Fully CMOS-compatible titanium nitride nanoantennas
Abstract
CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. Finally, the optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.
- Authors:
-
- Stanford Univ., CA (United States). Dept. of Applied Physics; Stanford Univ., CA (United States). Dept. of Materials Science and Engineering
- Stanford Univ., CA (United States). Dept. of Materials Science and Engineering
- Stanford Univ., CA (United States). Dept. of Physics
- Publication Date:
- Research Org.:
- Energy Frontier Research Centers (EFRC) (United States). Light-Material Interactions in Energy Conversion (LMI)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1371150
- Grant/Contract Number:
- SC0001293
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 108; Journal Issue: 5; Related Information: LMI partners with California Institute of Technology (lead); Harvard University; University of Illinois, Urbana-Champaign; Lawrence Berkeley National Laboratory; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; solar (photovoltaic); solid state lighting; phonons; thermal conductivity; electrodes - solar; materials and chemistry by design; optics; synthesis (novel materials); synthesis (self-assembly)
Citation Formats
Briggs, Justin A., Naik, Gururaj V., Petach, Trevor A., Baum, Brian K., Goldhaber-Gordon, David, and Dionne, Jennifer A. Fully CMOS-compatible titanium nitride nanoantennas. United States: N. p., 2016.
Web. doi:10.1063/1.4941413.
Briggs, Justin A., Naik, Gururaj V., Petach, Trevor A., Baum, Brian K., Goldhaber-Gordon, David, & Dionne, Jennifer A. Fully CMOS-compatible titanium nitride nanoantennas. United States. https://doi.org/10.1063/1.4941413
Briggs, Justin A., Naik, Gururaj V., Petach, Trevor A., Baum, Brian K., Goldhaber-Gordon, David, and Dionne, Jennifer A. Fri .
"Fully CMOS-compatible titanium nitride nanoantennas". United States. https://doi.org/10.1063/1.4941413. https://www.osti.gov/servlets/purl/1371150.
@article{osti_1371150,
title = {Fully CMOS-compatible titanium nitride nanoantennas},
author = {Briggs, Justin A. and Naik, Gururaj V. and Petach, Trevor A. and Baum, Brian K. and Goldhaber-Gordon, David and Dionne, Jennifer A.},
abstractNote = {CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. Finally, the optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.},
doi = {10.1063/1.4941413},
journal = {Applied Physics Letters},
number = 5,
volume = 108,
place = {United States},
year = {Fri Feb 05 00:00:00 EST 2016},
month = {Fri Feb 05 00:00:00 EST 2016}
}
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