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Title: Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures

Abstract

Graphene has attracted significant attention for high performance electronics due to its superior electronic and physical properties. Yet, the absence of a band gap and the resulting poor semiconducting properties of graphene have prevented its use as the active layer for transistors in digital logic applications. In contrast, alternative two-dimensional (2D) materials based on transition metal dichalcogenides (TMDCs) exhibit desirable semiconducting properties that have re-energized the development of 2D digital logic circuits. Specifically, graphene-TMDC heterojunctions have been explored as gate-tunable Schottky barrier devices due to the readily tunable work function of graphene that is enabled by its linear energy dispersion. In these devices, the electrical current is modulated by tuning the injection barrier height at the graphene-TMDC heterojunction through an applied gate potential, resulting in vertical field-effect transistors (VFETs) with high on/off current ratios suitable for digital electronics.[26-32] However, existing VFET designs have employed oxide gate dielectric layers with large operating voltage windows not suitable for modern-day electronics. Moreover, complementary VFETs with low threshold voltages have not been demonstrated, which implies that the necessary conditions for low-power integrated circuits have not yet been achieved in this device geometry.

Authors:
 [1];  [2];  [2];  [3];  [2];  [2];  [1]
  1. Sungkyunkwan Univ., Suwon (Republic of Korea); Northwestern Univ., Evanston, IL (United States)
  2. Northwestern Univ., Evanston, IL (United States)
  3. Soongsil Univ., Seoul (Korea)
Publication Date:
Research Org.:
Northwestern Univ., Evanston, IL (United States). Energy Frontier Research Center (EFRC) Argonne-Northwestern Solar Energy Research Center (ANSER)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF)
OSTI Identifier:
1371245
Grant/Contract Number:  
SC0001059
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 28; Journal Issue: 19; Related Information: ANSER partners with Northwestern University (lead); Argonne National Laboratory; University of Chicago; University of Illinois, Urbana-Champaign; Yale University; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; graphene; ion gels; low power; Schottky barrier; transition‐metal dichalcogenides; vertical transistors

Citation Formats

Choi, Yongsuk, Kang, Junmo, Jariwala, Deep, Kang, Moon Sung, Marks, Tobin J., Hersam, Mark C., and Cho, Jeong Ho. Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures. United States: N. p., 2016. Web. doi:10.1002/adma.201506450.
Choi, Yongsuk, Kang, Junmo, Jariwala, Deep, Kang, Moon Sung, Marks, Tobin J., Hersam, Mark C., & Cho, Jeong Ho. Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures. United States. doi:10.1002/adma.201506450.
Choi, Yongsuk, Kang, Junmo, Jariwala, Deep, Kang, Moon Sung, Marks, Tobin J., Hersam, Mark C., and Cho, Jeong Ho. Tue . "Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures". United States. doi:10.1002/adma.201506450. https://www.osti.gov/servlets/purl/1371245.
@article{osti_1371245,
title = {Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures},
author = {Choi, Yongsuk and Kang, Junmo and Jariwala, Deep and Kang, Moon Sung and Marks, Tobin J. and Hersam, Mark C. and Cho, Jeong Ho},
abstractNote = {Graphene has attracted significant attention for high performance electronics due to its superior electronic and physical properties. Yet, the absence of a band gap and the resulting poor semiconducting properties of graphene have prevented its use as the active layer for transistors in digital logic applications. In contrast, alternative two-dimensional (2D) materials based on transition metal dichalcogenides (TMDCs) exhibit desirable semiconducting properties that have re-energized the development of 2D digital logic circuits. Specifically, graphene-TMDC heterojunctions have been explored as gate-tunable Schottky barrier devices due to the readily tunable work function of graphene that is enabled by its linear energy dispersion. In these devices, the electrical current is modulated by tuning the injection barrier height at the graphene-TMDC heterojunction through an applied gate potential, resulting in vertical field-effect transistors (VFETs) with high on/off current ratios suitable for digital electronics.[26-32] However, existing VFET designs have employed oxide gate dielectric layers with large operating voltage windows not suitable for modern-day electronics. Moreover, complementary VFETs with low threshold voltages have not been demonstrated, which implies that the necessary conditions for low-power integrated circuits have not yet been achieved in this device geometry.},
doi = {10.1002/adma.201506450},
journal = {Advanced Materials},
number = 19,
volume = 28,
place = {United States},
year = {2016},
month = {3}
}

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