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Title: Recordings and Analysis of Atomic Ledge and Dislocation Movements in InGaAs to Nickelide Nanowire Phase Transformation

ORCiD logo [1];  [2]
  1. Department of Electrical and Computer Engineering, University of California San Diego, La Jolla CA 92093 USA
  2. Department of Electrical and Computer Engineering, Materials Science and Engineering Program, Department of NanoEngineering, University of California San Diego, La Jolla CA 92093 USA
Publication Date:
Sponsoring Org.:
OSTI Identifier:
Grant/Contract Number:  
AC52-06NA25396; AC04-94AL85000
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Additional Journal Information:
Journal Name: Small Journal Volume: 13 Journal Issue: 30; Journal ID: ISSN 1613-6810
Wiley Blackwell (John Wiley & Sons)
Country of Publication:

Citation Formats

Chen, Renjie, and Dayeh, Shadi A. Recordings and Analysis of Atomic Ledge and Dislocation Movements in InGaAs to Nickelide Nanowire Phase Transformation. Germany: N. p., 2017. Web. doi:10.1002/smll.201604117.
Chen, Renjie, & Dayeh, Shadi A. Recordings and Analysis of Atomic Ledge and Dislocation Movements in InGaAs to Nickelide Nanowire Phase Transformation. Germany. doi:10.1002/smll.201604117.
Chen, Renjie, and Dayeh, Shadi A. Thu . "Recordings and Analysis of Atomic Ledge and Dislocation Movements in InGaAs to Nickelide Nanowire Phase Transformation". Germany. doi:10.1002/smll.201604117.
title = {Recordings and Analysis of Atomic Ledge and Dislocation Movements in InGaAs to Nickelide Nanowire Phase Transformation},
author = {Chen, Renjie and Dayeh, Shadi A.},
abstractNote = {},
doi = {10.1002/smll.201604117},
journal = {Small},
number = 30,
volume = 13,
place = {Germany},
year = {2017},
month = {6}

Journal Article:
Free Publicly Available Full Text
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DOI: 10.1002/smll.201604117

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Works referenced in this record:

Directed Assembly of One-Dimensional Nanostructures into Functional Networks
journal, January 2001

Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures
journal, July 2004

  • Wu, Yue; Xiang, Jie; Yang, Chen
  • Nature, Vol. 430, Issue 6995, p. 61-65
  • DOI: 10.1038/nature02674

Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n + -In 0.53 Ga 0.47 As
journal, October 2014

  • Abraham, Michael; Yu, Shih-Ying; Choi, Won Hyuck
  • Journal of Applied Physics, Vol. 116, Issue 16
  • DOI: 10.1063/1.4900535

Frontiers of in situ electron microscopy
journal, January 2015

  • Zheng, Haimei; Meng, Ying Shirley; Zhu, Yimei
  • MRS Bulletin, Vol. 40, Issue 1
  • DOI: 10.1557/mrs.2014.305

Homogeneous Nucleation of Epitaxial CoSi 2 and NiSi in Si Nanowires
journal, June 2009

  • Chou, Yi-Chia; Wu, Wen-Wei; Chen, Lih-Juann
  • Nano Letters, Vol. 9, Issue 6
  • DOI: 10.1021/nl900779j

Crystal structure and epitaxial relationship of Ni 4 InGaAs 2 films formed on InGaAs by annealing
journal, January 2013

  • Ivana, ; Lim Foo, Yong; Zhang, Xingui
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 31, Issue 1
  • DOI: 10.1116/1.4769266

A Self-Aligned Ni-InGaAs Contact Technology for InGaAs Channel n-MOSFETs
journal, January 2012

  • Zhang, Xingui; Guo, Hua Xin
  • Journal of The Electrochemical Society, Vol. 159, Issue 5
  • DOI: 10.1149/2.060205jes

Complete Replacement of Metal in Metal Oxide Nanowires via Atomic Diffusion: In/ZnO Case Study
journal, May 2014

  • Wang, Shau-Chieh; Lu, Ming-Yen; Manekkathodi, Afsal
  • Nano Letters, Vol. 14, Issue 6
  • DOI: 10.1021/nl5006228

Ledges and dislocations in phase transformations
journal, September 1994

  • Hirth, J. P.
  • Metallurgical and Materials Transactions A, Vol. 25, Issue 9
  • DOI: 10.1007/BF02649036

Silicon Device Scaling to the Sub-10-nm Regime
journal, December 2004

  • Ieong, Meikei; Doris, Bruce; Kedzierski, Jakub
  • Science, Vol. 306, Issue 5704, p. 2057-2060
  • DOI: 10.1126/science.1100731

High Electron Mobility InAs Nanowire Field-Effect Transistors
journal, February 2007

Gold Catalyzed Nickel Disilicide Formation: A New Solid–Liquid–Solid Phase Growth Mechanism
journal, November 2013

  • Tang, Wei; Picraux, S. Tom; Huang, Jian Yu
  • Nano Letters, Vol. 13, Issue 12
  • DOI: 10.1021/nl4032023

Dynamic Process of Phase Transition from Wurtzite to Zinc Blende Structure in InAs Nanowires
journal, November 2013

  • Zheng, He; Wang, Jian; Huang, Jian Yu
  • Nano Letters, Vol. 13, Issue 12
  • DOI: 10.1021/nl403240r

Phase diagrams of InGaAsP, InGaAs and InP lattice-matched to (100)InP
journal, August 1984

Synthesis of nanostructures in nanowires using sequential catalyst reactions
journal, July 2015

  • Panciera, F.; Chou, Y. -C.; Reuter, M. C.
  • Nature Materials, Vol. 14, Issue 8
  • DOI: 10.1038/nmat4352

Ultrashort Channel Silicon Nanowire Transistors with Nickel Silicide Source/Drain Contacts
journal, July 2012

  • Tang, Wei; Dayeh, Shadi A.; Picraux, S. Tom
  • Nano Letters, Vol. 12, Issue 8
  • DOI: 10.1021/nl3011676

Field Dependent Transport Properties in InAs Nanowire Field Effect Transistors
journal, October 2008

  • Dayeh, Shadi A.; Susac, Darija; Kavanagh, Karen L.
  • Nano Letters, Vol. 8, Issue 10
  • DOI: 10.1021/nl801256p

Growth and Stress-induced Transformation of Zinc blende AlN Layers in Al-AlN-TiN Multilayers
journal, December 2015

  • Li, Nan; Yadav, Satyesh K.; Wang, Jian
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep18554

Nanowire Photonic Circuit Elements
journal, October 2004

  • Barrelet, Carl J.; Greytak, Andrew B.; Lieber, Charles M.
  • Nano Letters, Vol. 4, Issue 10
  • DOI: 10.1021/nl048739k

In Situ Heating Transmission Electron Microscopy
journal, February 2008

  • Saka, Hiroyasu; Kamino, Takeo; Ara, Shigeo
  • MRS Bulletin, Vol. 33, Issue 2
  • DOI: 10.1557/mrs2008.21

Kinetic Competition Model and Size-Dependent Phase Selection in 1-D Nanostructures
journal, May 2012

  • Chen, Yu; Lin, Yung-Chen; Huang, Chun-Wei
  • Nano Letters, Vol. 12, Issue 6
  • DOI: 10.1021/nl300990q

Heterogeneous and Homogeneous Nucleation of Epitaxial NiSi 2 in [110] Si Nanowires
journal, December 2010

  • Chou, Yi-Chia; Wu, Wen-Wei; Lee, Chung-Yang
  • The Journal of Physical Chemistry C, Vol. 115, Issue 2
  • DOI: 10.1021/jp108686y

Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
journal, January 2001

  • Duan, Xiangfeng; Huang, Yu; Cui, Yi
  • Nature, Vol. 409, Issue 6816, p. 66-69
  • DOI: 10.1038/35051047

Reaction of Ni film with In 0.53 Ga 0.47 As: Phase formation and texture
journal, October 2016

  • Zhiou, Seifeddine; Nguyen-Thanh, Tra; Rodriguez, Philippe
  • Journal of Applied Physics, Vol. 120, Issue 13
  • DOI: 10.1063/1.4963716

Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires
journal, March 2016

Metastable Growth of Pure Wurtzite InGaAs Microstructures
journal, July 2014

  • Ng, Kar Wei; Ko, Wai Son; Lu, Fanglu
  • Nano Letters, Vol. 14, Issue 8
  • DOI: 10.1021/nl501887f

Kinetic Manipulation of Silicide Phase Formation in Si Nanowire Templates
journal, July 2013

  • Chen, Yu; Lin, Yung-Chen; Zhong, Xing
  • Nano Letters, Vol. 13, Issue 8
  • DOI: 10.1021/nl401593f

CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
journal, August 2012

Dislocations, steps and disconnections at interfaces
journal, October 1994

Nucleation and Atomic Layer Reaction in Nickel Silicide for Defect-Engineered Si Nanochannels
journal, May 2013

  • Tang, Wei; Picraux, S. Tom; Huang, Jian Yu
  • Nano Letters, Vol. 13, Issue 6
  • DOI: 10.1021/nl400949n

Nanometre-scale electronics with III–V compound semiconductors
journal, November 2011

TEM Sample Preparation and FIB-Induced Damage
journal, May 2007

  • Mayer, Joachim; Giannuzzi, Lucille A.; Kamino, Takeo
  • MRS Bulletin, Vol. 32, Issue 5
  • DOI: 10.1557/mrs2007.63

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors
journal, November 2011

  • Ferain, Isabelle; Colinge, Cynthia A.; Colinge, Jean-Pierre
  • Nature, Vol. 479, Issue 7373
  • DOI: 10.1038/nature10676

In Situ TEM Observation of a Microcrucible Mechanism of Nanowire Growth
journal, May 2014

Solid-state reaction of nickel silicide and germanide contacts to semiconductor nanochannels
journal, April 2014

Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels
journal, March 2017

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
journal, January 2000

  • Chenming Hu, ; Bokor, J.
  • IEEE Transactions on Electron Devices, Vol. 47, Issue 12
  • DOI: 10.1109/16.887014

Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks
journal, February 2001

Epitaxial NiInGaAs formed by solid state reaction on In 0.53 Ga 0.47 As: Structural and chemical study
journal, May 2013

  • Shekhter, Pini; Mehari, Shlomo; Ritter, Dan
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 31, Issue 3
  • DOI: 10.1116/1.4802917

Calculation of the diameter-dependent polytypism in GaAs nanowires from an atomic motif expansion of the formation energy
journal, August 2011

Growth of nanowire superlattice structures for nanoscale photonics and electronics
journal, February 2002

  • Gudiksen, Mark S.; Lauhon, Lincoln J.; Wang, Jianfang
  • Nature, Vol. 415, Issue 6872, p. 617-620
  • DOI: 10.1038/415617a

Novel Heterogeneous Integration Technology of III-V Layers and InGaAs FinFETs to Silicon
journal, April 2014

  • Dai, Xing; Nguyen, Binh-Minh; Hwang, Yoontae
  • Advanced Functional Materials, Vol. 24, Issue 28
  • DOI: 10.1002/adfm.201400105

Step-Flow Kinetics in Nanowire Growth
journal, November 2010

InGaAs surface preparation for atomic layer deposition by hydrogen cleaning and improvement with high temperature anneal
journal, July 2011

  • Melitz, Wilhelm; Shen, Jian; Kent, Tyler
  • Journal of Applied Physics, Vol. 110, Issue 1
  • DOI: 10.1063/1.3597791

Logic Gates and Computation from Assembled Nanowire Building Blocks
journal, November 2001

Electrical contacts to one- and two-dimensional nanomaterials
journal, November 2011

The motion of multiple height ledges and disconnections in phase transformations
journal, August 1998

  • Hirth, J. P.; Hoagland, R. G.; Kurtz, R. J.
  • Metallurgical and Materials Transactions A, Vol. 29, Issue 8
  • DOI: 10.1007/s11661-998-0029-x

Step-Flow Kinetics Model for the Vapor–Solid–Solid Si Nanowires Growth
journal, April 2015

Nanowire photonics
journal, October 2009

In Situ Heat-Induced Replacement of GaAs Nanowires by Au
journal, April 2016

Ledge-flow-controlled catalyst interface dynamics during Si nanowire growth
journal, March 2008

  • Hofmann, Stephan; Sharma, Renu; Wirth, Christoph T.
  • Nature Materials, Vol. 7, Issue 5
  • DOI: 10.1038/nmat2140

Formation of Ni 3 InGaAs phase in Ni/InGaAs contact at low temperature
journal, September 2016

  • Perrin, C.; Ghegin, E.; Zhiou, S.
  • Applied Physics Letters, Vol. 109, Issue 13
  • DOI: 10.1063/1.4963132

Advances in the synthesis of InAs and GaAs nanowires for electronic applications
journal, August 2009

Metallic, magnetic and molecular nanocontacts
journal, June 2016

  • Requist, Ryan; Baruselli, Pier Paolo; Smogunov, Alexander
  • Nature Nanotechnology, Vol. 11, Issue 6
  • DOI: 10.1038/nnano.2016.55

Lattice and grain boundary self‐diffusion in Ni 2 Si: Comparison with thin‐film formation
journal, April 1990

  • Ciccariello, J. C.; Poize, S.; Gas, P.
  • Journal of Applied Physics, Vol. 67, Issue 7
  • DOI: 10.1063/1.345367

In Situ Observation on Dislocation-Controlled Sublimation of Mg Nanoparticles
journal, January 2016

Al passivation effect at the HfO 2 /GaAs interface: A first-principles study
journal, January 2016