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Title: Nanoscale x-ray imaging of circuit features without wafer etching

Abstract

Modern integrated circuits (ICs) employ a myriad of materials organized at nanoscale dimensions, and certain critical tolerances must be met for them to function. To understand departures from intended functionality, it is essential to examine ICs as manufactured so as to adjust design rules ideally in a nondestructive way so that imaged structures can be correlated with electrical performance. Electron microscopes can do this on thin regions or on exposed surfaces, but the required processing alters or even destroys functionality. Microscopy with multi-keV x-rays provides an alternative approach with greater penetration, but the spatial resolution of x-ray imaging lenses has not allowed one to see the required detail in the latest generation of ICs. X-ray ptychography provides a way to obtain images of ICs without lens-imposed resolution limits with past work delivering 20–40-nm resolution on thinned ICs. We describe a simple model for estimating the required exposure and use it to estimate the future potential for this technique. Here we show that this approach can be used to image circuit detail through an unprocessed 300-μm-thick silicon wafer with sub-20-nm detail clearly resolved after mechanical polishing to 240-μm thickness was used to eliminate image contrast caused by Si wafer surface scratches.more » Here, by using continuous x-ray scanning, massively parallel computation, and a new generation of synchrotron light sources, this should enable entire nonetched ICs to be imaged to 10-nm resolution or better while maintaining their ability to function in electrical tests.« less

Authors:
 [1];  [2];  [3];  [3];  [3];  [4];  [4];  [5];  [6];  [7]
  1. Northwestern Univ., Evanston, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
  2. Northwestern Univ., Evanston, IL (United States)
  3. Argonne National Lab. (ANL), Argonne, IL (United States)
  4. Univ. of Southern California, Los Angeles, CA (United States)
  5. Intel Corp., Hillsboro, OR (United States)
  6. Intel Corp., Hillsboro, OR (United States); Micro Encoder, Inc., Kirkland, WA (United States)
  7. Argonne National Lab. (ANL), Argonne, IL (United States); Northwestern Univ., Evanston, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Institutes of Health (NIH)
OSTI Identifier:
1371746
Alternate Identifier(s):
OSTI ID: 1348283
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 10; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Deng, Junjing, Hong, Young Pyo, Chen, Si, Nashed, Youssef S. G., Peterka, Tom, Levi, Anthony J. F., Damoulakis, John, Saha, Sayan, Eiles, Travis, and Jacobsen, Chris. Nanoscale x-ray imaging of circuit features without wafer etching. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.104111.
Deng, Junjing, Hong, Young Pyo, Chen, Si, Nashed, Youssef S. G., Peterka, Tom, Levi, Anthony J. F., Damoulakis, John, Saha, Sayan, Eiles, Travis, & Jacobsen, Chris. Nanoscale x-ray imaging of circuit features without wafer etching. United States. doi:10.1103/PhysRevB.95.104111.
Deng, Junjing, Hong, Young Pyo, Chen, Si, Nashed, Youssef S. G., Peterka, Tom, Levi, Anthony J. F., Damoulakis, John, Saha, Sayan, Eiles, Travis, and Jacobsen, Chris. Fri . "Nanoscale x-ray imaging of circuit features without wafer etching". United States. doi:10.1103/PhysRevB.95.104111. https://www.osti.gov/servlets/purl/1371746.
@article{osti_1371746,
title = {Nanoscale x-ray imaging of circuit features without wafer etching},
author = {Deng, Junjing and Hong, Young Pyo and Chen, Si and Nashed, Youssef S. G. and Peterka, Tom and Levi, Anthony J. F. and Damoulakis, John and Saha, Sayan and Eiles, Travis and Jacobsen, Chris},
abstractNote = {Modern integrated circuits (ICs) employ a myriad of materials organized at nanoscale dimensions, and certain critical tolerances must be met for them to function. To understand departures from intended functionality, it is essential to examine ICs as manufactured so as to adjust design rules ideally in a nondestructive way so that imaged structures can be correlated with electrical performance. Electron microscopes can do this on thin regions or on exposed surfaces, but the required processing alters or even destroys functionality. Microscopy with multi-keV x-rays provides an alternative approach with greater penetration, but the spatial resolution of x-ray imaging lenses has not allowed one to see the required detail in the latest generation of ICs. X-ray ptychography provides a way to obtain images of ICs without lens-imposed resolution limits with past work delivering 20–40-nm resolution on thinned ICs. We describe a simple model for estimating the required exposure and use it to estimate the future potential for this technique. Here we show that this approach can be used to image circuit detail through an unprocessed 300-μm-thick silicon wafer with sub-20-nm detail clearly resolved after mechanical polishing to 240-μm thickness was used to eliminate image contrast caused by Si wafer surface scratches. Here, by using continuous x-ray scanning, massively parallel computation, and a new generation of synchrotron light sources, this should enable entire nonetched ICs to be imaged to 10-nm resolution or better while maintaining their ability to function in electrical tests.},
doi = {10.1103/PhysRevB.95.104111},
journal = {Physical Review B},
number = 10,
volume = 95,
place = {United States},
year = {2017},
month = {3}
}

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Works referenced in this record:

Parallel ptychographic reconstruction
journal, January 2014

  • Nashed, Youssef S. G.; Vine, David J.; Peterka, Tom
  • Optics Express, Vol. 22, Issue 26
  • DOI: 10.1364/OE.22.032082

Phase recovery and lensless imaging by iterative methods in optical, X-ray and electron diffraction
journal, May 2002

  • Spence, J. C. H.; Weierstall, U.; Howells, M.
  • Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences, Vol. 360, Issue 1794
  • DOI: 10.1098/rsta.2001.0972

High-resolution X-ray imaging—a powerful nondestructive technique for applications in semiconductor industry
journal, May 2008


The Bionanoprobe: hard X-ray fluorescence nanoprobe with cryogenic capabilities
journal, December 2013


Reconstructing state mixtures from diffraction measurements
journal, February 2013


Hard x-ray scanning microscopy with coherent radiation: Beyond the resolution of conventional x-ray microscopes
journal, June 2012

  • Schropp, A.; Hoppe, R.; Patommel, J.
  • Applied Physics Letters, Vol. 100, Issue 25
  • DOI: 10.1063/1.4729942

Quantitative x-ray phase nanotomography
journal, January 2012


Fourier shell correlation threshold criteria
journal, September 2005


Signal-to-noise and radiation exposure considerations in conventional and diffraction x-ray microscopy
journal, January 2009

  • Huang, Xiaojing; Miao, Huijie; Steinbrener, Jan
  • Optics Express, Vol. 17, Issue 16
  • DOI: 10.1364/OE.17.013541

Three-dimensional imaging of nanovoids in copper interconnects using incoherent bright field tomography
journal, June 2006

  • Ercius, Peter; Weyland, Matthew; Muller, David A.
  • Applied Physics Letters, Vol. 88, Issue 24
  • DOI: 10.1063/1.2213185

Mean free paths for inelastic electron scattering in silicon and poly(styrene) nanospheres
journal, January 2003


Continuous motion scan ptychography: characterization for increased speed in coherent x-ray imaging
journal, January 2015

  • Deng, Junjing; Nashed, Youssef S. G.; Chen, Si
  • Optics Express, Vol. 23, Issue 5
  • DOI: 10.1364/OE.23.005438

The correlation averaging of a regularly arranged bacterial cell envelope protein
journal, August 1982


Movable Aperture Lensless Transmission Microscopy: A Novel Phase Retrieval Algorithm
journal, July 2004


X-Ray Interactions: Photoabsorption, Scattering, Transmission, and Reflection at E = 50-30,000 eV, Z = 1-92
journal, July 1993

  • Henke, B. L.; Gullikson, E. M.; Davis, J. C.
  • Atomic Data and Nuclear Data Tables, Vol. 54, Issue 2, p. 181-342
  • DOI: 10.1006/adnd.1993.1013

High-throughput ptychography using Eiger-scanning X-ray nano-imaging of extended regions
journal, January 2014

  • Guizar-Sicairos, Manuel; Johnson, Ian; Diaz, Ana
  • Optics Express, Vol. 22, Issue 12
  • DOI: 10.1364/OE.22.014859

Phase retrieval algorithms: a comparison
journal, January 1982


Fly-scan ptychography
journal, March 2015

  • Huang, Xiaojing; Lauer, Kenneth; Clark, Jesse N.
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep09074

High-Resolution Scanning X-ray Diffraction Microscopy
journal, July 2008


Noise models for low counting rate coherent diffraction imaging
journal, January 2012

  • Godard, Pierre; Allain, Marc; Chamard, Virginie
  • Optics Express, Vol. 20, Issue 23
  • DOI: 10.1364/OE.20.025914

X-ray ptychographic computed tomography at 16 nm isotropic 3D resolution
journal, January 2014

  • Holler, M.; Diaz, A.; Guizar-Sicairos, M.
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep03857

On-the-fly scans for X-ray ptychography
journal, December 2014

  • Pelz, Philipp M.; Guizar-Sicairos, Manuel; Thibault, Pierre
  • Applied Physics Letters, Vol. 105, Issue 25
  • DOI: 10.1063/1.4904943

The Hunt For The Kill Switch
journal, May 2008


Soft X-ray microscopy at a spatial resolution better than 15 nm
journal, June 2005

  • Chao, Weilun; Harteneck, Bruce D.; Liddle, J. Alexander
  • Nature, Vol. 435, Issue 7046
  • DOI: 10.1038/nature03719

Hard-X-Ray Lensless Imaging of Extended Objects
journal, January 2007


Quantitative coherent diffractive imaging of an integrated circuit at a spatial resolution of 20 nm
journal, November 2008

  • Abbey, Brian; Williams, Garth J.; Pfeifer, Mark A.
  • Applied Physics Letters, Vol. 93, Issue 21
  • DOI: 10.1063/1.3025819

Similarity measures between images
journal, January 1987


In situ x-ray microscopic observation of the electromigration in passivated Cu interconnects
journal, March 2001

  • Schneider, G.; Hambach, D.; Niemann, B.
  • Applied Physics Letters, Vol. 78, Issue 13
  • DOI: 10.1063/1.1356446

Pair, Triplet, and Total Atomic Cross Sections (and Mass Attenuation Coefficients) for 1 MeV‐100 GeV Photons in Elements Z =1 to 100
journal, October 1980

  • Hubbell, J. H.; Gimm, H. A.; O/verbo/, I.
  • Journal of Physical and Chemical Reference Data, Vol. 9, Issue 4
  • DOI: 10.1063/1.555629

Reconstruction of a yeast cell from X-ray diffraction data
journal, June 2006

  • Thibault, Pierre; Elser, Veit; Jacobsen, Chris
  • Acta Crystallographica Section A Foundations of Crystallography, Vol. 62, Issue 4
  • DOI: 10.1107/S0108767306016515