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Title: Studies on Thermoelectric Properties of n-type Polycrystalline SnSe 1-x S x by Iodine Doping

Abstract

Iodine-doped n-type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak ZT of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n-type Sn chalcogenide alloys. With increasing content of iodine, the carrier concentration changed from 2.3 × 10 17 cm -3 (p-type) to 5.0 × 10 15 cm -3 (n-type) then to 2.0 × 10 17 cm -3 (n-type). The decent ZT is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p-type SnSe. By alloying with 10 at% SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased ZT of ≈1.0 at about 773 K measured also along the hot pressing direction.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [2];  [1]
  1. Department of Physics and TcSUH, University of Houston, Houston TX 77204 USA
  2. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 USA
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1370978
Grant/Contract Number:  
SC0001299; FG02-09ER46577
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Energy Materials
Additional Journal Information:
Journal Volume: 5; Journal Issue: 12; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute; Journal ID: ISSN 1614-6832
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; solar (photovoltaic); solar (thermal); solid state lighting; phonons; thermal conductivity; thermoelectric; defects; mechanical behavior; charge transport; spin dynamics; materials and chemistry by design; optics; synthesis (novel materials); synthesis (self-assembly); synthesis (scalable processing)

Citation Formats

Zhang, Qian, Chere, Eyob Kebede, Sun, Jingying, Cao, Feng, Dahal, Keshab, Chen, Shuo, Chen, Gang, and Ren, Zhifeng. Studies on Thermoelectric Properties of n-type Polycrystalline SnSe 1-x S x by Iodine Doping. United States: N. p., 2015. Web. doi:10.1002/aenm.201500360.
Zhang, Qian, Chere, Eyob Kebede, Sun, Jingying, Cao, Feng, Dahal, Keshab, Chen, Shuo, Chen, Gang, & Ren, Zhifeng. Studies on Thermoelectric Properties of n-type Polycrystalline SnSe 1-x S x by Iodine Doping. United States. doi:10.1002/aenm.201500360.
Zhang, Qian, Chere, Eyob Kebede, Sun, Jingying, Cao, Feng, Dahal, Keshab, Chen, Shuo, Chen, Gang, and Ren, Zhifeng. Wed . "Studies on Thermoelectric Properties of n-type Polycrystalline SnSe 1-x S x by Iodine Doping". United States. doi:10.1002/aenm.201500360. https://www.osti.gov/servlets/purl/1370978.
@article{osti_1370978,
title = {Studies on Thermoelectric Properties of n-type Polycrystalline SnSe 1-x S x by Iodine Doping},
author = {Zhang, Qian and Chere, Eyob Kebede and Sun, Jingying and Cao, Feng and Dahal, Keshab and Chen, Shuo and Chen, Gang and Ren, Zhifeng},
abstractNote = {Iodine-doped n-type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak ZT of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n-type Sn chalcogenide alloys. With increasing content of iodine, the carrier concentration changed from 2.3 × 1017 cm-3 (p-type) to 5.0 × 1015 cm-3 (n-type) then to 2.0 × 1017 cm-3 (n-type). The decent ZT is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p-type SnSe. By alloying with 10 at% SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased ZT of ≈1.0 at about 773 K measured also along the hot pressing direction.},
doi = {10.1002/aenm.201500360},
journal = {Advanced Energy Materials},
number = 12,
volume = 5,
place = {United States},
year = {2015},
month = {4}
}

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