Origins of enhanced thermoelectric power factor in topologically insulating Bi0.64Sb1.36Te3 thin films
Abstract
In this paper, we report the enhanced thermoelectric power factor in topologically insulating thin films of Bi0.64Sb1.36Te3 with a thickness of 6–200 nm. Measurements of scanning tunneling spectroscopy and electronic transport show that the Fermi level lies close to the valence band edge, and that the topological surface state (TSS) is electron dominated. We find that the Seebeck coefficient of the 6 nm and 15 nm thick films is dominated by the valence band, while the TSS chiefly contributes to the electrical conductivity. In contrast, the electronic transport of the reference 200 nm thick film behaves similar to bulk thermoelectric materials with low carrier concentration, implying the effect of the TSS on the electronic transport is merely prominent in the thin region. The conductivity of the 6 nm and 15 nm thick film is obviously higher than that in the 200 nm thick film owing to the highly mobile TSS conduction channel. As a consequence of the enhanced electrical conductivity and the suppressed bipolar effect in transport properties for the 6 nm thick film, an impressive power factor of about 2.0 mW m–1 K–2 is achieved at room temperature for this film. Further investigations of the electronic transport properties ofmore »
- Authors:
-
[1];
[2];
[2];
- Univ. of Michigan, Ann Arbor, MI (United States); Wuhan Univ. of Technology, Wuhan (China)
- Univ. of Michigan, Ann Arbor, MI (United States)
- Wuhan Univ. of Technology, Wuhan (China)
- Publication Date:
- Research Org.:
- Energy Frontier Research Centers (EFRC), Washington, D.C. (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1370100
- Alternate Identifier(s):
- OSTI ID: 1236107
- Grant/Contract Number:
- SC0000957; PI0000012
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 108; Journal Issue: 4; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Liu, Wei, Chi, Hang, Walrath, J. C., Chang, A. S., Stoica, Vladimir A., Endicott, Lynn, Tang, Xinfeng, Goldman, R. S., and Uher, Ctirad. Origins of enhanced thermoelectric power factor in topologically insulating Bi0.64Sb1.36Te3 thin films. United States: N. p., 2016.
Web. doi:10.1063/1.4940923.
Liu, Wei, Chi, Hang, Walrath, J. C., Chang, A. S., Stoica, Vladimir A., Endicott, Lynn, Tang, Xinfeng, Goldman, R. S., & Uher, Ctirad. Origins of enhanced thermoelectric power factor in topologically insulating Bi0.64Sb1.36Te3 thin films. United States. https://doi.org/10.1063/1.4940923
Liu, Wei, Chi, Hang, Walrath, J. C., Chang, A. S., Stoica, Vladimir A., Endicott, Lynn, Tang, Xinfeng, Goldman, R. S., and Uher, Ctirad. Mon .
"Origins of enhanced thermoelectric power factor in topologically insulating Bi0.64Sb1.36Te3 thin films". United States. https://doi.org/10.1063/1.4940923. https://www.osti.gov/servlets/purl/1370100.
@article{osti_1370100,
title = {Origins of enhanced thermoelectric power factor in topologically insulating Bi0.64Sb1.36Te3 thin films},
author = {Liu, Wei and Chi, Hang and Walrath, J. C. and Chang, A. S. and Stoica, Vladimir A. and Endicott, Lynn and Tang, Xinfeng and Goldman, R. S. and Uher, Ctirad},
abstractNote = {In this paper, we report the enhanced thermoelectric power factor in topologically insulating thin films of Bi0.64Sb1.36Te3 with a thickness of 6–200 nm. Measurements of scanning tunneling spectroscopy and electronic transport show that the Fermi level lies close to the valence band edge, and that the topological surface state (TSS) is electron dominated. We find that the Seebeck coefficient of the 6 nm and 15 nm thick films is dominated by the valence band, while the TSS chiefly contributes to the electrical conductivity. In contrast, the electronic transport of the reference 200 nm thick film behaves similar to bulk thermoelectric materials with low carrier concentration, implying the effect of the TSS on the electronic transport is merely prominent in the thin region. The conductivity of the 6 nm and 15 nm thick film is obviously higher than that in the 200 nm thick film owing to the highly mobile TSS conduction channel. As a consequence of the enhanced electrical conductivity and the suppressed bipolar effect in transport properties for the 6 nm thick film, an impressive power factor of about 2.0 mW m–1 K–2 is achieved at room temperature for this film. Further investigations of the electronic transport properties of TSS and interactions between TSS and the bulk band might result in a further improved thermoelectric power factor in topologically insulating Bi0.64Sb1.36Te3 thin films.},
doi = {10.1063/1.4940923},
journal = {Applied Physics Letters},
number = 4,
volume = 108,
place = {United States},
year = {2016},
month = {1}
}
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Figures / Tables:
FIG. 1: Phase structure of MBE-grown Bi0.64Sb1.36Te3 films. (a) RHEED pattern of the 6 nm thick film; and (b) XRD pattern of the 15 nm thick film with the crystalline Te capping layer.
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Works referencing / citing this record:
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Figures / Tables found in this record:
Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.