Quantum spin Hall state in monolayer 1T'-WTe2

Tang, Shujie; Zhang, Chaofan; Wong, Dillon; Pedramrazi, Zahra; Tsai, Hsin-Zon; Jia, Chunjing; Moritz, Brian; Claassen, Martin; Ryu, Hyejin; Kahn, Salman; Jiang, Juan; Yan, Hao; Hashimoto, Makoto; Lu, Donghui; Moore, Robert G.; Hwang, Chan-Cuk; Hwang, Choongyu; Hussain, Zahid; Chen, Yulin; Ugeda, Miguel M.; Liu, Zhi; Xie, Xiaoming; Devereaux, Thomas P.; Crommie, Michael F.; Mo, Sung-Kwan; Shen, Zhi-Xun

doi:10.1038/nphys4174

Title: Quantum spin Hall state in monolayer 1T^'-WTe₂

Journal Article · 26 June 2017 · Nature Physics

DOI: https://doi.org/10.1038/nphys4174 · OSTI ID:1373205

Tang, Shujie ^[1]; Zhang, Chaofan ^[2]; Wong, Dillon ^[3]; Pedramrazi, Zahra ^[3]; Tsai, Hsin-Zon ^[3]; Jia, Chunjing ^[2]; Moritz, Brian ^[4]; Claassen, Martin ^[4]; Ryu, Hyejin ^[5]; Kahn, Salman ^[3]; Jiang, Juan ^[6]; Yan, Hao ^[2]; Hashimoto, Makoto ^[7];

^[7]; Moore, Robert G. ^[2]; Hwang, Chan-Cuk ^[8]; Hwang, Choongyu ^[9]; Hussain, Zahid ^[10]; Chen, Yulin ^[11]; Ugeda, Miguel M. ^[12] more »

SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Chinese Academy of Sciences (CAS), Shanghai (China). State Key Lab. of Functional Materials for Informatics, Shanghai Inst. of Microsystem and Information Technology; Shanghai Tech Univ., Shanghai (China). School of Physical Science and Technology
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials
Univ. of California, Berkeley, CA (United States). Dept.of Physics
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of). Max Plank POSTECH Center for Complex Phase Materials; Pusan National Univ., Busan (Korea, Republic of). Dept. of Physics
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Shanghai Tech Univ., Shanghai (China). School of Physical Science and Technology; Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of). Pohang Accelerator Lab.
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of). Pohang Accelerator Lab.
Pusan National Univ., Busan (Korea, Republic of). Dept. of Physics
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Univ. of Oxford (United Kingdom). Dept. of Physics and Clarendon Lab.
Ikerbasque, Basque Foundation for Science, Bilbao (Spain); CIC nanoGUNE Research Centre, San Sebastian (Spain)
Chinese Academy of Sciences (CAS), Shanghai (China). State Key Lab. of Functional Materials for Informatics, Shanghai Inst. of Microsystem and Information Technology; Shanghai Tech Univ., Shanghai (China). School of Physical Science and Technology
Univ. of California, Berkeley, CA (United States). Dept.of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Univ. of California, Berkeley, CA (United States). Kavli Energy Nano Sciences Inst.

A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of a magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin–orbit coupling. By investigating the electronic structure of epitaxially grown monolayer 1T^'-WTe₂ using angle-resolved photoemission (ARPES) and first-principles calculations, we observe clear signatures of topological band inversion and bandgap opening, which are the hallmarks of a QSH state. Scanning tunnelling microscopy measurements further confirm the correct crystal structure and the existence of a bulk bandgap, and provide evidence for a modified electronic structure near the edge that is consistent with the expectations for a QSH insulator. Finally, our results establish monolayer 1T^'-WTe₂ as a new class of QSH insulator with large band gap in a robust two-dimensional materials family of transition metal dichalcogenides (TMDCs).

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); National Natural Science Foundation of China (NSFC)

Grant/Contract Number:: AC02-05CH11231; AC02-76SF00515; FA9550-14-1-0277; MAT2014-60996-R

OSTI ID:: 1373205

Alternate ID(s):: OSTI ID: 1437962

Journal Information:: Nature Physics, Vol. 13, Issue 7; ISSN 1745-2473

Publisher:: Nature Publishing Group (NPG)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 517 works

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Remarkable electronic and optical anisotropy of layered 1T’-WTe ₂ 2D materials Zhang, Qiankun; Zhang, Rongjie; Chen, Jiancui Beilstein Journal of Nanotechnology, Vol. 10 https://doi.org/10.3762/bjnano.10.170	journal	January 2019
Versatile Crystal Structures and (Opto)electronic Applications of the 2D Metal Mono‐, Di‐, and Tri‐Chalcogenide Nanosheets Cui, Yu; Zhou, Ziqi; Li, Tao Advanced Functional Materials, Vol. 29, Issue 24 https://doi.org/10.1002/adfm.201900040	journal	March 2019
Discovery of Superconductivity in 2M WS 2 with Possible Topological Surface States Fang, Yuqiang; Pan, Jie; Zhang, Dongqin Advanced Materials https://doi.org/10.1002/adma.201901942	journal	June 2019
Dirac Fermion and Plasmon Dynamics in Graphene and 3D Topological Insulators In, Chihun; Choi, Hyunyong Advanced Optical Materials, Vol. 8, Issue 3 https://doi.org/10.1002/adom.201801334	journal	April 2019
Enhanced 1T′-Phase Stabilization and Chemical Reactivity in a MoTe ₂ Monolayer through Contact with a 2D Ca ₂ N Electride Tang, Qing ChemPhysChem, Vol. 20, Issue 4 https://doi.org/10.1002/cphc.201801047	journal	January 2019
Nonlinear anomalous Hall effect in few-layer WTe2 Kang, Kaifei; Li, Tingxin; Sohn, Egon Nature Materials, Vol. 18, Issue 4 https://doi.org/10.1038/s41563-019-0294-7	journal	February 2019
Directional massless Dirac fermions in a layered van der Waals material with one-dimensional long-range order Yang, T. Y.; Wan, Q.; Yan, D. Y. Nature Materials, Vol. 19, Issue 1 https://doi.org/10.1038/s41563-019-0494-1	journal	October 2019
Electric-field-tuned topological phase transition in ultrathin Na3Bi Collins, James L.; Tadich, Anton; Wu, Weikang Nature, Vol. 564, Issue 7736 https://doi.org/10.1038/s41586-018-0788-5	journal	December 2018
van der Waals heterostructures combining graphene and hexagonal boron nitride Yankowitz, Matthew; Ma, Qiong; Jarillo-Herrero, Pablo Nature Reviews Physics, Vol. 1, Issue 2 https://doi.org/10.1038/s42254-018-0016-0	journal	January 2019
Bi ₂ Se ₃ topological insulator at the 2D-limit: role of halide-doping on Dirac point Khatun, Salma; Bhunia, Hrishikesh; Pal, Amlan J. Physical Chemistry Chemical Physics, Vol. 20, Issue 26 https://doi.org/10.1039/c8cp02604a	journal	January 2018
Discovery of asymmetric NaXBi (X= Sn /Pb) monolayers with non-trivial topological properties Jia, Yi-zhen; Ji, Wei-xiao; Zhang, Chang-wen RSC Advances, Vol. 8, Issue 49 https://doi.org/10.1039/c8ra05458d	journal	January 2018
Topological phase transition induced by p x,y and p z band inversion in a honeycomb lattice Zhang, Huisheng; Ning, Yaohui; Yang, Wenjia Nanoscale, Vol. 11, Issue 29 https://doi.org/10.1039/c9nr04268g	journal	January 2019
Tuning spin–orbit coupling in 2D materials for spintronics: a topical review Premasiri, Kasun; Gao, Xuan P. A. Journal of Physics: Condensed Matter, Vol. 31, Issue 19 https://doi.org/10.1088/1361-648x/ab04c7	journal	March 2019
Epitaxial growth and electronic properties of few-layer stanene on InSb (1 1 1) Zheng, Xiaohu; Zhang, Jian-Feng; Tong, Bingbing 2D Materials, Vol. 7, Issue 1 https://doi.org/10.1088/2053-1583/ab42b9	journal	October 2019
Unified picture of lattice instabilities in metallic transition metal dichalcogenides Pasquier, Diego; Yazyev, Oleg V. Physical Review B, Vol. 100, Issue 20 https://doi.org/10.1103/physrevb.100.201103	journal	November 2019
Dual topological insulator and insulator-semimetal transition in mirror-symmetric honeycomb materials Mao, Ning; Hu, Xiangting; Niu, Chengwang Physical Review B, Vol. 100, Issue 20 https://doi.org/10.1103/physrevb.100.205116	journal	November 2019
Quantization of spin Hall conductivity in two-dimensional topological insulators versus symmetry and spin-orbit interaction Matusalem, Filipe; Marques, Marcelo; Teles, Lara K. Physical Review B, Vol. 100, Issue 24 https://doi.org/10.1103/physrevb.100.245430	journal	December 2019
Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well Krishtopenko, S. S.; Ruffenach, S.; Gonzalez-Posada, F. Physical Review B, Vol. 97, Issue 24 https://doi.org/10.1103/physrevb.97.245419	journal	June 2018
Time-Reversal Symmetry-Breaking Nematic Insulators near Quantum Spin Hall Phase Transitions Xue, Fei; MacDonald, A. H. Physical Review Letters, Vol. 120, Issue 18 https://doi.org/10.1103/PhysRevLett.120.186802	journal	May 2018
Ion intercalation engineering of electronic properties of two-dimensional crystals of 2 H − TaSe 2 Wu, Yueshen; Xing, Hui; Lian, Chao-Sheng Physical Review Materials, Vol. 3, Issue 10 https://doi.org/10.1103/physrevmaterials.3.104003	journal	October 2019
Observation of the quantum spin Hall effect up to 100 kelvin in a monolayer crystal Wu, Sanfeng; Fatemi, Valla; Gibson, Quinn D. Science, Vol. 359, Issue 6371 https://doi.org/10.1126/science.aan6003	journal	January 2018
Raman spectrum of layered jacutingaite (Pt ₂ HgSe ₃ ) crystals—Experimental and theoretical study Longuinhos, Raphael; Vymazalová, Anna; Cabral, Alexandre R. Journal of Raman Spectroscopy, Vol. 51, Issue 2 https://doi.org/10.1002/jrs.5764	journal	November 2019
Low temperature epitaxy of tungsten–telluride heterostructure films Vermeulen, Paul Alexander; Momand, Jamo; Kooi, Bart Jan CrystEngComm, Vol. 21, Issue 22 https://doi.org/10.1039/c9ce00338j	journal	January 2019
Varying topological properties of two-dimensional honeycomb lattices composed of endohedral fullerenes Zeng, Jiang; Zhang, Yan-Fang; Qin, Wei Physical Review B, Vol. 100, Issue 4 https://doi.org/10.1103/physrevb.100.045143	journal	July 2019
Bulk and Surface Electronic Structure of the Dual-Topology Semimetal Pt$_2$ HgSe$_3$ Cucchi, I.; Marrazzo, A.; Cappelli, E. Deutsches Elektronen-Synchrotron, DESY, Hamburg https://doi.org/10.3204/pubdb-2021-00172	text	January 2020
The Xenes Generations: A Taxonomy of Epitaxial Single‐Element 2D Materials Grazianetti, Carlo; Martella, Christian; Molle, Alessandro physica status solidi (RRL) – Rapid Research Letters, Vol. 14, Issue 2 https://doi.org/10.1002/pssr.202070013	journal	September 2019
Evidence for a narrow band gap phase in 1T′ WS ₂ nanosheet Pierucci, Debora; Zribi, Jihene; Livache, Clément Applied Physics Letters, Vol. 115, Issue 3 https://doi.org/10.1063/1.5091997	journal	July 2019
Electrically tuneable nonlinear anomalous Hall effect in two-dimensional transition-metal dichalcogenides WTe2 and MoTe2 Zhang, Yang; Brink, Jeroen van den; Felser, Claudia arXiv https://doi.org/10.48550/arxiv.1804.11069	text	January 2018
Experimental Observation of Bound States of 2D Dirac Electrons at Surface Steps of the Topological Insulator Bi$_2$Se$_3$ Fedotov, N. I.; Zaitsev-Zotov, S. V. arXiv https://doi.org/10.48550/arxiv.1805.09303	text	January 2018
Multi-carrier transport in ZrTe5 film Tang, Fangdong; Wang, Peipei; Wang, Peng arXiv https://doi.org/10.48550/arxiv.1806.01518	text	January 2018
Evidence for a quantum-spin-Hall phase in graphene decorated with Bi2Te3 nanoparticles Hatsuda, K.; Mine, H.; Nakamura, T. arXiv https://doi.org/10.48550/arxiv.1806.07027	text	January 2018
Numerical analysis of surface and edge states in slabs, stripes, rods and surface steps of topological insulators Fedotov, N. I.; Zaitsev-Zotov, S. V. arXiv https://doi.org/10.48550/arxiv.1807.09068	text	January 2018
Gate-induced superconductivity in a monolayer topological insulator Sajadi, Ebrahim; Palomaki, Tauno; Fei, Zaiyao arXiv https://doi.org/10.48550/arxiv.1809.04691	text	January 2018
Enhanced lifetimes of spin chains coupled to chiral edge states Delgado, F.; Fernández-Rossier, J. arXiv https://doi.org/10.48550/arxiv.1811.03973	text	January 2018
Gate tuning from exciton superfluid to quantum anomalous Hall in van der Waals heterobilayer Zhu, Qizhong; Tu, Matisse Wei-Yuan; Tong, Qingjun arXiv https://doi.org/10.48550/arxiv.1812.01834	text	January 2018
Experimental Progress on Layered Topological Semimetals Ma, Junchao; Deng, Ke; Zheng, Lu arXiv https://doi.org/10.48550/arxiv.1902.06874	text	January 2019
Two-dimensional topological materials discovery by symmetry-indicator method Wang, Di; Tang, Feng; Ji, Jialin arXiv https://doi.org/10.48550/arxiv.1906.01283	text	January 2019
Phase evolution and superconductivity enhancement in Se-substituted MoTe$_2$ thin films Li, Peiling; Cui, Jian; Zhou, Jiadong arXiv https://doi.org/10.48550/arxiv.1907.03521	text	January 2019
Van der Waals heterostructures for high-performance device applications: challenges and opportunities Liang, Shi-Jun; Cheng, Bin; Cui, Xinyi arXiv https://doi.org/10.48550/arxiv.1912.10886	text	January 2019