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Title: Substrate preparation effects on defect density in molecular beam epitaxial growth of CdTe on CdTe (100) and (211)B

Recent studies have demonstrated that growth of CdTe on CdTe (100) and (211)B substrates via molecular beam epitaxy (MBE) results in planar defect densities 2 and 3 orders of magnitude higher than growth on InSb (100) substrates, respectively. To understand this shortcoming, MBE growth on CdTe substrates with a variety of substrate preparation methods is studied by scanning electron microscopy, secondary ion mass spectrometry, x-ray photoelectron spectroscopy, cross sectional transmission electron microscopy, and atom probe tomography (APT). Prior to growth, carbon is shown to remain on substrate surfaces even after atomic hydrogen cleaning. APT revealed that following the growth of films, trace amounts of carbon remained at the substrate/film interface. This residual carbon may lead to structural degradation, which was determined as the main cause of higher defect density.
Authors:
 [1] ;  [1] ;  [2] ;  [2] ;  [3] ;  [3] ;  [3] ;  [4] ;  [3] ;  [1]
  1. Colorado School of Mines, Golden, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Texas State Univ., San Marcos, TX (United States)
  4. EAG Lab., Sunnyvale, CA (United States)
Publication Date:
Report Number(s):
NREL/JA-5K00-69005
Journal ID: ISSN 2166-2746
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Volume: 35; Journal Issue: 4; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society/AIP
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S), SunShot Foundational Program to Advance Cell Efficiency (F-PACE II); USDOE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; semiconductors; epitaxy; thin film deposition; metalloids; materials treatment
OSTI Identifier:
1374257
Alternate Identifier(s):
OSTI ID: 1371509

Burton, George L., Diercks, David R., Perkins, Craig L., Barnes, Teresa M., Ogedengbe, Olanrewaju S., Jayathilaka, Pathiraja A., Edirisooriya, Madhavie, Wang, Alice, Myers, Thomas H., and Gorman, Brian P.. Substrate preparation effects on defect density in molecular beam epitaxial growth of CdTe on CdTe (100) and (211)B. United States: N. p., Web. doi:10.1116/1.4994553.
Burton, George L., Diercks, David R., Perkins, Craig L., Barnes, Teresa M., Ogedengbe, Olanrewaju S., Jayathilaka, Pathiraja A., Edirisooriya, Madhavie, Wang, Alice, Myers, Thomas H., & Gorman, Brian P.. Substrate preparation effects on defect density in molecular beam epitaxial growth of CdTe on CdTe (100) and (211)B. United States. doi:10.1116/1.4994553.
Burton, George L., Diercks, David R., Perkins, Craig L., Barnes, Teresa M., Ogedengbe, Olanrewaju S., Jayathilaka, Pathiraja A., Edirisooriya, Madhavie, Wang, Alice, Myers, Thomas H., and Gorman, Brian P.. 2017. "Substrate preparation effects on defect density in molecular beam epitaxial growth of CdTe on CdTe (100) and (211)B". United States. doi:10.1116/1.4994553. https://www.osti.gov/servlets/purl/1374257.
@article{osti_1374257,
title = {Substrate preparation effects on defect density in molecular beam epitaxial growth of CdTe on CdTe (100) and (211)B},
author = {Burton, George L. and Diercks, David R. and Perkins, Craig L. and Barnes, Teresa M. and Ogedengbe, Olanrewaju S. and Jayathilaka, Pathiraja A. and Edirisooriya, Madhavie and Wang, Alice and Myers, Thomas H. and Gorman, Brian P.},
abstractNote = {Recent studies have demonstrated that growth of CdTe on CdTe (100) and (211)B substrates via molecular beam epitaxy (MBE) results in planar defect densities 2 and 3 orders of magnitude higher than growth on InSb (100) substrates, respectively. To understand this shortcoming, MBE growth on CdTe substrates with a variety of substrate preparation methods is studied by scanning electron microscopy, secondary ion mass spectrometry, x-ray photoelectron spectroscopy, cross sectional transmission electron microscopy, and atom probe tomography (APT). Prior to growth, carbon is shown to remain on substrate surfaces even after atomic hydrogen cleaning. APT revealed that following the growth of films, trace amounts of carbon remained at the substrate/film interface. This residual carbon may lead to structural degradation, which was determined as the main cause of higher defect density.},
doi = {10.1116/1.4994553},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
number = 4,
volume = 35,
place = {United States},
year = {2017},
month = {7}
}