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Title: Characterization of Primary Carrier Transport Properties of the Light-Harvesting Chalcopyrite Semiconductors CuIn(S 1–xSe x) 2

We report the carrier transport properties of CuIn(S 1-xSe x) 2 (0 ≤ x ≤ 1), a promising chalcopyrite semiconductor series for solar water splitting. A low concentration Mg dopant is used to decrease the carrier resistivity through facilitating bulk p-type transport at ambient temperature. Temperature-dependent resistivity measurements reveal a four-order magnitude decrease in bulk electrical resistivity (from 10 3 to 10 –1 Ohm cm) for 1% Mg-doped CuIn(S 1–xSe x) 2 as x increases from 0 to 1. Hall effect measurements at room temperature reveal p-type majority carrier concentrations that vary from 10 15 to 10 18 cm –3 and mobilities of approximately 1–10 cm 2 V –1 s –1. These results provide insights into the fundamental carrier transport properties of CuIn(S 1–xSe x) 2 and will be of value in optimizing these materials further for photoelectrochemistry applications.
Authors:
 [1] ;  [1] ;  [1] ; ORCiD logo [1]
  1. Princeton Univ., NJ (United States). Dept. of Chemistry
Publication Date:
Grant/Contract Number:
SC0002133; AC02-05CH11231; F602-98ER45706
Type:
Published Article
Journal Name:
Journal of Physical Chemistry. C
Additional Journal Information:
Journal Volume: 121; Journal Issue: 32; Journal ID: ISSN 1932-7447
Publisher:
American Chemical Society
Research Org:
Princeton Univ., NJ (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 30 DIRECT ENERGY CONVERSION; p-type semiconductors; photoelectrochemistry; chalcopyrites; hydrogen from water
OSTI Identifier:
1374233
Alternate Identifier(s):
OSTI ID: 1418173

Frick, Jessica J., Kushwaha, Satya K., Cava, Robert J., and Bocarsly, Andrew B.. Characterization of Primary Carrier Transport Properties of the Light-Harvesting Chalcopyrite Semiconductors CuIn(S1–xSex)2. United States: N. p., Web. doi:10.1021/acs.jpcc.7b03152.
Frick, Jessica J., Kushwaha, Satya K., Cava, Robert J., & Bocarsly, Andrew B.. Characterization of Primary Carrier Transport Properties of the Light-Harvesting Chalcopyrite Semiconductors CuIn(S1–xSex)2. United States. doi:10.1021/acs.jpcc.7b03152.
Frick, Jessica J., Kushwaha, Satya K., Cava, Robert J., and Bocarsly, Andrew B.. 2017. "Characterization of Primary Carrier Transport Properties of the Light-Harvesting Chalcopyrite Semiconductors CuIn(S1–xSex)2". United States. doi:10.1021/acs.jpcc.7b03152.
@article{osti_1374233,
title = {Characterization of Primary Carrier Transport Properties of the Light-Harvesting Chalcopyrite Semiconductors CuIn(S1–xSex)2},
author = {Frick, Jessica J. and Kushwaha, Satya K. and Cava, Robert J. and Bocarsly, Andrew B.},
abstractNote = {We report the carrier transport properties of CuIn(S1-xSex)2 (0 ≤ x ≤ 1), a promising chalcopyrite semiconductor series for solar water splitting. A low concentration Mg dopant is used to decrease the carrier resistivity through facilitating bulk p-type transport at ambient temperature. Temperature-dependent resistivity measurements reveal a four-order magnitude decrease in bulk electrical resistivity (from 103 to 10–1 Ohm cm) for 1% Mg-doped CuIn(S1–xSex)2 as x increases from 0 to 1. Hall effect measurements at room temperature reveal p-type majority carrier concentrations that vary from 1015 to 1018 cm–3 and mobilities of approximately 1–10 cm2 V–1 s–1. These results provide insights into the fundamental carrier transport properties of CuIn(S1–xSex)2 and will be of value in optimizing these materials further for photoelectrochemistry applications.},
doi = {10.1021/acs.jpcc.7b03152},
journal = {Journal of Physical Chemistry. C},
number = 32,
volume = 121,
place = {United States},
year = {2017},
month = {7}
}