Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Single-crystalline germanium nanomembrane photodetectors on foreign nanocavities

Abstract

Miniaturization of optoelectronic devices offers tremendous performance gain. As the volume of photoactive material decreases, optoelectronic performance improves, including the operation speed, the signal-to-noise ratio, and the internal quantum efficiency. Over the past decades, researchers have managed to reduce the volume of photoactive materials in solar cells and photodetectors by orders of magnitude. However, two issues arise when one continues to thin down the photoactive layers to the nanometer scale (for example, <50 nm). First, light-matter interaction becomes weak, resulting in incomplete photon absorption and low quantum efficiency. Second, it is difficult to obtain ultrathin materials with single-crystalline quality. We introduce a method to overcome these two challenges simultaneously. It uses conventional bulk semiconductor wafers, such as Si, Ge, and GaAs, to realize single-crystalline films on foreign substrates that are designed for enhanced light-matter interaction. We use a high-yield and high-throughput method to demonstrate nanometer-thin photodetectors with significantly enhanced light absorption based on nanocavity interference mechanism. As a result, these single-crystalline nanomembrane photodetectors also exhibit unique optoelectronic properties, such as the strong field effect and spectral selectivity.

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [3];  [1];  [4];  [2]
+ Show Author Affiliations
  1. Univ. of Wisconsin, Madison, WI (United States)
  2. Univ. at Buffalo, State Univ. of New York, Buffalo, NY (United States)
  3. Yale Univ., New Haven, CT (United States)
  4. (Jack) [Univ. of Wisconsin, Madison, WI (United States)
Publication Date:
Research Org.:
Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1369463
Grant/Contract Number:  
NA0002915
Resource Type:
Accepted Manuscript
Journal Name:
Science Advances
Additional Journal Information:
Journal Volume: 3; Journal Issue: 7; Journal ID: ISSN 2375-2548
Publisher:
AAAS
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; photodetector; semiconductor nanomembrane

Citation Formats

Xia, Zhenyang, Song, Haomin, Kim, Munho, Zhou, Ming, Chang, Tzu -Hsuan, Liu, Dong, Yin, Xin, Xiong, Kanglin, Mi, Hongyi, Wang, Xudong, Xia, Fengnian, Yu, Zongfu, Ma, Zhenqiang, and Gan, Qiaoqiang. Single-crystalline germanium nanomembrane photodetectors on foreign nanocavities. United States: N. p., 2017. Web. doi:10.1126/sciadv.1602783.
Copy to clipboard
Xia, Zhenyang, Song, Haomin, Kim, Munho, Zhou, Ming, Chang, Tzu -Hsuan, Liu, Dong, Yin, Xin, Xiong, Kanglin, Mi, Hongyi, Wang, Xudong, Xia, Fengnian, Yu, Zongfu, Ma, Zhenqiang, & Gan, Qiaoqiang. Single-crystalline germanium nanomembrane photodetectors on foreign nanocavities. United States. https://doi.org/10.1126/sciadv.1602783
Copy to clipboard
Xia, Zhenyang, Song, Haomin, Kim, Munho, Zhou, Ming, Chang, Tzu -Hsuan, Liu, Dong, Yin, Xin, Xiong, Kanglin, Mi, Hongyi, Wang, Xudong, Xia, Fengnian, Yu, Zongfu, Ma, Zhenqiang, and Gan, Qiaoqiang. Fri . "Single-crystalline germanium nanomembrane photodetectors on foreign nanocavities". United States. https://doi.org/10.1126/sciadv.1602783. https://www.osti.gov/servlets/purl/1369463.
Copy to clipboard
@article{osti_1369463,
title = {Single-crystalline germanium nanomembrane photodetectors on foreign nanocavities},
author = {Xia, Zhenyang and Song, Haomin and Kim, Munho and Zhou, Ming and Chang, Tzu -Hsuan and Liu, Dong and Yin, Xin and Xiong, Kanglin and Mi, Hongyi and Wang, Xudong and Xia, Fengnian and Yu, Zongfu and Ma, Zhenqiang and Gan, Qiaoqiang},
abstractNote = {Miniaturization of optoelectronic devices offers tremendous performance gain. As the volume of photoactive material decreases, optoelectronic performance improves, including the operation speed, the signal-to-noise ratio, and the internal quantum efficiency. Over the past decades, researchers have managed to reduce the volume of photoactive materials in solar cells and photodetectors by orders of magnitude. However, two issues arise when one continues to thin down the photoactive layers to the nanometer scale (for example, <50 nm). First, light-matter interaction becomes weak, resulting in incomplete photon absorption and low quantum efficiency. Second, it is difficult to obtain ultrathin materials with single-crystalline quality. We introduce a method to overcome these two challenges simultaneously. It uses conventional bulk semiconductor wafers, such as Si, Ge, and GaAs, to realize single-crystalline films on foreign substrates that are designed for enhanced light-matter interaction. We use a high-yield and high-throughput method to demonstrate nanometer-thin photodetectors with significantly enhanced light absorption based on nanocavity interference mechanism. As a result, these single-crystalline nanomembrane photodetectors also exhibit unique optoelectronic properties, such as the strong field effect and spectral selectivity.},
doi = {10.1126/sciadv.1602783},
journal = {Science Advances},
number = 7,
volume = 3,
place = {United States},
year = {Fri Jul 07 00:00:00 EDT 2017},
month = {Fri Jul 07 00:00:00 EDT 2017}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1126/sciadv.1602783
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 64 works
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects
journal, March 2010

  • Assefa, Solomon; Xia, Fengnian; Vlasov, Yurii A.
  • Nature, Vol. 464, Issue 7285
  • DOI: 10.1038/nature08813

Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects
journal, March 2010

  • Assefa, Solomon; Xia, Fengnian; Vlasov, Yurii A.
  • Nature, Vol. 464, Issue 7285
  • DOI: 10.1038/nature08813

Advances in the field of poly-Ge on Si near infrared photodetectors
journal, January 2000

Ultrathin Resonant-Cavity-Enhanced Solar Cells with Amorphous Germanium Absorbers
journal, November 2014

  • Steenhoff, Volker; Theuring, Martin; Vehse, Martin
  • Advanced Optical Materials, Vol. 3, Issue 2
  • DOI: 10.1002/adom.201400386

Full-range electrical characteristics of WS 2 transistors
journal, March 2015

  • Kumar, Jatinder; Kuroda, Marcelo A.; Bellus, Matthew Z.
  • Applied Physics Letters, Vol. 106, Issue 12
  • DOI: 10.1063/1.4916403

Nanostructured materials for photon detection
journal, May 2010

  • Konstantatos, Gerasimos; Sargent, Edward H.
  • Nature Nanotechnology, Vol. 5, Issue 6
  • DOI: 10.1038/nnano.2010.78

Synthesis, assembly and applications of semiconductor nanomembranes
journal, September 2011

  • Rogers, J. A.; Lagally, M. G.; Nuzzo, R. G.
  • Nature, Vol. 477, Issue 7362, p. 45-53
  • DOI: 10.1038/nature10381

Synthesis, assembly and applications of semiconductor nanomembranes
journal, September 2011

  • Rogers, J. A.; Lagally, M. G.; Nuzzo, R. G.
  • Nature, Vol. 477, Issue 7362, p. 45-53
  • DOI: 10.1038/nature10381

Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
journal, July 2014

  • Xia, Fengnian; Wang, Han; Jia, Yichen
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5458

Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors
journal, November 2014

  • Hudait, Mantu K.; Clavel, Michael; Goley, Patrick
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep06964

Studies on optical and dielectric properties of Al2O3 thin films prepared by electron beam evaporation and spray pyrolysis method
journal, February 2004

  • Shamala, K. S.; Murthy, L. C. S.; Narasimha Rao, K.
  • Materials Science and Engineering: B, Vol. 106, Issue 3
  • DOI: 10.1016/j.mseb.2003.09.036

Assembly of micro/nanomaterials into complex, three-dimensional architectures by compressive buckling
journal, January 2015

Ultrathin CdSe in Plasmonic Nanogaps for Enhanced Photocatalytic Water Splitting
journal, March 2015

  • Sigle, Daniel O.; Zhang, Liwu; Ithurria, Sandrine
  • The Journal of Physical Chemistry Letters, Vol. 6, Issue 7
  • DOI: 10.1021/acs.jpclett.5b00279

Hybrid graphene–quantum dot phototransistors with ultrahigh gain
journal, May 2012

  • Konstantatos, Gerasimos; Badioli, Michela; Gaudreau, Louis
  • Nature Nanotechnology, Vol. 7, Issue 6
  • DOI: 10.1038/nnano.2012.60

Electronic transport in nanometre-scale silicon-on-insulator membranes
journal, February 2006

  • Zhang, Pengpeng; Tevaarwerk, Emma; Park, Byoung-Nam
  • Nature, Vol. 439, Issue 7077, p. 703-706
  • DOI: 10.1038/nature04501

Nanometre optical coatings based on strong interference effects in highly absorbing media
journal, October 2012

  • Kats, Mikhail A.; Blanchard, Romain; Genevet, Patrice
  • Nature Materials, Vol. 12, Issue 1, p. 20-24
  • DOI: 10.1038/nmat3443

Superabsorbing, Artificial Metal Films Constructed from Semiconductor Nanoantennas
journal, May 2016

ZnO Nanowire UV Photodetectors with High Internal Gain
journal, April 2007

  • Soci, C.; Zhang, A.; Xiang, B.
  • Nano Letters, Vol. 7, Issue 4
  • DOI: 10.1021/nl070111x

Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
journal, March 2015

Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors
journal, November 2014

  • Hudait, Mantu K.; Clavel, Michael; Goley, Patrick
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep06964

Ge-Photodetectors for Si-Based Optoelectronic Integration
journal, January 2011

Ultrasensitive photodetectors based on monolayer MoS2
journal, June 2013

  • Lopez-Sanchez, Oriol; Lembke, Dominik; Kayci, Metin
  • Nature Nanotechnology, Vol. 8, Issue 7
  • DOI: 10.1038/nnano.2013.100

Black Phosphorus Mid-Infrared Photodetectors with High Gain
journal, June 2016

Nanocavity Enhancement for Ultra-Thin Film Optical Absorber
journal, February 2014

Germanium on Insulator (GOI) Structure Using Hetero-Epitaxial Lateral Overgrowth on Silicon
journal, April 2012

  • Nam, J. H.; Fuse, T.; Nishi, Y.
  • ECS Transactions, Vol. 45, Issue 4
  • DOI: 10.1149/1.3700469

Ultrathin metal-semiconductor-metal resonator for angle invariant visible band transmission filters
journal, June 2014

  • Lee, Kyu-Tae; Seo, Sungyong; Yong Lee, Jae
  • Applied Physics Letters, Vol. 104, Issue 23
  • DOI: 10.1063/1.4883494

Electrical breakdown of multilayer MoS 2 field-effect transistors with thickness-dependent mobility
journal, January 2014

  • Yang, Rui; Wang, Zenghui; Feng, Philip X. -L.
  • Nanoscale, Vol. 6, Issue 21
  • DOI: 10.1039/c4nr03472d

Raman scattering in pure and hydrogenated amorphous germanium and silicon
journal, February 1979

Large Area Growth and Electrical Properties of p-Type WSe 2 Atomic Layers
journal, December 2014

  • Zhou, Hailong; Wang, Chen; Shaw, Jonathan C.
  • Nano Letters, Vol. 15, Issue 1
  • DOI: 10.1021/nl504256y

Low-temperature germanium thin films on silicon
journal, January 2011

  • Sorianello, Vito; Colace, Lorenzo; Armani, Nicola
  • Optical Materials Express, Vol. 1, Issue 5
  • DOI: 10.1364/OME.1.000856

Transfer printing by kinetic control of adhesion to an elastomeric stamp
journal, December 2005

  • Meitl, Matthew A.; Zhu, Zheng-Tao; Kumar, Vipan
  • Nature Materials, Vol. 5, Issue 1, p. 33-38
  • DOI: 10.1038/nmat1532

Mechanisms of photoconductivity in atomically thin MoS2
text, January 2014

Nanocavity absorption enhancement for two-dimensional material monolayer systems
journal, January 2015

  • Song, Haomin; Jiang, Suhua; Ji, Dengxin
  • Optics Express, Vol. 23, Issue 6
  • DOI: 10.1364/oe.23.007120

Raman scattering in pure and hydrogenated amorphous germanium and silicon
journal, February 1979

Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction
journal, June 2015

  • Yuan, Hongtao; Liu, Xiaoge; Afshinmanesh, Farzaneh
  • Nature Nanotechnology, Vol. 10, Issue 8
  • DOI: 10.1038/nnano.2015.112

Optical absorbers based on strong interference in ultra-thin films (Laser Photonics Rev. 10(5)/2016)
journal, September 2016

Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light
journal, January 1999

  • Takanashi, Y.; Takahata, K.; Muramoto, Y.
  • IEEE Transactions on Electron Devices, Vol. 46, Issue 12
  • DOI: 10.1109/16.808049

Strong Resonance Effect in a Lossy Medium-Based Optical Cavity for Angle Robust Spectrum Filters
journal, July 2014

  • Lee, Kyu-Tae; Seo, Sungyong; Lee, Jae Yong
  • Advanced Materials, Vol. 26, Issue 36
  • DOI: 10.1002/adma.201402117

Large Area Growth and Electrical Properties of p-Type WSe 2 Atomic Layers
journal, December 2014

  • Zhou, Hailong; Wang, Chen; Shaw, Jonathan C.
  • Nano Letters, Vol. 15, Issue 1
  • DOI: 10.1021/nl504256y

Gate Controlled Photocurrent Generation Mechanisms in High-Gain In 2 Se 3 Phototransistors
journal, November 2015

Gold–palladium bimetallic nanoalloy decorated ultrathin 2D TiO 2 nanosheets as efficient photocatalysts with high hydrogen evolution activity
journal, January 2015

  • Xin, Yongji; Wu, Linen; Ge, Lei
  • Journal of Materials Chemistry A, Vol. 3, Issue 16
  • DOI: 10.1039/C5TA00759C

Strained germanium thin film membrane on silicon substrate for optoelectronics
journal, January 2011

  • Nam, Donguk; Sukhdeo, Devanand; Roy, Arunanshu
  • Optics Express, Vol. 19, Issue 27
  • DOI: 10.1364/oe.19.025866

High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding
journal, January 2008

Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator
journal, June 2009

  • Kazazis, D.; Jannaty, P.; Zaslavsky, A.
  • Applied Physics Letters, Vol. 94, Issue 26
  • DOI: 10.1063/1.3168646

Transport Properties of Monolayer MoS 2 Grown by Chemical Vapor Deposition
journal, March 2014

  • Schmidt, Hennrik; Wang, Shunfeng; Chu, Leiqiang
  • Nano Letters, Vol. 14, Issue 4
  • DOI: 10.1021/nl4046922

Recent progress in lasers on silicon
journal, July 2010

Strong light–matter coupling in two-dimensional atomic crystals
journal, December 2014

Strong Resonance Effect in a Lossy Medium-Based Optical Cavity for Angle Robust Spectrum Filters
journal, July 2014

  • Lee, Kyu-Tae; Seo, Sungyong; Lee, Jae Yong
  • Advanced Materials, Vol. 26, Issue 36
  • DOI: 10.1002/adma.201402117

Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
journal, July 2014

  • Xia, Fengnian; Wang, Han; Jia, Yichen
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5458

Ultrasensitive photodetectors based on monolayer MoS2
journal, June 2013

  • Lopez-Sanchez, Oriol; Lembke, Dominik; Kayci, Metin
  • Nature Nanotechnology, Vol. 8, Issue 7
  • DOI: 10.1038/nnano.2013.100

MoS 2 monolayers on nanocavities: enhancement in light–matter interaction
journal, April 2016

Mechanisms of Photoconductivity in Atomically Thin MoS 2
journal, October 2014

  • Furchi, Marco M.; Polyushkin, Dmitry K.; Pospischil, Andreas
  • Nano Letters, Vol. 14, Issue 11
  • DOI: 10.1021/nl502339q

Nanostructured materials for photon detection
journal, May 2010

  • Konstantatos, Gerasimos; Sargent, Edward H.
  • Nature Nanotechnology, Vol. 5, Issue 6
  • DOI: 10.1038/nnano.2010.78

Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction
journal, June 2015

  • Yuan, Hongtao; Liu, Xiaoge; Afshinmanesh, Farzaneh
  • Nature Nanotechnology, Vol. 10, Issue 8
  • DOI: 10.1038/nnano.2015.112

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
journal, November 2010

  • Ko, Hyunhyub; Takei, Kuniharu; Kapadia, Rehan
  • Nature, Vol. 468, Issue 7321
  • DOI: 10.1038/nature09541

Field-Effect Transistors Based on Few-Layered α-MoTe 2
journal, May 2014

  • Pradhan, Nihar R.; Rhodes, Daniel; Feng, Simin
  • ACS Nano, Vol. 8, Issue 6
  • DOI: 10.1021/nn501013c

Superabsorbing, Artificial Metal Films Constructed from Semiconductor Nanoantennas
journal, May 2016

Germanium Gate PhotoMOSFET Integrated to Silicon Photonics
journal, July 2014

  • Going, Ryan W.; Loo, Jodi
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 20, Issue 4
  • DOI: 10.1109/JSTQE.2013.2294470
    Sort by:
    [ × clear filter / sort ]

    Works referencing / citing this record:

    Semiconductor Thin Film Based Metasurfaces and Metamaterials for Photovoltaic and Photoelectrochemical Water Splitting Applications
    journal, April 2019

    • Ghobadi, Amir; Ulusoy Ghobadi, Turkan Gamze; Karadas, Ferdi
    • Advanced Optical Materials, Vol. 7, Issue 14
    • DOI: 10.1002/adom.201900028

    Planar Metasurfaces Enable High-Efficiency Colored Perovskite Solar Cells
    journal, August 2018

    Low dimensional freestanding semiconductors for flexible optoelectronics: materials, synthesis, process, and applications
    journal, January 2020

    High-specific-detectivity, low-dark-current Ge nanowire metal–semiconductor–metal photodetectors fabricated by Ge condensation method
    journal, January 2020

    • Yu, Chunyu; Huang, Zhiwei; Lin, Guangyang
    • Journal of Physics D: Applied Physics, Vol. 53, Issue 12
    • DOI: 10.1088/1361-6463/ab6573

    2D semiconductors towards high-performance ultraviolet photodetection
    journal, May 2019

    Ultrathin‐Film Titania Photocatalyst on Nanocavity for CO 2 Reduction with Boosted Catalytic Efficiencies
    journal, September 2018

    Enhancement of two-photon absorption photoresponse based on whispering gallery modes
    journal, January 2018

    • Chen, Zhiyang; Lou, Guanlin; Zhu, Hai
    • Nanoscale, Vol. 10, Issue 29
    • DOI: 10.1039/c8nr02806k

    Broadband 400-2400 nm Ge heterostructure nanowire photodetector fabricated by three-dimensional Ge condensation technique
    journal, January 2019

    • Lin, Guangyang; Liang, Dongxue; Yu, Chunyu
    • Optics Express, Vol. 27, Issue 22
    • DOI: 10.1364/oe.27.032801

    Ultrafast All-Optical Switching of Germanium-Based Flexible Metaphotonic Devices
    journal, January 2018

    • Lim, Wen Xiang; Manjappa, Manukumara; Srivastava, Yogesh Kumar
    • Advanced Materials, Vol. 30, Issue 9
    • DOI: 10.1002/adma.201705331

    Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer
    journal, April 2018

    • Lin, Dong; Pi, Shubin; Yang, Jianwen
    • Semiconductor Science and Technology, Vol. 33, Issue 6
    • DOI: 10.1088/1361-6641/aabd11

    Wafer-recyclable, environment-friendly transfer printing for large-scale thin-film nanoelectronics
    journal, July 2018

    • Wie, Dae Seung; Zhang, Yue; Kim, Min Ku
    • Proceedings of the National Academy of Sciences, Vol. 115, Issue 31
    • DOI: 10.1073/pnas.1806640115

    Planar Metasurfaces Enable High-Efficiency Colored Perovskite Solar Cells
    journal, August 2018

    Nanoscale groove textured β-Ga 2 O 3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity
    journal, November 2018

    • Kim, Munho; Huang, Hsien-Chih; Kim, Jeong Dong
    • Applied Physics Letters, Vol. 113, Issue 22
    • DOI: 10.1063/1.5053219

    All-Optical-Input Transistors: Light-Controlled Enhancement of Plasmon-Induced Photocurrent
    journal, August 2018

    • Gao, Xu Dong; Fei, Guang Tao; Zhang, Yao
    • Advanced Functional Materials, Vol. 28, Issue 40
    • DOI: 10.1002/adfm.201802288
      Sort by:
      [ × clear filter / sort ]

      Similar Records in DOE PAGES and OSTI.GOV collections: