Conduction band position tuning and Ga-doping in (Cd,Zn)S alloy thin films

Baranowski, Lauryn L.; Christensen, Steven; Welch, Adam W.; Lany, Stephan; Young, Matthew; Toberer, Eric S.; Zakutayev, Andriy

doi:10.1039/C6QM00291A

Title: Conduction band position tuning and Ga-doping in (Cd,Zn)S alloy thin films

Journal Article · 13 February 2017 · Materials Chemistry Frontiers

DOI: https://doi.org/10.1039/C6QM00291A · OSTI ID:1371527

^[1]; Christensen, Steven ^[2]; Welch, Adam W. ^[1]; Lany, Stephan ^[2]; Young, Matthew ^[2]; Toberer, Eric S. ^[3]; Zakutayev, Andriy ^[2]

National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Colorado School of Mines, Golden, CO (United States)

In recent years, the number of novel photovoltaic absorber materials under exploration has rapidly increased. However, to reap the most benefit from these new absorbers, alternative device structures and components must also be considered. In particular, the choice of a heterojunction partner, or contact layer, is critical to device optimization. In this work, we explore alternative n-type contact layer candidates that could be widely applicable to a variety of new absorbers. We use theory to calculate the band edge tuning provided by a variety of II-VI alloy systems, and select the (Cd,Zn)S system as one that affords a wide range of conduction band tuning. The synthesis of (Cd,Zn)S alloys is explored using atomic layer deposition, which afforded precise compositional control and produced crystalline thin films. The predicted tuning of the band gap and conduction band minimum is confirmed through X-ray photoelectron spectroscopy and optical absorption measurements. In addition, we investigated Ga-doping in Cd_0.6Zn_0.4S films to decrease their series resistance when used as contact layers in photovoltaic devices. In conclusion, this study provides a framework for exploring and optimizing alternative contact layer materials, which will prove critical to the success of new PV absorbers.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1371527

Report Number(s):: NREL/JA--5K00-66853

Journal Information:: Materials Chemistry Frontiers, Journal Name: Materials Chemistry Frontiers Journal Issue: 7 Vol. 1; ISSN 2052-1537; ISSN MCFAC5

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Conduction band position tuning and Ga-doping in (Cd,Zn)S alloy thin films

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