Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon

Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

doi:10.1021/acsami.6b05749

Title: Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon

Journal Article · 24 July 2016 · ACS Applied Materials and Interfaces

DOI: https://doi.org/10.1021/acsami.6b05749 · OSTI ID:1370005

Parameshwaran, Vijay ^[1]; Xu, Xiaoqing ^[1]; Clemens, Bruce ^[1]

Stanford Univ., CA (United States)

The growth conditions of two types of indium-based III–V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, “ice cream cone” type structures are formed with a nanowire “cone” and an indium-based “ice cream” droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au–In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and offer insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Furthermore, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center on Nanostructuring for Efficient Energy Conversion (CNEEC)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0001060

OSTI ID:: 1370005

Journal Information:: ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 33 Vol. 8; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
nanowires
chemical vapor deposition
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electrochemistry
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Title: Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon

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References (55)

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