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Title: Three-dimensional phonon population anisotropy in silicon nanomembranes

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Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
Grant/Contract Number:  
FG02-04ER46147; AC02-06CH11357
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 96 Journal Issue: 1; Journal ID: ISSN 2469-9950
American Physical Society
Country of Publication:
United States

Citation Formats

McElhinny, Kyle M., Gopalakrishnan, Gokul, Holt, Martin V., Czaplewski, David A., and Evans, Paul G. Three-dimensional phonon population anisotropy in silicon nanomembranes. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.014301.
McElhinny, Kyle M., Gopalakrishnan, Gokul, Holt, Martin V., Czaplewski, David A., & Evans, Paul G. Three-dimensional phonon population anisotropy in silicon nanomembranes. United States. doi:10.1103/PhysRevB.96.014301.
McElhinny, Kyle M., Gopalakrishnan, Gokul, Holt, Martin V., Czaplewski, David A., and Evans, Paul G. Mon . "Three-dimensional phonon population anisotropy in silicon nanomembranes". United States. doi:10.1103/PhysRevB.96.014301.
title = {Three-dimensional phonon population anisotropy in silicon nanomembranes},
author = {McElhinny, Kyle M. and Gopalakrishnan, Gokul and Holt, Martin V. and Czaplewski, David A. and Evans, Paul G.},
abstractNote = {},
doi = {10.1103/PhysRevB.96.014301},
journal = {Physical Review B},
number = 1,
volume = 96,
place = {United States},
year = {2017},
month = {7}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.96.014301

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