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Title: Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1];  [2];  [3];  [3];  [3];  [2];  [4]
  1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
  2. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
  3. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
  4. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA, Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1373620
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 5; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Johnson, Jared M., Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, and Rajan, Siddharth. Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs. United States: N. p., 2017. Web. doi:10.1063/1.4997328.
Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Johnson, Jared M., Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, & Rajan, Siddharth. Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs. United States. doi:10.1063/1.4997328.
Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Johnson, Jared M., Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, and Rajan, Siddharth. Mon . "Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs". United States. doi:10.1063/1.4997328.
@article{osti_1373620,
title = {Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs},
author = {Zhang, Yuewei and Krishnamoorthy, Sriram and Akyol, Fatih and Johnson, Jared M. and Allerman, Andrew A. and Moseley, Michael W. and Armstrong, Andrew M. and Hwang, Jinwoo and Rajan, Siddharth},
abstractNote = {},
doi = {10.1063/1.4997328},
journal = {Applied Physics Letters},
number = 5,
volume = 111,
place = {United States},
year = {2017},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4997328

Citation Metrics:
Cited by: 6 works
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Works referenced in this record:

Low resistance GaN/InGaN/GaN tunnel junctions
journal, March 2013

  • Krishnamoorthy, Sriram; Akyol, Fatih; Park, Pil Sung
  • Applied Physics Letters, Vol. 102, Issue 11
  • DOI: 10.1063/1.4796041

Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures
journal, July 2009


High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure
journal, July 2016

  • Rong, Xin; Wang, Xinqiang; Ivanov, Sergey V.
  • Advanced Materials, Vol. 28, Issue 36
  • DOI: 10.1002/adma.201600990

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures
journal, December 2009


High-power UV-B LEDs with long lifetime
conference, March 2015

  • Rass, Jens; Kolbe, Tim; Lobo-Ploch, Neysha
  • SPIE OPTO, SPIE Proceedings
  • DOI: 10.1117/12.2077426

Tunnel junction enhanced nanowire ultraviolet light emitting diodes
journal, September 2015

  • Sarwar, A. T. M. Golam; May, Brelon J.; Deitz, Julia I.
  • Applied Physics Letters, Vol. 107, Issue 10
  • DOI: 10.1063/1.4930593

GaInN-Based Tunnel Junctions in n–p–n Light Emitting Diodes
journal, August 2013

  • Kaga, Mitsuru; Morita, Takatoshi; Kuwano, Yuka
  • Japanese Journal of Applied Physics, Vol. 52, Issue 8S
  • DOI: 10.7567/JJAP.52.08JH06

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
journal, September 2014

  • Hirayama, Hideki; Maeda, Noritoshi; Fujikawa, Sachie
  • Japanese Journal of Applied Physics, Vol. 53, Issue 10
  • DOI: 10.7567/JJAP.53.100209

Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
journal, February 2017

  • Takano, Takayoshi; Mino, Takuya; Sakai, Jun
  • Applied Physics Express, Vol. 10, Issue 3
  • DOI: 10.7567/APEX.10.031002

Advances in group III-nitride-based deep UV light-emitting diode technology
journal, December 2010


Interband tunneling for hole injection in III-nitride ultraviolet emitters
journal, April 2015

  • Zhang, Yuewei; Krishnamoorthy, Sriram; Johnson, Jared M.
  • Applied Physics Letters, Vol. 106, Issue 14
  • DOI: 10.1063/1.4917529

Tunnel-injected sub-260 nm ultraviolet light emitting diodes
journal, May 2017

  • Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih
  • Applied Physics Letters, Vol. 110, Issue 20
  • DOI: 10.1063/1.4983352

Origin of efficiency droop in GaN-based light-emitting diodes
journal, October 2007

  • Kim, Min-Ho; Schubert, Martin F.; Dai, Qi
  • Applied Physics Letters, Vol. 91, Issue 18
  • DOI: 10.1063/1.2800290

Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs
journal, April 2016

  • Zhang, Yuewei; Allerman, Andrew A.; Krishnamoorthy, Sriram
  • Applied Physics Express, Vol. 9, Issue 5
  • DOI: 10.7567/APEX.9.052102

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy
journal, February 2016

  • Okumura, Hironori; Martin, Denis; Malinverni, Marco
  • Applied Physics Letters, Vol. 108, Issue 7
  • DOI: 10.1063/1.4942369

Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction
journal, November 2016

  • Yonkee, B. P.; Young, E. C.; DenBaars, S. P.
  • Applied Physics Letters, Vol. 109, Issue 19
  • DOI: 10.1063/1.4967501

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
journal, July 2012

  • Shatalov, Max; Sun, Wenhong; Lunev, Alex
  • Applied Physics Express, Vol. 5, Issue 8
  • DOI: 10.1143/APEX.5.082101

High power AlGaN ultraviolet light emitters
journal, June 2014


An AlGaN Core–Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band
journal, January 2017


Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
journal, April 1997

  • Takeuchi, Tetsuya; Sota, Shigetoshi; Katsuragawa, Maki
  • Japanese Journal of Applied Physics, Vol. 36, Issue Part 2, No. 4A
  • DOI: 10.1143/JJAP.36.L382

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates
journal, January 2011

  • Dalmau, R.; Moody, B.; Schlesser, R.
  • Journal of The Electrochemical Society, Vol. 158, Issue 5
  • DOI: 10.1149/1.3560527

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
journal, August 2009

  • Zhao, Hongping; Liu, Guangyu; Li, Xiao-Hang
  • Applied Physics Letters, Vol. 95, Issue 6
  • DOI: 10.1063/1.3204446

MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures
journal, January 2017

  • Islam, S. M.; Lee, Kevin; Verma, Jai
  • Applied Physics Letters, Vol. 110, Issue 4
  • DOI: 10.1063/1.4975068

Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes
journal, May 2011

  • Pernot, Cyril; Fukahori, Shinya; Inazu, Tetsuhiko
  • physica status solidi (a), Vol. 208, Issue 7
  • DOI: 10.1002/pssa.201001037

Ohmic contacts to p -type GaN mediated by polarization fields in thin InxGa1−xN capping layers
journal, February 2002

  • Gessmann, T.; Li, Y. -L.; Waldron, E. L.
  • Applied Physics Letters, Vol. 80, Issue 6
  • DOI: 10.1063/1.1445807

Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer
journal, October 2001

  • Kumakura, Kazuhide; Makimoto, Toshiki; Kobayashi, Naoki
  • Applied Physics Letters, Vol. 79, Issue 16
  • DOI: 10.1063/1.1410336

Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
journal, August 2013

  • Kuwano, Yuka; Kaga, Mitsuru; Morita, Takatoshi
  • Japanese Journal of Applied Physics, Vol. 52, Issue 8S
  • DOI: 10.7567/JJAP.52.08JK12

Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm
journal, November 2016

  • Zhao, S.; Sadaf, S. M.; Vanka, S.
  • Applied Physics Letters, Vol. 109, Issue 20
  • DOI: 10.1063/1.4967837

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions
journal, September 2016

  • Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih
  • Applied Physics Letters, Vol. 109, Issue 12
  • DOI: 10.1063/1.4962900

GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions
journal, July 2015

  • Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei
  • Applied Physics Express, Vol. 8, Issue 8
  • DOI: 10.7567/APEX.8.082103

270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power
journal, March 2013

  • Grandusky, James R.; Chen, Jianfeng; Gibb, Shawn R.
  • Applied Physics Express, Vol. 6, Issue 3
  • DOI: 10.7567/APEX.6.032101

Low-resistance GaN tunnel homojunctions with 150 kA/cm 2 current and repeatable negative differential resistance
journal, March 2016

  • Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei
  • Applied Physics Letters, Vol. 108, Issue 13
  • DOI: 10.1063/1.4944998

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes
journal, November 2016

  • Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih
  • Applied Physics Letters, Vol. 109, Issue 19
  • DOI: 10.1063/1.4967698

Ultraviolet light-emitting diodes based on group three nitrides
journal, February 2008