Conduction band position tuning and Ga-doping in (Cd,Zn)S alloy thin films
Abstract
In recent years, the number of novel photovoltaic absorber materials under exploration has rapidly increased. However, to reap the most benefit from these new absorbers, alternative device structures and components must also be considered. In particular, the choice of a heterojunction partner, or contact layer, is critical to device optimization. In this work, we explore alternative n-type contact layer candidates that could be widely applicable to a variety of new absorbers. We use theory to calculate the band edge tuning provided by a variety of II-VI alloy systems, and select the (Cd,Zn)S system as one that affords a wide range of conduction band tuning. The synthesis of (Cd,Zn)S alloys is explored using atomic layer deposition, which afforded precise compositional control and produced crystalline thin films. The predicted tuning of the band gap and conduction band minimum is confirmed through X-ray photoelectron spectroscopy and optical absorption measurements. In addition, we investigated Ga-doping in Cd0.6Zn0.4S films to decrease their series resistance when used as contact layers in photovoltaic devices. In conclusion, this study provides a framework for exploring and optimizing alternative contact layer materials, which will prove critical to the success of new PV absorbers.
- Authors:
-
[1];
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Colorado School of Mines, Golden, CO (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1371527
- Report Number(s):
- NREL/JA-5K00-66853
Journal ID: ISSN 2052-1537; MCFAC5
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Materials Chemistry Frontiers
- Additional Journal Information:
- Journal Volume: 1; Journal Issue: 7; Journal ID: ISSN 2052-1537
- Publisher:
- Royal Society of Chemistry
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; absorber materials; photovoltaics; thin films
Citation Formats
Baranowski, Lauryn L., Christensen, Steven, Welch, Adam W., Lany, Stephan, Young, Matthew, Toberer, Eric S., and Zakutayev, Andriy. Conduction band position tuning and Ga-doping in (Cd,Zn)S alloy thin films. United States: N. p., 2017.
Web. doi:10.1039/C6QM00291A.
Baranowski, Lauryn L., Christensen, Steven, Welch, Adam W., Lany, Stephan, Young, Matthew, Toberer, Eric S., & Zakutayev, Andriy. Conduction band position tuning and Ga-doping in (Cd,Zn)S alloy thin films. United States. https://doi.org/10.1039/C6QM00291A
Baranowski, Lauryn L., Christensen, Steven, Welch, Adam W., Lany, Stephan, Young, Matthew, Toberer, Eric S., and Zakutayev, Andriy. Mon .
"Conduction band position tuning and Ga-doping in (Cd,Zn)S alloy thin films". United States. https://doi.org/10.1039/C6QM00291A. https://www.osti.gov/servlets/purl/1371527.
@article{osti_1371527,
title = {Conduction band position tuning and Ga-doping in (Cd,Zn)S alloy thin films},
author = {Baranowski, Lauryn L. and Christensen, Steven and Welch, Adam W. and Lany, Stephan and Young, Matthew and Toberer, Eric S. and Zakutayev, Andriy},
abstractNote = {In recent years, the number of novel photovoltaic absorber materials under exploration has rapidly increased. However, to reap the most benefit from these new absorbers, alternative device structures and components must also be considered. In particular, the choice of a heterojunction partner, or contact layer, is critical to device optimization. In this work, we explore alternative n-type contact layer candidates that could be widely applicable to a variety of new absorbers. We use theory to calculate the band edge tuning provided by a variety of II-VI alloy systems, and select the (Cd,Zn)S system as one that affords a wide range of conduction band tuning. The synthesis of (Cd,Zn)S alloys is explored using atomic layer deposition, which afforded precise compositional control and produced crystalline thin films. The predicted tuning of the band gap and conduction band minimum is confirmed through X-ray photoelectron spectroscopy and optical absorption measurements. In addition, we investigated Ga-doping in Cd0.6Zn0.4S films to decrease their series resistance when used as contact layers in photovoltaic devices. In conclusion, this study provides a framework for exploring and optimizing alternative contact layer materials, which will prove critical to the success of new PV absorbers.},
doi = {10.1039/C6QM00291A},
journal = {Materials Chemistry Frontiers},
number = 7,
volume = 1,
place = {United States},
year = {2017},
month = {2}
}
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