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Title: Formation and coarsening of near-surface Ga nanoparticles on SiN x

Abstract

Here, we have investigated the formation and coarsening of near-surface Ga nanoparticles (NPs) in SiN x using Ga + focused-ion-beam-irradiation of SiN x, followed by rapid thermal annealing. For surfaces with minimal curvature, diffusive growth is apparent, leading to nearly close packed arrays with NP diameters as small as 3 nm and densities as high as ~4 × 10 12 cm -2. The diffusive flux increases with annealing temperature, leading to NP coarsening by Ostwald ripening. For surfaces with increased curvature, diffusion towards the valleys also increases during annealing, leading to Ga NP coalescence and a bi-modal distribution of NP sizes.

Authors:
 [1];  [1];  [1]; ORCiD logo [1]
  1. Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1370079
Alternate Identifier(s):
OSTI ID: 1226759
Grant/Contract Number:  
SC0000957
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 24; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE

Citation Formats

Canniff, J. C., Jeon, S., Huang, S., and Goldman, R. S. Formation and coarsening of near-surface Ga nanoparticles on SiNx. United States: N. p., 2015. Web. doi:10.1063/1.4922454.
Canniff, J. C., Jeon, S., Huang, S., & Goldman, R. S. Formation and coarsening of near-surface Ga nanoparticles on SiNx. United States. doi:10.1063/1.4922454.
Canniff, J. C., Jeon, S., Huang, S., and Goldman, R. S. Mon . "Formation and coarsening of near-surface Ga nanoparticles on SiNx". United States. doi:10.1063/1.4922454. https://www.osti.gov/servlets/purl/1370079.
@article{osti_1370079,
title = {Formation and coarsening of near-surface Ga nanoparticles on SiNx},
author = {Canniff, J. C. and Jeon, S. and Huang, S. and Goldman, R. S.},
abstractNote = {Here, we have investigated the formation and coarsening of near-surface Ga nanoparticles (NPs) in SiNx using Ga+ focused-ion-beam-irradiation of SiNx, followed by rapid thermal annealing. For surfaces with minimal curvature, diffusive growth is apparent, leading to nearly close packed arrays with NP diameters as small as 3 nm and densities as high as ~4 × 1012 cm-2. The diffusive flux increases with annealing temperature, leading to NP coarsening by Ostwald ripening. For surfaces with increased curvature, diffusion towards the valleys also increases during annealing, leading to Ga NP coalescence and a bi-modal distribution of NP sizes.},
doi = {10.1063/1.4922454},
journal = {Applied Physics Letters},
number = 24,
volume = 106,
place = {United States},
year = {2015},
month = {6}
}

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