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Title: Bending strain engineering in quantum spin hall system for controlling spin currents

Abstract

Quantum spin Hall system can exhibit exotic spin transport phenomena, mediated by its topological edge states. The concept of bending strain engineering to tune the spin transport properties of a quantum spin Hall system is demonstrated. Here, we show that bending strain can be used to control the spin orientation of counter-propagating edge states of a quantum spin system to generate a non-zero spin current. This physics mechanism can be applied to effectively tune the spin current and pure spin current decoupled from charge current in a quantum spin Hall system by control of its bending curvature. Moreover, the curved quantum spin Hall system can be achieved by the concept of topological nanomechanical architecture in a controllable way, as demonstrated by the material example of Bi/Cl/Si(111) nanofilm. This concept of bending strain engineering of spins via topological nanomechanical architecture affords a promising route towards the realization of topological nano-mechanospintronics.

Authors:
 [1];  [2];  [2];  [3];  [4];  [5]
  1. Beijing Computational Science Research Center (China)
  2. Univ. of Utah, Salt Lake City, UT (United States). Dept. of Materials Science and Engineering
  3. Zhejiang Normal Univ., Jinhua (China). Dept. of Physics
  4. Beijing Computational Science Research Center (China); Univ. of Utah, Salt Lake City, UT (United States). Dept. of Materials Science and Engineering
  5. Univ. of Utah, Salt Lake City, UT (United States). Dept. of Materials Science and Engineering; Collaborative Innovation Center of Quantum Matter, Beijing (China)
Publication Date:
Research Org.:
Univ. of Utah, Salt Lake City, UT (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1374557
Grant/Contract Number:  
FG02-04ER46148
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 8; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; electronic properties and materials; electronic structure; spintronics; topological insulators

Citation Formats

Huang, Bing, Jin, Kyung-Hwan, Cui, Bin, Zhai, Feng, Mei, Jiawei, and Liu, Feng. Bending strain engineering in quantum spin hall system for controlling spin currents. United States: N. p., 2017. Web. doi:10.1038/ncomms15850.
Huang, Bing, Jin, Kyung-Hwan, Cui, Bin, Zhai, Feng, Mei, Jiawei, & Liu, Feng. Bending strain engineering in quantum spin hall system for controlling spin currents. United States. doi:10.1038/ncomms15850.
Huang, Bing, Jin, Kyung-Hwan, Cui, Bin, Zhai, Feng, Mei, Jiawei, and Liu, Feng. Fri . "Bending strain engineering in quantum spin hall system for controlling spin currents". United States. doi:10.1038/ncomms15850. https://www.osti.gov/servlets/purl/1374557.
@article{osti_1374557,
title = {Bending strain engineering in quantum spin hall system for controlling spin currents},
author = {Huang, Bing and Jin, Kyung-Hwan and Cui, Bin and Zhai, Feng and Mei, Jiawei and Liu, Feng},
abstractNote = {Quantum spin Hall system can exhibit exotic spin transport phenomena, mediated by its topological edge states. The concept of bending strain engineering to tune the spin transport properties of a quantum spin Hall system is demonstrated. Here, we show that bending strain can be used to control the spin orientation of counter-propagating edge states of a quantum spin system to generate a non-zero spin current. This physics mechanism can be applied to effectively tune the spin current and pure spin current decoupled from charge current in a quantum spin Hall system by control of its bending curvature. Moreover, the curved quantum spin Hall system can be achieved by the concept of topological nanomechanical architecture in a controllable way, as demonstrated by the material example of Bi/Cl/Si(111) nanofilm. This concept of bending strain engineering of spins via topological nanomechanical architecture affords a promising route towards the realization of topological nano-mechanospintronics.},
doi = {10.1038/ncomms15850},
journal = {Nature Communications},
number = ,
volume = 8,
place = {United States},
year = {2017},
month = {6}
}

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