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Title: Optimizing surface defects for atomic-scale electronics: Si dangling bonds

Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
Grant/Contract Number:  
AC02-06CH11357; AC02-05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Name: Physical Review Materials Journal Volume: 1 Journal Issue: 2; Journal ID: ISSN 2475-9953
American Physical Society
Country of Publication:
United States

Citation Formats

Scherpelz, Peter, and Galli, Giulia. Optimizing surface defects for atomic-scale electronics: Si dangling bonds. United States: N. p., 2017. Web. doi:10.1103/PhysRevMaterials.1.021602.
Scherpelz, Peter, & Galli, Giulia. Optimizing surface defects for atomic-scale electronics: Si dangling bonds. United States. doi:10.1103/PhysRevMaterials.1.021602.
Scherpelz, Peter, and Galli, Giulia. Mon . "Optimizing surface defects for atomic-scale electronics: Si dangling bonds". United States. doi:10.1103/PhysRevMaterials.1.021602.
title = {Optimizing surface defects for atomic-scale electronics: Si dangling bonds},
author = {Scherpelz, Peter and Galli, Giulia},
abstractNote = {},
doi = {10.1103/PhysRevMaterials.1.021602},
journal = {Physical Review Materials},
number = 2,
volume = 1,
place = {United States},
year = {2017},
month = {7}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevMaterials.1.021602

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Cited by: 1 work
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