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Title: Suppressing sub-bandgap phonon-polariton heat transfer in near-field thermophotovoltaic devices for waste heat recovery

Abstract

Here, we consider a near-field thermophotovoltaic device with metal as the emitter and semiconductor as the photovoltaic cell. We show that when the cell is a III-V semiconductor, such as GaSb, parasitic phonon-polariton heat transfer reduces efficiency in the near-field regime, especially when the temperature of the emitter is not high enough. We further propose ways to avoid the phonon-polariton heat transfer by replacing the III-V semiconductor with a non-polar semiconductor such as Ge. Our work provides practical guidance on the design of near-field thermophotovoltaic systems for efficient harvesting of low-quality waste heat.

Authors:
 [1];  [2];  [2]
  1. Stanford Univ., CA (United States). Dept. of Applied Physics
  2. Stanford Univ., CA (United States). Dept. of Electrical Engineering, Ginzton Lab.
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC), Washington D.C. (United States). Light-Material Interactions in Energy Conversion (LMI)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1370908
Alternate Identifier(s):
OSTI ID: 1229655
Grant/Contract Number:  
SC0001293
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 9; Related Information: LMI partners with California Institute of Technology (lead); Harvard University; University of Illinois, Urbana-Champaign; Lawrence Berkeley National Laboratory; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic); solid state lighting; phonons; thermal conductivity; electrodes - solar; materials and chemistry by design; optics; synthesis (novel materials); synthesis (self-assembly)

Citation Formats

Chen, Kaifeng, Santhanam, Parthiban, and Fan, Shanhui. Suppressing sub-bandgap phonon-polariton heat transfer in near-field thermophotovoltaic devices for waste heat recovery. United States: N. p., 2015. Web. doi:10.1063/1.4929949.
Chen, Kaifeng, Santhanam, Parthiban, & Fan, Shanhui. Suppressing sub-bandgap phonon-polariton heat transfer in near-field thermophotovoltaic devices for waste heat recovery. United States. doi:10.1063/1.4929949.
Chen, Kaifeng, Santhanam, Parthiban, and Fan, Shanhui. Tue . "Suppressing sub-bandgap phonon-polariton heat transfer in near-field thermophotovoltaic devices for waste heat recovery". United States. doi:10.1063/1.4929949. https://www.osti.gov/servlets/purl/1370908.
@article{osti_1370908,
title = {Suppressing sub-bandgap phonon-polariton heat transfer in near-field thermophotovoltaic devices for waste heat recovery},
author = {Chen, Kaifeng and Santhanam, Parthiban and Fan, Shanhui},
abstractNote = {Here, we consider a near-field thermophotovoltaic device with metal as the emitter and semiconductor as the photovoltaic cell. We show that when the cell is a III-V semiconductor, such as GaSb, parasitic phonon-polariton heat transfer reduces efficiency in the near-field regime, especially when the temperature of the emitter is not high enough. We further propose ways to avoid the phonon-polariton heat transfer by replacing the III-V semiconductor with a non-polar semiconductor such as Ge. Our work provides practical guidance on the design of near-field thermophotovoltaic systems for efficient harvesting of low-quality waste heat.},
doi = {10.1063/1.4929949},
journal = {Applied Physics Letters},
number = 9,
volume = 107,
place = {United States},
year = {2015},
month = {9}
}

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Cited by: 14 works
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