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Title: Self-Tuning n-Type Bi2(Te,Se)3/SiC Thermoelectric Nanocomposites to Realize High Performances up to 300 °C

Abstract

Bi2Te3 thermoelectric materials are utilized for refrigeration for decades, while their application of energy harvesting requires stable thermoelectric and mechanical performances at elevated temperatures. This work reveals that a steady zT of ≈0.85 at 200 to 300 °C can be achieved by doping small amounts of copper iodide (CuI) in Bi2Te2.2Se0.8–silicon carbide (SiC) composites, where SiC nanodispersion enhances the flexural strength. It is found that CuI plays two important roles with atomic Cu/I dopants and CuI precipitates. The Cu/I dopants show a self–tuning behavior due to increasing solubility with increasing temperatures. The increased doping concentration increases electrical conductivity at high temperatures and effectively suppresses the intrinsic excitation. In addition, a large reduction of lattice thermal conductivity is achieved due to the “in situ” CuI nanoprecipitates acting as phonon–scattering centers. Furthermore over 60% reduction of bipolar thermal conductivity is achieved, raising the maximum useful temperature of Bi2Te3 for substantially higher efficiency. For module applications, the reported materials are suitable for segmentation with a conventional ingot. This leads to high device ZT values of ≈0.9–1.0 and high efficiency up to 9.2% from 300 to 573 K, which can be of great significance for power generation from waste heat.

Authors:
 [1];  [2];  [3];  [3];  [2];  [2];  [3]
  1. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 P. R. China, Department of Materials Science and Engineering, Northwestern University, Evanston IL 60208 USA
  2. Department of Materials Science and Engineering, Northwestern University, Evanston IL 60208 USA
  3. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 P. R. China
Publication Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1374897
Alternate Identifier(s):
OSTI ID: 1401553; OSTI ID: 1499021
Grant/Contract Number:  
SC0001299; JCYJ 20150827165038323
Resource Type:
Published Article
Journal Name:
Advanced Science
Additional Journal Information:
Journal Name: Advanced Science; Journal ID: ISSN 2198-3844
Publisher:
Wiley
Country of Publication:
Germany
Language:
English
Subject:
36 MATERIALS SCIENCE; bismuth-telluride-selenide; device figure of merit; self-tuning; thermoelectrics

Citation Formats

Pan, Yu, Aydemir, Umut, Sun, Fu-Hua, Wu, Chao-Feng, Chasapis, Thomas C., Snyder, G. Jeffrey, and Li, Jing-Feng. Self-Tuning n-Type Bi2(Te,Se)3/SiC Thermoelectric Nanocomposites to Realize High Performances up to 300 °C. Germany: N. p., 2017. Web. doi:10.1002/advs.201700259.
Pan, Yu, Aydemir, Umut, Sun, Fu-Hua, Wu, Chao-Feng, Chasapis, Thomas C., Snyder, G. Jeffrey, & Li, Jing-Feng. Self-Tuning n-Type Bi2(Te,Se)3/SiC Thermoelectric Nanocomposites to Realize High Performances up to 300 °C. Germany. doi:10.1002/advs.201700259.
Pan, Yu, Aydemir, Umut, Sun, Fu-Hua, Wu, Chao-Feng, Chasapis, Thomas C., Snyder, G. Jeffrey, and Li, Jing-Feng. Fri . "Self-Tuning n-Type Bi2(Te,Se)3/SiC Thermoelectric Nanocomposites to Realize High Performances up to 300 °C". Germany. doi:10.1002/advs.201700259.
@article{osti_1374897,
title = {Self-Tuning n-Type Bi2(Te,Se)3/SiC Thermoelectric Nanocomposites to Realize High Performances up to 300 °C},
author = {Pan, Yu and Aydemir, Umut and Sun, Fu-Hua and Wu, Chao-Feng and Chasapis, Thomas C. and Snyder, G. Jeffrey and Li, Jing-Feng},
abstractNote = {Bi2Te3 thermoelectric materials are utilized for refrigeration for decades, while their application of energy harvesting requires stable thermoelectric and mechanical performances at elevated temperatures. This work reveals that a steady zT of ≈0.85 at 200 to 300 °C can be achieved by doping small amounts of copper iodide (CuI) in Bi2Te2.2Se0.8–silicon carbide (SiC) composites, where SiC nanodispersion enhances the flexural strength. It is found that CuI plays two important roles with atomic Cu/I dopants and CuI precipitates. The Cu/I dopants show a self–tuning behavior due to increasing solubility with increasing temperatures. The increased doping concentration increases electrical conductivity at high temperatures and effectively suppresses the intrinsic excitation. In addition, a large reduction of lattice thermal conductivity is achieved due to the “in situ” CuI nanoprecipitates acting as phonon–scattering centers. Furthermore over 60% reduction of bipolar thermal conductivity is achieved, raising the maximum useful temperature of Bi2Te3 for substantially higher efficiency. For module applications, the reported materials are suitable for segmentation with a conventional ingot. This leads to high device ZT values of ≈0.9–1.0 and high efficiency up to 9.2% from 300 to 573 K, which can be of great significance for power generation from waste heat.},
doi = {10.1002/advs.201700259},
journal = {Advanced Science},
number = ,
volume = ,
place = {Germany},
year = {2017},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/advs.201700259

Citation Metrics:
Cited by: 4 works
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Figures / Tables:

Figure 1 Figure 1: Mechanical properties of Bi2(Te,Se)3–x vol% SiC samples, with a summary of our previous works,[23,24] where Hv is the Vickers hardness and KIC is the fracture toughness.

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    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.