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Title: Optimizing surface defects for atomic-scale electronics: Si dangling bonds

Authors:
;
Publication Date:
Grant/Contract Number:
AC02-06CH11357; AC02-05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Name: Physical Review Materials Journal Volume: 1 Journal Issue: 2; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1372591

Scherpelz, Peter, and Galli, Giulia. Optimizing surface defects for atomic-scale electronics: Si dangling bonds. United States: N. p., Web. doi:10.1103/PhysRevMaterials.1.021602.
Scherpelz, Peter, & Galli, Giulia. Optimizing surface defects for atomic-scale electronics: Si dangling bonds. United States. doi:10.1103/PhysRevMaterials.1.021602.
Scherpelz, Peter, and Galli, Giulia. 2017. "Optimizing surface defects for atomic-scale electronics: Si dangling bonds". United States. doi:10.1103/PhysRevMaterials.1.021602.
@article{osti_1372591,
title = {Optimizing surface defects for atomic-scale electronics: Si dangling bonds},
author = {Scherpelz, Peter and Galli, Giulia},
abstractNote = {},
doi = {10.1103/PhysRevMaterials.1.021602},
journal = {Physical Review Materials},
number = 2,
volume = 1,
place = {United States},
year = {2017},
month = {7}
}

Works referenced in this record:

Generalized Gradient Approximation Made Simple
journal, October 1996
  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energies
journal, October 1986

Self-Consistent Equations Including Exchange and Correlation Effects
journal, November 1965