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Title: Approaching the intrinsic photoluminescence linewidth in transition metal dichalcogenide monolayers

Excitonic states in monolayer transition metal dichalcogenides (TMDCs) have been the subject of extensive recent interest. Their intrinsic properties can, however, be obscured due to the influence of inhomogeneity in the external environment. Here we report methods for fabricating high quality TMDC monolayers with narrow photoluminescence (PL) linewidth approaching the intrinsic limit. We find that encapsulation in hexagonal boron nitride (h-BN) sharply reduces the PL linewidth, and that passivation of the oxide substrate by an alkyl monolayer further decreases the linewidth and also minimizes the charged exciton (trion) peak. The combination of these sample preparation methods results in much reduced spatial variation in the PL emission, with a full-width-at-half-maximum as low as 1.7 meV. Furthermore, analysis of the PL line shape yields a homogeneous width of 1.43 ± 0.08 meV and inhomogeneous broadening of 1.1 ± 0.3 meV.
 [1] ;  [1] ;  [2] ;  [1] ;  [1] ;  [3] ;  [3] ;  [4] ;  [2] ;  [1] ;  [1]
  1. Columbia Univ., New York, NY (United States)
  2. Stevens Institute of Technology, Hoboken, NJ (United States)
  3. National Institute for Materials Science, Tsukuba (Japan)
  4. Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Grant/Contract Number:
AC02-76SF00515; DMR-1420634; ECCS-MRI-1531237; DMR-1608437; DMR-1506711
Accepted Manuscript
Journal Name:
2D Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 3; Journal ID: ISSN 2053-1583
IOP Publishing
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org:
Country of Publication:
United States
36 MATERIALS SCIENCE; transition metal dichalcogenides; photoluminescence; line width
OSTI Identifier: