skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electrostatic screening mediated by interfacial charge transfer in molecular assemblies on semiconductor substrates

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1373427
Grant/Contract Number:  
SC0006400
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 96 Journal Issue: 3; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Tan, A., Wagner, S. R., and Zhang, P. P. Electrostatic screening mediated by interfacial charge transfer in molecular assemblies on semiconductor substrates. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.035313.
Tan, A., Wagner, S. R., & Zhang, P. P. Electrostatic screening mediated by interfacial charge transfer in molecular assemblies on semiconductor substrates. United States. doi:10.1103/PhysRevB.96.035313.
Tan, A., Wagner, S. R., and Zhang, P. P. Mon . "Electrostatic screening mediated by interfacial charge transfer in molecular assemblies on semiconductor substrates". United States. doi:10.1103/PhysRevB.96.035313.
@article{osti_1373427,
title = {Electrostatic screening mediated by interfacial charge transfer in molecular assemblies on semiconductor substrates},
author = {Tan, A. and Wagner, S. R. and Zhang, P. P.},
abstractNote = {},
doi = {10.1103/PhysRevB.96.035313},
journal = {Physical Review B},
number = 3,
volume = 96,
place = {United States},
year = {2017},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.96.035313

Save / Share:

Works referenced in this record:

Energy-Level Alignment at Organic/Metal and Organic/Organic Interfaces
journal, April 2009

  • Braun, Slawomir; Salaneck, William R.; Fahlman, Mats
  • Advanced Materials, Vol. 21, Issue 14-15, p. 1450-1472
  • DOI: 10.1002/adma.200802893