Material and device properties of superacid-treated monolayer molybdenum disulfide

Alharbi, Abdullah; Zahl, Percy; Shahrjerdi, Davood

doi:10.1063/1.4974046

Title: Material and device properties of superacid-treated monolayer molybdenum disulfide

Abstract

Here, we study the effects of chemical treatment with bis(trifluoromethane) sulfonimide superacid on material and device properties of monolayer molybdenum disulfide grown by chemical vapor deposition. Our spatially resolved photoluminescence (PL) measurements and device studies reveal two key findings due to the chemical treatment: (1) noticeable transformation of trions to neutral excitons, and (2) over 7-fold reduction in the density of mid-gap trap states. Specifically, a combination of scanning Auger microscopy and PL mapping reveals that the superacid treatment is effective in passivating the sulfur-deficient regions.

Authors:

Alharbi, Abdullah ^[1]; Zahl, Percy ^[2]; Shahrjerdi, Davood ^[1]

New York Univ., Brooklyn, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)

Publication Date:: 2017-01-16

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1368668

Alternate Identifier(s):: OSTI ID: 1361739

Report Number(s):: BNL-113995-2017-JA
Journal ID: ISSN 0003-6951; APPLAB; R&D Project: 16080; KC0403020

Grant/Contract Number:: SC00112704; SC0012704

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 110; Journal Issue: 3; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Alharbi, Abdullah, Zahl, Percy, and Shahrjerdi, Davood. Material and device properties of superacid-treated monolayer molybdenum disulfide.  United States: N. p., 2017. 
Web.  doi:10.1063/1.4974046.

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                    Alharbi, Abdullah, Zahl, Percy, & Shahrjerdi, Davood. Material and device properties of superacid-treated monolayer molybdenum disulfide.  United States.  https://doi.org/10.1063/1.4974046

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                    Alharbi, Abdullah, Zahl, Percy, and Shahrjerdi, Davood. Mon .  
"Material and device properties of superacid-treated monolayer molybdenum disulfide".  United States.  https://doi.org/10.1063/1.4974046.  https://www.osti.gov/servlets/purl/1368668.

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@article{osti_1368668,

  title        = {Material and device properties of superacid-treated monolayer molybdenum disulfide},

  author       = {Alharbi, Abdullah and Zahl, Percy and Shahrjerdi, Davood},

  abstractNote = {Here, we study the effects of chemical treatment with bis(trifluoromethane) sulfonimide superacid on material and device properties of monolayer molybdenum disulfide grown by chemical vapor deposition. Our spatially resolved photoluminescence (PL) measurements and device studies reveal two key findings due to the chemical treatment: (1) noticeable transformation of trions to neutral excitons, and (2) over 7-fold reduction in the density of mid-gap trap states. Specifically, a combination of scanning Auger microscopy and PL mapping reveals that the superacid treatment is effective in passivating the sulfur-deficient regions.},

  doi          = {10.1063/1.4974046},

  journal      = {Applied Physics Letters},

  number       = 3,

  volume       = 110,

  place        = {United States},

  year         = {2017},

  month        = {1}

}

Copy to clipboard

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Works referenced in this record:

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Works referencing / citing this record:

Effect of Dielectric Environment on Excitonic Dynamics in Monolayer WS ₂
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Fu, Yang; He, Dawei; He, Jiaqi
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Rao, Rahul; Carozo, Victor; Wang, Yuanxi
2D Materials, Vol. 6, Issue 4
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Title: Material and device properties of superacid-treated monolayer molybdenum disulfide

Abstract

Citation Formats

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide journal, May 2013

Defect passivation induced strong photoluminescence enhancement of rhombic monolayer MoS 2 journal, January 2016

Strong Photoluminescence Enhancement of MoS 2 through Defect Engineering and Oxygen Bonding journal, May 2014

Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfide journal, August 2015

Transforming bilayer MoS2 into single-layer with strong photoluminescence using UV-ozone oxidation journal, October 2015

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons journal, September 2013

Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers journal, June 2013

Enhancing photoluminescence of trion in single-layer MoS2 using p-type aromatic molecules journal, August 2015

High Luminescence Efficiency in MoS 2 Grown by Chemical Vapor Deposition journal, June 2016

Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides journal, March 2016

The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2 journal, April 2014

Hafnium oxide gate dielectrics on sulfur-passivated germanium journal, September 2006

Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition journal, November 2014

Field-Effect Transistors Built from All Two-Dimensional Material Components journal, May 2014

The Effect of HCl and Cl[sub 2] on the Thermal Oxidation of Silicon journal, January 1972

Plasma functionalization for cyclic transition between neutral and charged excitons in monolayer MoS2 journal, February 2016

Tunable Photoluminescence of Monolayer MoS 2 via Chemical Doping journal, November 2013

Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition journal, November 2016

Single-Layer MoS2 Phototransistors journal, December 2011

Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric journal, August 2007

Tightly bound trions in monolayer MoS2 journal, December 2012

Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides journal, January 2007

Ultrasensitive photodetectors based on monolayer MoS2 journal, June 2013

Near-unity photoluminescence quantum yield in MoS2 journal, November 2015

Defect-Tolerant Monolayer Transition Metal Dichalcogenides journal, March 2016

Chemistry of Si‐SiO 2 interface trap annealing journal, June 1988

Sulfur vacancies in monolayer MoS 2 and its electrical contacts journal, October 2013

Intrinsic Structural Defects in Monolayer Molybdenum Disulfide journal, May 2013

Electronic and optical properties of MoS2 (0001) thin films: Feasibility for solar cells journal, March 2013

Single-layer MoS2 transistors journal, January 2011

MoS 2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap journal, June 2012

Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors journal, October 2011

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition journal, January 2014

Effect of Dielectric Environment on Excitonic Dynamics in Monolayer WS 2 journal, September 2019

Light Emission Properties of 2D Transition Metal Dichalcogenides: Fundamentals and Applications journal, August 2018

Near-field exciton imaging of chemically treated MoS 2 monolayers journal, January 2018

Density of defect states retrieved from the hysteretic gate transfer characteristics of monolayer MoS 2 field effect transistors journal, January 2019

Dynamics of cleaning, passivating and doping monolayer MoS 2 by controlled laser irradiation journal, August 2019

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
journal, May 2013

Defect passivation induced strong photoluminescence enhancement of rhombic monolayer MoS ₂
journal, January 2016

Strong Photoluminescence Enhancement of MoS ₂ through Defect Engineering and Oxygen Bonding
journal, May 2014

Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfide
journal, August 2015

Transforming bilayer MoS2 into single-layer with strong photoluminescence using UV-ozone oxidation
journal, October 2015

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
journal, September 2013

Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
journal, June 2013

Enhancing photoluminescence of trion in single-layer MoS2 using p-type aromatic molecules
journal, August 2015

High Luminescence Efficiency in MoS ₂ Grown by Chemical Vapor Deposition
journal, June 2016

Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides
journal, March 2016

The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2
journal, April 2014

Hafnium oxide gate dielectrics on sulfur-passivated germanium
journal, September 2006

Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition
journal, November 2014

Field-Effect Transistors Built from All Two-Dimensional Material Components
journal, May 2014

The Effect of HCl and Cl[sub 2] on the Thermal Oxidation of Silicon
journal, January 1972

Plasma functionalization for cyclic transition between neutral and charged excitons in monolayer MoS2
journal, February 2016

Tunable Photoluminescence of Monolayer MoS ₂ via Chemical Doping
journal, November 2013

Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition
journal, November 2016

Single-Layer MoS₂ Phototransistors
journal, December 2011

Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric
journal, August 2007

Tightly bound trions in monolayer MoS2
journal, December 2012

Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides
journal, January 2007

Ultrasensitive photodetectors based on monolayer MoS2
journal, June 2013

Near-unity photoluminescence quantum yield in MoS2
journal, November 2015

Defect-Tolerant Monolayer Transition Metal Dichalcogenides
journal, March 2016

Chemistry of Si‐SiO ₂ interface trap annealing
journal, June 1988

Sulfur vacancies in monolayer MoS ₂ and its electrical contacts
journal, October 2013

Intrinsic Structural Defects in Monolayer Molybdenum Disulfide
journal, May 2013

Electronic and optical properties of MoS2 (0001) thin films: Feasibility for solar cells
journal, March 2013

Single-layer MoS₂ transistors
journal, January 2011

MoS ₂ Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
journal, June 2012

Nature of Electronic States in Atomically Thin MoS₂ Field-Effect Transistors
journal, October 2011

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
journal, January 2014

Effect of Dielectric Environment on Excitonic Dynamics in Monolayer WS ₂
journal, September 2019

Light Emission Properties of 2D Transition Metal Dichalcogenides: Fundamentals and Applications
journal, August 2018

Near-field exciton imaging of chemically treated MoS ₂ monolayers
journal, January 2018

Density of defect states retrieved from the hysteretic gate transfer characteristics of monolayer MoS ₂ field effect transistors
journal, January 2019

Dynamics of cleaning, passivating and doping monolayer MoS ₂ by controlled laser irradiation
journal, August 2019