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Title: Resonant tunneling and intrinsic bistability in twisted graphene structures

Abstract

We predict that vertical transport in heterostructures formed by twisted graphene layers can reveal a unique bistability mechanism. Intrinsically bistable I - V characteristics arise from resonant tunneling and interlayer charge coupling, enabling multiple stable states in the sequential tunneling regime. We consider a simple trilayer architecture, with the outer layers acting as the source and drain and the middle layer floating. Under bias, the middle layer can be either resonant or nonresonant with the source and drain layers. The bistability is controlled by geometric device parameters easily tunable in experiments. Thus, the nanoscale architecture can enable uniquely fast switching times.

Authors:
 [1];  [1];  [1]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1371391
Alternate Identifier(s):
OSTI ID: 1294727
Grant/Contract Number:  
SC0001088
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 94; Journal Issue: 8; Related Information: CE partners with Massachusetts Institute of Technology (lead); Brookhaven National Laboratory; Harvard University; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; solar (photovoltaic); solid state lighting; photosynthesis (natural and artificial); charge transport; optics; synthesis (novel materials); synthesis (self-assembly); synthesis (scalable processing)

Citation Formats

Rodriguez-Nieva, J. F., Dresselhaus, M. S., and Levitov, L. S. Resonant tunneling and intrinsic bistability in twisted graphene structures. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.94.085412.
Rodriguez-Nieva, J. F., Dresselhaus, M. S., & Levitov, L. S. Resonant tunneling and intrinsic bistability in twisted graphene structures. United States. doi:10.1103/PhysRevB.94.085412.
Rodriguez-Nieva, J. F., Dresselhaus, M. S., and Levitov, L. S. Mon . "Resonant tunneling and intrinsic bistability in twisted graphene structures". United States. doi:10.1103/PhysRevB.94.085412. https://www.osti.gov/servlets/purl/1371391.
@article{osti_1371391,
title = {Resonant tunneling and intrinsic bistability in twisted graphene structures},
author = {Rodriguez-Nieva, J. F. and Dresselhaus, M. S. and Levitov, L. S.},
abstractNote = {We predict that vertical transport in heterostructures formed by twisted graphene layers can reveal a unique bistability mechanism. Intrinsically bistable I - V characteristics arise from resonant tunneling and interlayer charge coupling, enabling multiple stable states in the sequential tunneling regime. We consider a simple trilayer architecture, with the outer layers acting as the source and drain and the middle layer floating. Under bias, the middle layer can be either resonant or nonresonant with the source and drain layers. The bistability is controlled by geometric device parameters easily tunable in experiments. Thus, the nanoscale architecture can enable uniquely fast switching times.},
doi = {10.1103/PhysRevB.94.085412},
journal = {Physical Review B},
number = 8,
volume = 94,
place = {United States},
year = {2016},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 1 work
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Figures / Tables:

FIG. 1 FIG. 1: (a) Trilayer graphene heterostructure schematics, with layers labeled 1 to 3. Here I$ij$ and d$ij$ are the interlayer currents and distances. (b) Band structure of twisted graphene layers 1 (blue) and 2 (red). The twist angle θ defines a characteristic energy Δ [Eq. (1)] and three superlattice wavemore » vectors qA,B,C [Eq. (12)]. (c) Bistable I -V characteristics. The resonant and nonresonant bistable states are illustrated in the top left inset (details are discussed in Fig. 3). The procedure for finding bistable solutions is illustrated in the bottom right inset [see Eq. (9) and accompanying discussion].« less

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