Title: van der Waals bilayer energetics: Generalized stacking-fault energy of graphene, boron nitride, and graphene/boron nitride bilayers

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics
 [1];  [1];  [1];  [2];  [1]
  1. Univ. of Pennsylvania, Philadelphia, PA (United States)
  2. Temple Univ., Philadelphia, PA (United States)

The structure, thermodynamics, and band gaps in graphene/graphene, boron nitride/boron nitride, and graphene/boron nitride bilayers are determined using several different corrections to first-principles approaches to account for the dispersion interactions. While the density functional dispersion correction, van der Waals density functional, meta–generalized gradient approximation, and adiabatic fluctuation-dissipation theorem methods (ACFDT-RPA) all lead to qualitatively similar predictions, the best accuracy is obtained through the application of the computationally expensive ACFDT-RPA method. We present an accurate ACFDT-RPA-based method to determine bilayer structure, generalized stacking-fault energy (GSFE), and band gaps as a function of the relative translation states of the two layers. The GSFE data clearly identify all of the stable and metastable bilayer translations as well as the barriers between them. Furthermore, this is key for predicting the sliding, formation, and adhesion energies for homo- and hetero-bilayers, as well as for the determination of defects in such multilayer van der Waals systems. These, in turn, provide an accurate approach for determining and manipulating the spatial variation of electronic structure.

Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for the Computational Design of Functional Layered Materials (CCDM)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
SC0012575
OSTI ID:
1371100
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 15 Vol. 92; ISSN 1098-0121; ISSN PRBMDO
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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Stacking in incommensurate graphene/hexagonal-boron-nitride heterostructures based on ab initio study of interlayer interaction journal August 2017
Pressure dependence of the magic twist angle in graphene superlattices journal August 2018
Shear instability in twisted bilayer graphene journal November 2018
Relaxation and domain formation in incommensurate two-dimensional heterostructures journal December 2018
Dihedral-angle-corrected registry-dependent interlayer potential for multilayer graphene structures journal December 2018
Stacking in incommensurate graphene/hexagonal-boron-nitride heterostructures based on ab initio study of interlayer interaction text January 2017
Atomic and electronic reconstruction at van der Waals interface in twisted bilayer graphene text January 2018
Dihedral-angle-corrected registry-dependent interlayer potential for multilayer graphene structures text January 2018