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Title: Spatially resolved, substrate-induced rectification in C 60 bilayers on copper

Here, we demonstrate rectification ratios ( RR) of ≳1000 at biases of 1.3 V in bilayers of C 60 deposited on copper. Using scanning tunneling spectroscopy and first-principles calculations, we show that the strong coupling between C 60 and the Cu(111) surface leads to the metallization of the bottom C 60 layer, while the molecular orbitals of the top C60 are essentially unaffected. Due to this substrate-induced symmetry breaking and to a tunneling transport mechanism, the system behaves as a hole-blocking layer, with a spatial dependence of the onset voltage on intra-layer coordination. Together with previous observations of strong electron-blocking character of pentacene/C 60 bilayers on Cu(111), this work further demonstrates the potential of strongly hybridized, C 60-coated electrodes to harness the electrical functionality of molecular components.
Authors:
 [1] ;  [2] ;  [2]
  1. Univ. of Central Lancashire, Preston (United Kingdom)
  2. Argonne National Lab. (ANL), Argonne, IL (United States)
Publication Date:
Grant/Contract Number:
AC02-06CH11357; FG02-09ER16109
Type:
Accepted Manuscript
Journal Name:
Journal of Chemical Physics
Additional Journal Information:
Journal Volume: 146; Journal Issue: 9; Journal ID: ISSN 0021-9606
Publisher:
American Institute of Physics (AIP)
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; scanning tunneling spectroscopy; Schottky; density functional theory; fullerene; rectification
OSTI Identifier:
1371915
Alternate Identifier(s):
OSTI ID: 1349344

Smerdon, J. A., Darancet, P., and Guest, J. R.. Spatially resolved, substrate-induced rectification in C60 bilayers on copper. United States: N. p., Web. doi:10.1063/1.4975795.
Smerdon, J. A., Darancet, P., & Guest, J. R.. Spatially resolved, substrate-induced rectification in C60 bilayers on copper. United States. doi:10.1063/1.4975795.
Smerdon, J. A., Darancet, P., and Guest, J. R.. 2017. "Spatially resolved, substrate-induced rectification in C60 bilayers on copper". United States. doi:10.1063/1.4975795. https://www.osti.gov/servlets/purl/1371915.
@article{osti_1371915,
title = {Spatially resolved, substrate-induced rectification in C60 bilayers on copper},
author = {Smerdon, J. A. and Darancet, P. and Guest, J. R.},
abstractNote = {Here, we demonstrate rectification ratios (RR) of ≳1000 at biases of 1.3 V in bilayers of C60 deposited on copper. Using scanning tunneling spectroscopy and first-principles calculations, we show that the strong coupling between C60 and the Cu(111) surface leads to the metallization of the bottom C60 layer, while the molecular orbitals of the top C60 are essentially unaffected. Due to this substrate-induced symmetry breaking and to a tunneling transport mechanism, the system behaves as a hole-blocking layer, with a spatial dependence of the onset voltage on intra-layer coordination. Together with previous observations of strong electron-blocking character of pentacene/C60 bilayers on Cu(111), this work further demonstrates the potential of strongly hybridized, C60-coated electrodes to harness the electrical functionality of molecular components.},
doi = {10.1063/1.4975795},
journal = {Journal of Chemical Physics},
number = 9,
volume = 146,
place = {United States},
year = {2017},
month = {2}
}