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Title: Electrical Tuning of Exciton Binding Energies in Monolayer WS 2


We demonstrate continuous tuning of the exciton binding energy in monolayer WS2 by means of an externally applied voltage in a field-effect transistor device. Using optical spectroscopy, we monitor the ground and excited excitonic states as a function of gate voltage and track the evolution of the quasiparticle band gap. Here, the observed decrease of the exciton binding energy over the range of about 100 meV, accompanied by the renormalization of the quasiparticle band gap, is associated with screening of the Coulomb interaction by the electrically injected free charge carriers at densities up to 8 × 1012 cm–2. Complete ionization of the excitons due to the electrical doping is estimated to occur at a carrier density of several 1013 cm–2.

 [1];  [2];  [1];  [1];  [3];  [1];  [4]
  1. Columbia Univ., New York, NY (United States)
  2. Columbia Univ., New York, NY (United States); Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States)
  3. Columbia Univ., New York, NY (United States); Philipps-Univ. Marburg (Germany)
  4. Columbia Univ., New York, NY (United States); Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Re-Defining Photovoltaic Efficiency Through Molecule Scale Control (RPEMSC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Chemical Sciences, Geosciences, and Biosciences Division; National Science Foundation (NSF)
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1215790
Grant/Contract Number:  
SC0001085; DMR-1124894; DGE-106924; DGE-1144155
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 115; Journal Issue: 12; Related Information: RPEMSC partners with Columbia University (lead); Brookhaven National Laboratory; Purdue University; Journal ID: ISSN 0031-9007
American Physical Society (APS)
Country of Publication:
United States

Citation Formats

Chernikov, Alexey, van der Zande, Arend M., Hill, Heather M., Rigosi, Albert F., Velauthapillai, Ajanth, Hone, James, and Heinz, Tony F.. Electrical Tuning of Exciton Binding Energies in Monolayer WS2. United States: N. p., 2015. Web.
Chernikov, Alexey, van der Zande, Arend M., Hill, Heather M., Rigosi, Albert F., Velauthapillai, Ajanth, Hone, James, & Heinz, Tony F.. Electrical Tuning of Exciton Binding Energies in Monolayer WS2. United States.
Chernikov, Alexey, van der Zande, Arend M., Hill, Heather M., Rigosi, Albert F., Velauthapillai, Ajanth, Hone, James, and Heinz, Tony F.. Wed . "Electrical Tuning of Exciton Binding Energies in Monolayer WS2". United States.
title = {Electrical Tuning of Exciton Binding Energies in Monolayer WS2},
author = {Chernikov, Alexey and van der Zande, Arend M. and Hill, Heather M. and Rigosi, Albert F. and Velauthapillai, Ajanth and Hone, James and Heinz, Tony F.},
abstractNote = {We demonstrate continuous tuning of the exciton binding energy in monolayer WS2 by means of an externally applied voltage in a field-effect transistor device. Using optical spectroscopy, we monitor the ground and excited excitonic states as a function of gate voltage and track the evolution of the quasiparticle band gap. Here, the observed decrease of the exciton binding energy over the range of about 100 meV, accompanied by the renormalization of the quasiparticle band gap, is associated with screening of the Coulomb interaction by the electrically injected free charge carriers at densities up to 8 × 1012 cm–2. Complete ionization of the excitons due to the electrical doping is estimated to occur at a carrier density of several 1013 cm–2.},
doi = {10.1103/PhysRevLett.115.126802},
journal = {Physical Review Letters},
number = 12,
volume = 115,
place = {United States},
year = {2015},
month = {9}

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Cited by: 70 works
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