga 0.47As and CoTiSb/In 0.52Al 0.48As heterojunctions

The valence-band offsets, ΔE v, between semiconducting half-Heusler compound CoTiSb and lattice-matched III-V In 0.53Ga 0.47As and In 0.52Al 0.48As heterojunction interfaces have been measured using X-ray photoemission spectroscopy (XPS). These interfaces were formed using molecular beam epitaxy and transferred in situ for XPS measurements. Valence-band offsets of 0.30 eV and 0.58 eV were measured for CoTiSb/In 0.53Ga 0.47As and CoTiSb/In 0.52Al 0.48As, respectively. By combining these measurements with previously reported XPS ΔE v (In 0.53Ga 0.47As/In 0.52Al 0.48As) data, the results suggest that band offset transitivity is satisfied. In addition, the film growth order of the interface between CoTiSb and In 0.53Ga 0.47As is explored and does not seem to affect the band offsets. Finally, the band alignments of CoTiSb with GaAs, AlAs, and InAs are calculated using the density function theory with the HSE06 hybrid functional and applied to predict the band alignment of CoTiSb with In 0.53Ga 0.47As and In 0.52Al 0.48As. As a result, good agreement is found between the calculated valence-band offsets and those determined from XPS.
Authors:
ORCiD logo [1] ;  [2] ; ORCiD logo [1] ; ORCiD logo [1] ;  [1] ; ORCiD logo [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [1]
  1. Univ. of California, Santa Barbara, CA (United States)
  2. Univ. of Delaware, Newark, DE (United States)
Publication Date:
Grant/Contract Number:
SC0014388; ACI-1053575
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 6; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 97 MATHEMATICS AND COMPUTING; Band structure; Heterojunction; X-ray photoelectron spectroscopy; Semiconductor device fabrication; Epitaxy
OSTI Identifier:
1375020
Alternate Identifier(s):
OSTI ID: 1374777

Harrington, S. D., Sharan, A., Rice, A. D., Logan, J. A., McFadden, A. P., Pendharkar, M., Pennachio, D. J., Wilson, N. S., Gui, Z., Janotti, A., and Palmstrom, C. J.. Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions. United States: N. p., Web. doi:10.1063/1.4985200.
Harrington, S. D., Sharan, A., Rice, A. D., Logan, J. A., McFadden, A. P., Pendharkar, M., Pennachio, D. J., Wilson, N. S., Gui, Z., Janotti, A., & Palmstrom, C. J.. Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions. United States. doi:10.1063/1.4985200.
Harrington, S. D., Sharan, A., Rice, A. D., Logan, J. A., McFadden, A. P., Pendharkar, M., Pennachio, D. J., Wilson, N. S., Gui, Z., Janotti, A., and Palmstrom, C. J.. 2017. "Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions". United States. doi:10.1063/1.4985200. https://www.osti.gov/servlets/purl/1375020.
@article{osti_1375020,
title = {Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions},
author = {Harrington, S. D. and Sharan, A. and Rice, A. D. and Logan, J. A. and McFadden, A. P. and Pendharkar, M. and Pennachio, D. J. and Wilson, N. S. and Gui, Z. and Janotti, A. and Palmstrom, C. J.},
abstractNote = {The valence-band offsets, ΔEv, between semiconducting half-Heusler compound CoTiSb and lattice-matched III-V In0.53Ga0.47As and In0.52Al0.48As heterojunction interfaces have been measured using X-ray photoemission spectroscopy (XPS). These interfaces were formed using molecular beam epitaxy and transferred in situ for XPS measurements. Valence-band offsets of 0.30 eV and 0.58 eV were measured for CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As, respectively. By combining these measurements with previously reported XPS ΔEv (In0.53Ga0.47As/In0.52Al0.48As) data, the results suggest that band offset transitivity is satisfied. In addition, the film growth order of the interface between CoTiSb and In0.53Ga0.47As is explored and does not seem to affect the band offsets. Finally, the band alignments of CoTiSb with GaAs, AlAs, and InAs are calculated using the density function theory with the HSE06 hybrid functional and applied to predict the band alignment of CoTiSb with In0.53Ga0.47As and In0.52Al0.48As. As a result, good agreement is found between the calculated valence-band offsets and those determined from XPS.},
doi = {10.1063/1.4985200},
journal = {Applied Physics Letters},
number = 6,
volume = 111,
place = {United States},
year = {2017},
month = {8}
}

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