skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Stabilization of ferroelectric phase in tungsten capped Hf 0.8 Zr 0.2 O 2

Authors:
 [1];  [2]; ORCiD logo [1];  [1];  [1];  [3]
  1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA
  2. National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  3. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA, Energy Storage and Distributed Resources Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, California 94720, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1369483
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 2; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Karbasian, Golnaz, dos Reis, Roberto, Yadav, Ajay K., Tan, Ava J., Hu, Chenming, and Salahuddin, Sayeef. Stabilization of ferroelectric phase in tungsten capped Hf 0.8 Zr 0.2 O 2. United States: N. p., 2017. Web. doi:10.1063/1.4993739.
Karbasian, Golnaz, dos Reis, Roberto, Yadav, Ajay K., Tan, Ava J., Hu, Chenming, & Salahuddin, Sayeef. Stabilization of ferroelectric phase in tungsten capped Hf 0.8 Zr 0.2 O 2. United States. doi:10.1063/1.4993739.
Karbasian, Golnaz, dos Reis, Roberto, Yadav, Ajay K., Tan, Ava J., Hu, Chenming, and Salahuddin, Sayeef. Mon . "Stabilization of ferroelectric phase in tungsten capped Hf 0.8 Zr 0.2 O 2". United States. doi:10.1063/1.4993739.
@article{osti_1369483,
title = {Stabilization of ferroelectric phase in tungsten capped Hf 0.8 Zr 0.2 O 2},
author = {Karbasian, Golnaz and dos Reis, Roberto and Yadav, Ajay K. and Tan, Ava J. and Hu, Chenming and Salahuddin, Sayeef},
abstractNote = {},
doi = {10.1063/1.4993739},
journal = {Applied Physics Letters},
number = 2,
volume = 111,
place = {United States},
year = {2017},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4993739

Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Evolution of phases and ferroelectric properties of thin Hf 0.5 Zr 0.5 O 2 films according to the thickness and annealing temperature
journal, June 2013

  • Hyuk Park, Min; Joon Kim, Han; Jin Kim, Yu
  • Applied Physics Letters, Vol. 102, Issue 24
  • DOI: 10.1063/1.4811483

First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics
journal, April 2005

  • Umezawa, N.; Shiraishi, K.; Ohno, T.
  • Applied Physics Letters, Vol. 86, Issue 14
  • DOI: 10.1063/1.1899232

Ferroelectric phenomena in Si-doped HfO 2 thin films with TiN and Ir electrodes
journal, May 2014

  • Lomenzo, Patrick D.; Zhao, Peng; Takmeel, Qanit
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 3
  • DOI: 10.1116/1.4873323

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
journal, March 2012

  • Mueller, Stefan; Mueller, Johannes; Singh, Aarti
  • Advanced Functional Materials, Vol. 22, Issue 11
  • DOI: 10.1002/adfm.201103119

Stabilizing the ferroelectric phase in doped hafnium oxide
journal, August 2015

  • Hoffmann, M.; Schroeder, U.; Schenk, T.
  • Journal of Applied Physics, Vol. 118, Issue 7
  • DOI: 10.1063/1.4927805

Pathways towards ferroelectricity in hafnia
journal, August 2014


Ferroelectricity and Antiferroelectricity of Doped Thin HfO 2 -Based Films
journal, February 2015

  • Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon
  • Advanced Materials, Vol. 27, Issue 11
  • DOI: 10.1002/adma.201404531

On the structural origins of ferroelectricity in HfO 2 thin films
journal, April 2015

  • Sang, Xiahan; Grimley, Everett D.; Schenk, Tony
  • Applied Physics Letters, Vol. 106, Issue 16
  • DOI: 10.1063/1.4919135

Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO 2
journal, October 2016

  • Hoffmann, Michael; Pešić, Milan; Chatterjee, Korok
  • Advanced Functional Materials, Vol. 26, Issue 47
  • DOI: 10.1002/adfm.201602869

Ferroelectricity in hafnium oxide thin films
journal, September 2011

  • Böscke, T. S.; Müller, J.; Bräuhaus, D.
  • Applied Physics Letters, Vol. 99, Issue 10
  • DOI: 10.1063/1.3634052

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
journal, February 2008

  • Salahuddin, Sayeef; Datta, Supriyo
  • Nano Letters, Vol. 8, Issue 2
  • DOI: 10.1021/nl071804g

Crystallisation and Tetragonal-Monoclinic Transformation in ZrO<sub>2</sub> and HfO<sub>2</sub> Dielectric Thin Films
journal, December 2001


The origin of ferroelectricity in Hf 1−x Zr x O 2 : A computational investigation and a surface energy model
journal, April 2015

  • Materlik, R.; Künneth, C.; Kersch, A.
  • Journal of Applied Physics, Vol. 117, Issue 13
  • DOI: 10.1063/1.4916707

Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
journal, September 2011

  • Islam Khan, Asif; Bhowmik, Debanjan; Yu, Pu
  • Applied Physics Letters, Vol. 99, Issue 11
  • DOI: 10.1063/1.3634072

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film
journal, September 2016

  • Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep32931

Ferroelectricity of nondoped thin HfO 2 films in TiN/HfO 2 /TiN stacks
journal, June 2016

  • Nishimura, Tomonori; Xu, Lun; Shibayama, Shigehisa
  • Japanese Journal of Applied Physics, Vol. 55, Issue 8S2
  • DOI: 10.7567/JJAP.55.08PB01

Capacitance-voltage modeling of metal-ferroelectric-semiconductor capacitors based on epitaxial oxide heterostructures
journal, March 2011

  • Choi, Woong; Kim, Sunkook; Jin, Yong Wan
  • Applied Physics Letters, Vol. 98, Issue 10
  • DOI: 10.1063/1.3561751

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO 2 thin films
journal, April 2015

  • Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen
  • Journal of Applied Physics, Vol. 117, Issue 13
  • DOI: 10.1063/1.4916715

Enhancing ferroelectricity in dopant-free hafnium oxide
journal, January 2017

  • Pal, Ashish; Narasimhan, Vijay Kris; Weeks, Stephen
  • Applied Physics Letters, Vol. 110, Issue 2
  • DOI: 10.1063/1.4973928

Ferroelectric phase stabilization of HfO 2 by nitrogen doping
journal, August 2016

  • Xu, Lun; Nishimura, Tomonori; Shibayama, Shigehisa
  • Applied Physics Express, Vol. 9, Issue 9
  • DOI: 10.7567/APEX.9.091501

Ferroelectricity in Simple Binary ZrO 2 and HfO 2
journal, July 2012

  • Müller, Johannes; Böscke, Tim S.; Schröder, Uwe
  • Nano Letters, Vol. 12, Issue 8
  • DOI: 10.1021/nl302049k

Effect of forming gas annealing on the ferroelectric properties of Hf 0.5 Zr 0.5 O 2 thin films with and without Pt electrodes
journal, March 2013

  • Hyuk Park, Min; Joon Kim, Han; Jin Kim, Yu
  • Applied Physics Letters, Vol. 102, Issue 11
  • DOI: 10.1063/1.4798265

Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films
journal, April 2016

  • Katayama, Kiliha; Shimizu, Takao; Sakata, Osami
  • Journal of Applied Physics, Vol. 119, Issue 13
  • DOI: 10.1063/1.4945029

Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films
journal, February 2012

  • Müller, J.; Knebel, S.; Bräuhaus, D.
  • Applied Physics Letters, Vol. 100, Issue 8
  • DOI: 10.1063/1.3688915