skip to main content


Title: Development of GaInP Solar Cells Grown by Hydride Vapor Phase Epitaxy

We demonstrate the growth of homojunction GaInP solar cells by dynamic hydride vapor phase epitaxy for the first time. Simple unpassivated n-on-p structures grown in an inverted configuration with gold back reflectors were analyzed. Short wavelength performance varied strongly with emitter thickness, since collection in the emitter was limited by the lack of surface passivation. Collection in the base increased strongly with decreasing doping density, in the range 1 x 10 16 - 5 x 10 17 cm -3. Optical modeling indicated that, in our best device, doped ~1 x 10 16 cm -3, almost 94% of photons that passed through the emitter were collected. Modeling also indicated that the majority of collection occurs in the depletion region with this design, suggesting that nonradiative recombination there might limit device performance. In agreement with this observation, the experimental dark J-V curve exhibited an ideality factor near n = 2. Thus, limitation of deep level carrier traps in the material is a path to improved performance. Preliminary experiments indicate that a reduced V/III ratio, which potentially affects the density of these presumed traps, improves cell performance. With reduced V/III ratio, we demonstrate a ~13% efficient GaInP cell measured under the 1-sun AM1.5Gmore » spectrum. In conclusion, this cell had an antireflective coating, but no front surface passivation.« less
 [1] ;  [1] ;  [2] ;  [2] ;  [2] ;  [1] ;  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Colorado School of Mines, Golden, CO (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 2156-3381
Grant/Contract Number:
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 7; Journal Issue: 4; Journal ID: ISSN 2156-3381
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; III-V multijunction solar cells; III-V semiconductor materials; deposition and characterization of thin film photovoltaic (PV) absorbers; semiconductor growth
OSTI Identifier: