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Title: Impact of laser anneal on NiPt silicide texture and chemical composition

Authors:
ORCiD logo [1] ;  [2] ;  [3] ; ORCiD logo [4] ;  [4] ;  [4] ;  [4] ;  [4] ;  [5]
  1. STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France, Univ. Grenoble Alpes, CNRS, LTM, F-38000 Grenoble, France
  2. IBM, 850 rue Jean Monnet, 38926 Crolles Cedex, France
  3. IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA
  4. STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France
  5. Univ. Grenoble Alpes, CNRS, LTM, F-38000 Grenoble, France
Publication Date:
Grant/Contract Number:
AC02- 98CH10886
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 121; Journal Issue: 22; Related Information: CHORUS Timestamp: 2018-02-14 11:20:22; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1372507