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Title: Characterization of Primary Carrier Transport Properties of the Light-Harvesting Chalcopyrite Semiconductors CuIn(S1–xSex)2

Journal Article · · Journal of Physical Chemistry. C

We report the carrier transport properties of CuIn(S1–xSex)2 (0 ≤ x ≤ 1), a promising chalcopyrite semiconductor series for solar water splitting. A low concentration Mg dopant is used to decrease the carrier resistivity through facilitating bulk p-type transport at ambient temperature. Temperature-dependent resistivity measurements reveal a four-order magnitude decrease in bulk electrical resistivity (from 103 to 10–1 Ohm cm) for 1% Mg-doped CuIn(S1–xSex)2 as x increases from 0 to 1. Hall effect measurements at room temperature reveal p-type majority carrier concentrations that vary from 1015 to 1018 cm–3 and mobilities of approximately 1–10 cm2 V–1 s–1. These results provide insights into the fundamental carrier transport properties of CuIn(S1–xSex)2 and will be of value in optimizing these materials further for photoelectrochemistry applications.

Research Organization:
Princeton Univ., NJ (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0002133; AC02-05CH11231; F602-98ER45706
OSTI ID:
1374233
Alternate ID(s):
OSTI ID: 1508132
Journal Information:
Journal of Physical Chemistry. C, Vol. 121, Issue 32; ISSN 1932-7447
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

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